A voltage generator includes a charge pump circuit including a first charge pump having a plurality of first pumping capacitors, and a second charge pump having a plurality of second pumping capacitors having a capacitance different from a capacitance of each of the plurality of first pumping capacitors. The charge pump circuit is configured to supply a power supply voltage to a power mesh. The voltage generator further includes a controller configured to output a control signal based on a target level of the power supply voltage, and an oscillator configured to output a clock signal to the charge pump circuit. The oscillator outputs the clock signal to one of the first charge pump and the second charge pump based on the control signal.

ABSTRACT A semiconductor memory device provides a first memory cell array including a plurality of first memory blocks, a second memory cell array comprising a plurality of second memory blocks, and a voltage supply line electrically connected to the plurality of first memory blocks and the plurality of second memory blocks. Moreover, this semiconductor memory device is configured to execute a write operation. At a first timing of this write operation, the voltage supply line is not electrically continuous with the first and second memory blocks. Moreover, a voltage of the voltage supply line at the first timing in the case of the write operation being executed on the first and second memory blocks is larger than a voltage of the voltage supply line at the first timing in the case of the write operation being executed on the first memory block.

A charge pump has a first branch that includes a first node connected between a first pull-up switch and a first pull-down switch and a second branch that includes a second node connected between a second pull-up switch and a second pull-down switch. The second branch is connected in parallel with the first branch. The charge pump has a voltage equalization circuit to equalize a first voltage at the first node and a second voltage at the second node. A third branch includes a third node that is connected between a third pull-up switch and a third pull-down switch. The third node is connected to the second node. The third pull-up switch and the first pull-up switch are controlled by a common pull-up signal. The third pull-down switch and the first pull-down switch are controlled by a common pull-down signal.

In an anti-fuse programming control circuit based on a master-slave charge pump structure, a master charge pump module obtains an external voltage and is connected to a plurality of slave charge pump modules. Each slave charge pump module is connected to an anti-fuse bank. The distance between the layout position of each slave charge pump module and the layout position of the connected anti-fuse bank does not exceed a predetermined distance. Based on a programming voltage output by each slave charge pump module to the connected anti-fuse bank, the feedback network outputs a feedback signal corresponding to the slave charge pump module to the master charge pump module. Based on the feedback signal corresponding to each slave charge pump module, the master charge pump module adjusts a master drive signal provided to the slave charge pump module to stabilize the programming voltage output by the slave charge pump module.

Provided is a gate controller having a primary signal input which is AC coupled to the gate through a capacitor, one or more bias inputs each connected to the gate through a resistor such as to control the DC voltage bias of the gate and therefore the conductivity of the switching element. The bias inputs can be properly connected to internal nodes of the charge pump, or charge pump stages, such that the gate controller is self-biased, without using bias-reference external to the charge pump. The gate controller can be made programmable by using potentiometers in place of the bias resistors. The programmable gate controller stages can be connected to form a programmable gate controlled charge pump

A power control unit is provided to control the efficiency of a charge pump converter having a first input terminal and a second input terminal, a primary attenuator and a secondary attenuator between a first input terminal and the second input terminal, a first output terminal, a second output terminal, a secondary attenuator controlling terminal and a primary attenuator controlling terminal to be plugged to the power control unit. The primary attenuator controlling terminal and the secondary attenuator controlling terminal are to attenuate or amplify a signal of the first input terminal and the second input terminal.

An internal voltage generation device includes: a voltage detection circuit generating a first detection signal by comparing a first voltage with a target voltage; a voltage difference detection circuit enabled in response to an operation enable signal, generating a second detection signal by comparing a voltage difference between the first voltage and a second voltage with a target gap voltage; a control circuit generating a first up/down code and the operation enable signal according to the first detection signal, and generating a second up/down code according to the second detection signal; a first voltage generation circuit generating the first voltage by down-converting a supply voltage, and adjusting a level of the first voltage according to the first up/down code; and a second voltage generation circuit generating the second voltage by boosting up the supply voltage, and adjusting a level of the second voltage according to the second up/down code.

A memory device includes a well, a first gate layer, a second gate layer, a doped region, a blocking layer and an alignment layer. The first gate layer is formed on the well. The second gate layer is formed on the well. The doped region is formed within the well and located between the first gate layer and the second gate layer. The blocking layer is formed to cover the first gate layer, the first doped region and a part of the second gate layer and used to block electrons from excessively escaping. The alignment layer is formed on the blocking layer and above the first gate layer, the doped region and the part of the second gate layer. The alignment layer is thinner than the blocking layer, and the alignment layer is thinner than the first gate layer and the second gate layer.

A non-volatile memory device is provided. The non-volatile memory device may include a memory cell array, a first pumping circuit configured to output a first pumping voltage, a second pumping circuit configured to pump the first pumping voltage of the first pumping circuit to output a second pumping voltage, and a pumping circuit control unit which is connected to the first pumping circuit and the second pumping circuit and configured to output at least one of the first pumping voltage and the second pumping voltage to the memory cell array. The first pumping circuit may be enabled in a first mode and a second mode different from the first mode, and the second pumping circuit may be disabled or not enabled in the first mode and enabled in the second mode.

An electronic device comprises a multi-chip package including multiple memory dice that include a memory array, charging circuitry, polling circuitry and a control unit. The charging circuitry is configured to perform one or more memory events in a high current mode using a high current level or in a low current mode using a lower current level. The polling circuitry is configured to poll a power status node common to the multiple memory dice to determine availability of the high current mode. The control unit is configured to operate the charging circuitry in the high current mode to perform the one or more memory events when the polling circuitry indicates that the high current mode is available, and operate the charging circuitry in the low current mode to perform the one or more memory events when the polling circuitry indicates that the high current mode is unavailable.