Memory devices, systems including memory devices, and methods of operating memory devices and systems are provided, in which at least a subset of a non-volatile memory array is configured to behave as a volatile memory by erasing or degrading data in the event of a changed power condition such as a power-loss event, a power-off event, or a power-on event. In one embodiment of the present technology, a memory device is provided, comprising a non-volatile memory array, and circuitry configured to store one or more addresses of the non-volatile memory array, to detect a changed power condition of the memory device, and to erase or degrade data at the one or more addresses in response to detecting the changed power condition.

A memory system may improve the endurance and performance of a plurality of memories included in the memory system mounted on a server system or a data processing system. For example, the memory system may throttle energy of a first memory using a second memory having a different characteristic from the first memory, control accesses to a memory region according to a refresh cycle, and control accesses to memories having different temperatures according to a priority of a request for each of the memories.

A storage device includes a secondary power source, a charging circuit, a protection circuit and a main system. The secondary power source includes a plurality of capacitors, is charged based on a charging voltage, and generates an internal power supply voltage. The charging circuit generates the charging voltage based on an external power supply voltage. The protection circuit monitors whether at least one of the plurality of capacitors is defective, and blocks at least one defective capacitor. The main system operates based on the external or internal power supply voltage. The protection circuit includes a plurality of resistors, a plurality of transistors and a control circuit. The control circuit monitors whether the at least one of the plurality of capacitors is defective using the plurality of resistors and a plurality of currents associated with the plurality of capacitors, and blocks the at least one defective capacitor using the plurality of transistors and a plurality of control signals.

According to one embodiment, the memory system includes a nonvolatile semiconductor memory, a data buffer, a volatile memory for storing a management table uniquely associates the user data with an address of the physical storage region of nonvolatile semiconductor memory, a controller that carries out a force quit process for writing the user data stored in a data buffer, the management table stored in volatile memory into the nonvolatile semiconductor memory, and a storage battery. The controller starts the force quit process prior to the power supply of the internal power supply regulator is switched from an external power supply to the storage battery.

Memory devices, systems including memory devices, and methods of operating memory devices and systems are provided, in which at least a subset of a non-volatile memory array is configured to behave as a volatile memory by erasing or degrading data in the event of a changed power condition such as a power-loss event, a power-off event, or a power-on event. In one embodiment of the present technology, a memory device is provided, comprising a non-volatile memory array, and circuitry configured to store one or more addresses of the non-volatile memory array, to detect a changed power condition of the memory device, and to erase or degrade data at the one or more addresses in response to detecting the changed power condition.

According to one embodiment, a memory system includes a controller controls writing data to a non-volatile memory and a volatile memory, a power supply circuit generates voltages with a first voltage externally supplied and supplies the voltages to the non-volatile memory, volatile memory, and controller, and a backup power supply circuit. The power supply circuit, when the first voltage drops irrespective of a shutdown command, generates the voltages with an output voltage of the backup power supply circuit. The controller changes a size of data storable in the volatile memory in accordance with a supply capability fed from the backup power supply circuit.

A voltage regulator receives an input voltage and produces a regulated output voltage. A first feedback network compares a feedback signal to a reference signal to assert/de-assert a first pulsed control signal when the reference signal is higher/lower than the feedback signal. A second feedback network compares the output voltage to a threshold signal to assert/de-assert a second control signal when the threshold signal is higher/lower than the output voltage. A charge pump is enabled if the second control signal is de-asserted and is clocked by the first pulsed control signal to produce a supply voltage higher than the input voltage. A first pass element is enabled when the second control signal is asserted and is selectively activated when the first pulsed control signal is asserted. A second pass element is selectively activated when the second control signal is de-asserted.

A power management circuit receives power from a host and a backup power supply in parallel and uses power from at least one of the host and the backup power supply to operate voltage regulators for a memory system. An enable signal is generated based on whether or not the voltage regulators are powered. The enable signal can be used to keep the backup power supply on while the memory system is in operation. In response to absence of power from the host, the circuit generates an interrupt signal causing the memory system to shut down safely without data loss.

The invention relates to a method, and an apparatus for accessing to data in response to a power-supply event. The method, performed by a flash controller, includes steps for: reading a plurality of physical pages of data in a current block from a flash module during a sudden power off recovery procedure; determining whether a power-supply event has occurred according to an error correction result corresponding to read physical pages; reconstructing a first flash-to-host mapping (F2H) table to include physical-to-logical mapping (P2L) information from the 0.sup.th page to a page before a last valid page in the current block when the power-supply event has occurred; and programming the reconstructed first F2H table into a location of the flash module.

A method includes writing received data sequentially to a particular location of a cyclic buffer of a memory device according to a first set of threshold voltage distributions. The method further includes performing a touch up operation on the particular location by adjusting the first set of threshold voltage distributions of the data to a second set of threshold voltage distributions in response to a determination that a trigger event has occurred. The second set of threshold voltage distributions can have a larger read window between adjacent threshold voltage distributions of the second set than that of the first set of threshold voltage distributions.