Subject matter disclosed herein relates to techniques to read memory in a continuous fashion.

A nonvolatile memory device includes memory cells, bit lines, a word line, and a control unit performing a write operation in first and second stages. During the first stage, the control unit applies voltages to the word line and the bit lines based on first page of data to maintain threshold voltages for a first group of memory cells and shift the threshold voltages for a second group of memory cells above a first threshold. During the second stage, the control unit applies voltages to the word line and the bit lines based on second and third pages of data to shift the threshold voltages of memory cells in the first group to threshold voltages in one of first, second, and third threshold voltage ranges and the threshold voltages of memory cells in the second group to threshold voltages in one of fourth, fifth, sixth, and seventh threshold voltage ranges.

Data storage circuits are connected to the bit lines in a one-to-one correspondence. A write circuit writes the data on a first page into a plurality of 5 first memory cells selected simultaneously by a word line. Thereafter, the write circuit writes the data on a second page into the plurality of first memory cell. Then, the write circuit writes the data on the first and second pages into second memory cells adjoining 10 the first memory cells in the bit line direction.

A fine-grained analog memory device includes: 1) a charge-trapping transistor including a gate and a high-k gate dielectric; and 2) a pulse generator connected to the gate and configured to apply a positive or negative pulse to the gate to change an amount of charges trapped in the high-k gate dielectric.

According to one embodiment, a semiconductor memory device includes memory units each includes a first transistor, memory cell transistors, and a second transistor serially coupled between first and second ends. A memory cell transistor of each memory unit has its gate electrode coupled to each other. A bit line is coupled to the first ends. First and second drivers output voltage applied to selected and unselected first transistors, respectively. Third and fourth drivers output voltage applied to selected and unselected second transistors, respectively. A selector couples the gate electrode of the first transistor of each memory unit to the first or second driver, and that of the second transistor of each memory unit to the third or fourth driver.

A method of making a monolithic three dimensional NAND string which contains a semiconductor channel and a plurality of control gate electrodes, includes selectively forming a plurality of discrete charge storage regions using atomic layer deposition. The plurality of discrete charge storage regions includes at least one of a metal or an electrically conductive metal oxide.

A first threshold temperature is maintained for operating a solid state drive (SSD) in a first mode. A second threshold temperature is maintained for operating the SSD in a second mode in which read and write operations are performed at a higher rate than in the first mode, wherein the second threshold temperature is higher than the first threshold temperature. The SSD is switched from the first mode to the second mode, in response to an operating temperature of the SSD exceeding the first threshold temperature.

A semiconductor storage device includes a memory cell and a control circuit configured to, upon receipt of a command, acquire a first temperature measured by a temperature sensor, and perform an operation corresponding to the command using a parameter corrected based on temperature. When the first temperature is within a predetermined range with respect to a second temperature measured before the command is received, the parameter is corrected using the second temperature. When the first temperature is outside the predetermined range, the parameter is corrected using the first temperature.

Systems, apparatuses, and methods related to a neuron using posits are described. An example apparatus may include a memory array including a plurality of memory cells configured to store data. The data can include a plurality of bit strings. The example apparatus may include a neuron component coupled to the memory array. The neuron component can include neuron circuitry configured to perform neuromorphic operations on at least one of the plurality of bit strings.

Systems, apparatuses, and methods related to a neuron using posits are described. An example apparatus may include a memory array including a plurality of memory cells configured to store data. The data can include a plurality of bit strings. The example apparatus may include a neuron component coupled to the memory array. The neuron component can include neuron circuitry configured to perform neuromorphic operations on at least one of the plurality of bit strings.