An adaptive control circuit of SRAM (Static Random Access Memory) includes a switch circuit, a forward diode-connected transistor, a backward diode-connected transistor, and a first delay circuit. The switch circuit is supplied by a supply voltage, and is coupled to a first node. The backward diode-connected transistor is coupled in parallel with the forward diode-connected transistor between the first node and a second node. The first delay circuit is coupled between the second node and a ground voltage.

According to some embodiments, for a memory device including a base die and a stack of memory dies including a plurality of memory dies stacked on the base die, the base die including a plurality of first input/output (i/o) terminals that are command/address and data terminals and a plurality of second i/o terminals that are direct access terminals, a method includes receiving at the plurality of first i/o terminals a command/address, a clock signal, and data; first transmitting the command/address, clock signal, and data received by the plurality of first i/o terminals from the base die to the stack of memory dies; and second transmitting at least part of one or more of the command/address, clock signal, and data received by a set of the plurality of first i/o terminals through a circuit of the base die to the plurality of second i/o terminals.

A memory device in which reliability of a clock signal is improved is provided. The memory device comprises a data module including a clock signal generator configured to receive an internal clock signal from a buffer, and to generate a first internal clock signal, a second internal clock signal, a third internal clock signal, and a fourth internal clock signal having different phases, on the basis of the internal clock signal, and a first data signal generator configured to generate a first data signal on the basis of first data and the first internal clock signal, generate a second data signal on the basis of second data and the second internal clock signal, generate a third data signal on the basis of third data and the third internal clock signal, and generate a fourth data signal on the basis of fourth data and the fourth internal clock signal.

Systems and methods are provided for controlling power down of an integrated dual rail memory circuit. The power down system is configured to power down the power rail for input and logic components (VDD) while maintaining power to the power rail for the memory cells (VDDM). The power down system includes two voltage rails, a clock generator, and a power detector for detecting the power on VDD. The power detector generates an isolated power signal when voltage on VDD is below a voltage threshold. The isolated power signal is configured to disable the clock generator and thus reduce dynamic power as the read/write cycle is not triggered during power down.

A system includes a mixer of a phase interpolator. The mixer includes a dynamic load whose output signal is coupled to a subsequent stage of the phase interpolator. The dynamic load is configured to provide an alternating current (AC) signal to the subsequent stage of the phase interpolator as input clock signals. The mixer further includes a static load whose output signal is coupled to the subsequent stage of the phase interpolator in parallel with the respective output signal line of the dynamic load. The static load configured to provide a direct current (DC) signal to the phase interpolator temporarily in replacement of the respective AC signals to prevent output signals of the subsequent stage of the phase interpolator from being unpredictable.

A memory device includes a memory cell array having memory cells connected to wordlines and bitlines, and a clock buffer receiving a clock signal for performing a read operation or a write operation on at least one of the memory cells. The clock buffer includes a plurality of serially connected clock repeaters, and the plurality of clock repeaters have at least one pair of clock repeaters having different imbalanced driving capabilities.

Methods, systems, and apparatuses related to configured dual register clock driver (RCD) devices on a single memory subsystem using different configuration information are described. In some examples, configuration of the two RCD devices with different configuration information may include use of a serial data bus to receive and store first RCD configuration data, which is provided to both of the RCD devices to configure one or more parameters of each respective RCD device. One of the RCD devices may receive second configuration data via a command and address bus to independently update the one or more configuration parameters of one of the two RCD devices.

Apparatuses and methods including memory commands for semiconductor memories are described. An example method includes receiving a data clock signal responsive to receiving a timing command, performing an access operation responsive to receiving an access command associated with the timing command, providing an access data clock signal based on the data clock signal, and providing an access data clock signal based on the data clock signal. The access command may be separated in time from the associated timing command by at least one clock cycle of a system clock signal. In some examples, the access command may precede the associated timing command or may follow the associated timing command. In some examples, the access command may immediately follow or precede the associated timing command.

A semiconductor device includes: a multi-level receiver including N sense amplifiers and a decoder decoding an output of the N sense amplifiers, each of the N sense amplifiers receiving a multi-level signal having M levels and a reference signal (where M is a natural number, higher than 2, and where N is a natural number, lower than M); a clock buffer receiving a reference clock signal; and a clock controller generating N clock signals using the reference clock signal, inputting the N clock signals to the N sense amplifiers, respectively, and individually determining a phase of each of the N clock signals using the output of the N sense amplifiers.

Apparatuses for controlling latencies on input signal paths in semiconductor devices are disclosed. An example apparatus includes: a clock input buffer that provides a reference clock signal and a system clock signal based on an external clock signal; a command decoder that latches command signals with the system clock signal and further provides a signal based on the command signals; and a command delay adjustment circuit including: a clock synchronizing circuit that receives the signal, latches the signal with the system clock signal and provides a clock-synchronized read signal responsive to a shift cycle parameter.