Embodiments relate to improving the biasing of active electronic components such as, for example, sense amplifiers. Embodiments include an adjustable bias signal generator that receives a reference signal as an input and generates a corresponding bias signal as an output. The adjustable bias signal generator may comprise a voltage driver and capacitor divider circuitry. In some embodiments, the capacitor divider circuitry is configurable by selecting specific capacitor dividers using a digital code. In other embodiments, the voltage driver is adjustable by applying different trim settings to tune the output of the voltage driver. The voltage driver may be temperature compensated by multiplexing different trim settings that correspond to different temperatures.

The present disclosure provides a memory array. The memory array includes a first memory cell, a first word line, a second word line, a first bit line, a first complementary bit line, a second bit line, a second complementary bit line, a first sense amplifier, a second sense amplifier and a first logic circuit. When the memory array operates in a binary content-addressable memory (BCAM) mode, during a search operation, a first logic output indicates whether a logic level of the first word line matches a first logic value at a first terminal of a first data storage of the first memory cell, and whether a logic level of the second word line matches a first complementary logic value at a second terminal of the first data storage of the first memory cell.

Methods, systems, and devices for sense amplifier with digit line multiplexing are described. A method includes precharging an input and an output of an amplifier stage of a sense component to a first voltage based on a read operation associated with a memory cell. The method includes precharging a first side and a second side of a latch stage of the sense component to the first voltage based on precharging the output of the amplifier stage to the first voltage, the latch stage coupled with the amplifier stage. The method may also include coupling a second voltage from a digit line associated with the memory cell to the input of the amplifier stage, the amplifier stage generating a third voltage on the output based on coupling the second voltage to the input, and the latch stage latching a logic value associated with the memory cell based on the third voltage.

The present invention includes apparatus and a method for reading one or more data states from an integrated circuitry memory cell, including the steps of connecting the memory cell to a bit line which is connected to an amplifier having an offset control which introduces an offset during the sensing portion of a read cycle to identify a data state stored in the memory cell.

Methods, systems, and devices for apparatus for differential memory cells are described. An apparatus may include a pair of memory cells comprising a first memory cell and a second memory cell, a word line coupled with the pair of memory cells and a plate line coupled with the pair of memory cells. The apparatus may further include a first digit line coupled with the first memory cell and a sense amplifier and a second digit line coupled with the second memory cell and the sense amplifier. The apparatus may include a select line configured to couple the first digit line and the second digit line with the sense amplifier.

A sense amplifier of a memory device that includes sense amplifier circuits and a reference sharing circuit is introduced. The sense amplifier circuits are configured to sense the plurality of bit lines according to an enable signal. The reference sharing circuit includes first switches and second switches that are coupled to the reference nodes and second reference nodes of the sense amplifier circuits, respectively. The first switches and second switches are controlled according to a control signal to control a first electrical connection among the first reference nodes, and to control a second electrical connection among the second reference nodes. An operation method of the sense amplifier and a memory device including the sense amplifier are also introduced.

An electronic device includes a dock dividing circuit configured to generate sampling clocks, alignment clocks and output clocks by dividing a frequency of a write clock; and a data alignment circuit configured to, in a first operation mode, receive input data having any one level among a first level to a fourth level and generate alignment data by aligning the input data in synchronization with the sampling clocks, the alignment clocks and the output clocks, and to, in a second operation mode, receive the input data having any one level of the first level and the fourth level and generate the alignment data by aligning the input data in synchronization with the sampling clocks, the alignment clocks and the output clocks.

Methods, systems, and devices for delay adjustment circuits are described. Amplifiers (e.g., differential amplifiers) may act like variable capacitors (e.g., due to the Miller-effect) to control delays of signals between buffer (e.g., re-driver) stages. The gains of the amplifiers may be adjusted by adjusting the currents through the amplifiers, which may change the apparent capacitances seen by the signal line (due to the Miller-effect). The capacitance of each amplifier may be the intrinsic capacitance of input transistors that make up the amplifier, or may be a discrete capacitor. In some examples, two differential stages may be inserted on a four-phase clocking system (e.g., one on 0 and 180 phases, the other on 90 and 270 phases), and may be controlled differentially to control phase-to-phase delay.

A memory includes read circuitry for reading values stored in memory cells. The read circuitry includes flipped voltage followers for providing bias voltages to nodes of current paths coupled to sense amplifiers during memory read operations.

A computer system with a small circuit area and reduced power consumption is used. The computer system includes a computer node including a processor and a three-dimensional NAND memory device. The three-dimensional NAND memory device includes a first string and a second string in different blocks. The first string includes a first memory cell, and the second string includes a second memory cell. On reception of first data and a signal including an instruction to write the first data, the controller writes the first data to the first memory cell. Then, the controller reads the first data from the first memory cell and writes the first data to the second memory cell. Thus, the computer node can eliminate a main memory such as a DRAM from the structure.