Techniques of processing and/or persistently store data using nanomagnetic elements are disclosed herein. In one example, a processing circuit includes a substrate and a plurality of nanomagnetic elements spaced apart from one another. The plurality of nanomagnetic elements have shape-induced magnetic anisotropy and individually include a geometric center and at least three vertices extending away from the geometric center. One of the nanomagnetic elements has a vertex magnetically coupled to another vertex of another nanomagnetic element such that a magnetic polarity change at the vertex at the one of the plurality of nanomagnetic elements causes a responsive magnetic polarity change at the vertex at the another nanomagnetic element to generate an output of the processing circuit.

A ferromagnetic free layer, a preparation method and an application thereof are provided, where the ferromagnetic layer includes a magnetic film alloy, and the magnetic film alloy includes multiple layers of laminated films. A thickness of each of the films decreases gradually from a first end to a second end of the magnetic film alloy, so as to break in-plane structural symmetry of the magnetic film alloy, and the films include heavy metal films and ferromagnetic metal films, where out-of-plane crystal symmetry of the magnetic film alloy is broken by means of component gradients. When a current is applied in plane of the magnetic film alloy, a spin orbit torque will be generated, which directly drives the magnetic moment of the magnetic film alloy to undergo a deterministic magnetization reversal.

According to one embodiment, a semiconductor storage device includes a first memory cell capable of storing n-bit data (n is a natural number not less than 4). When receiving first data, including first and second bits of the n-bit data, from a controller, the semiconductor storage device writes the received first data to the first memory cell. After receiving the first data, when the semiconductor storage device receives second data including third and fourth bits of the n-bit data, the semiconductor storage device reads the first and second bits from the first memory cell and writes the n-bit data to the first memory cell based on the read first and second bits and the received second data.

Techniques of processing and/or persistently store data using nanomagnetic elements are disclosed herein. In one example, a processing circuit includes a substrate and a plurality of nanomagnetic elements spaced apart from one another. The plurality of nanomagnetic elements have shape-induced magnetic anisotropy and individually include a geometric center and at least three vertices extending away from the geometric center. One of the nanomagnetic elements has a vertex magnetically coupled to another vertex of another nanomagnetic element such that a magnetic polarity change at the vertex at the one of the plurality of nanomagnetic elements causes a responsive magnetic polarity change at the vertex at the another nanomagnetic element to generate an output of the processing circuit.

Techniques of processing and/or persistently store data using nanomagnetic elements are disclosed herein. In one example, a processing circuit includes a substrate and a plurality of nanomagnetic elements spaced apart from one another. The plurality of nanomagnetic elements have shape-induced magnetic anisotropy and individually include a geometric center and at least three vertices extending away from the geometric center. One of the nanomagnetic elements has a vertex magnetically coupled to another vertex of another nanomagnetic element such that a magnetic polarity change at the vertex at the one of the plurality of nanomagnetic elements causes a responsive magnetic polarity change at the vertex at the another nanomagnetic element to generate an output of the processing circuit.