A cryogenic memory cell and a memory device are provided. The cryogenic memory cell includes a spin moment transfer device. The spin moment transfer device converts a write current into a spin polarization current and changes a magnetic polarization direction under the action of the spin polarization current to achieve write storage of 0 and 1. The cryogenic memory cell also includes a nano-superconducting quantum interference device; a ground terminal of the nano-superconducting quantum interference device is in common-ground connection with a ground terminal of the spin moment transfer device, and the nano-superconducting quantum interference device undergoes a magnetic flux change under the action of a change in the magnetic polarization direction of the spin moment transfer device, thereby switching between a superconducting state and a non-superconducting state under a read current bias, to achieve read-out of 0 and 1.

An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.

An atomic orbital based memory storage is provided that includes a plurality of surface atoms forming dangling bonds (DBs) and a subset of the plurality of surface atoms passivated with spatial control to form covalent bonds with hydrogen, deuterium, or a combination thereof. The atomic orbital based data storage that can be rewritten and corrected as needed. The resulting data storage is also archival and capable of high data densities than any known storage as the data is retained in a binary storage or a given orbital being passivated or a dangling bond (DB). A method of forming and reading the atomic orbital data storage is also provided. The method including selectively removing covalent bonds to form dangling bonds (DBs) extending from a surface atom by hydrogen lithography and imaging the covalent bonds spatially to read the atomic orbital data storage.

A cryogenic multilayer interconnect structure has a substrate including a molybdenum layer, a first insulating layer on the substrate and a first superconducting layer on the first insulating layer. The molybdenum layer has a coefficient of thermal expansion (CTE) that is well matched with the CTE of cryogenic electronic chips that are to be attached to the cryogenic multilayer interconnect structure. The substrate may be a copper clad molybdenum substrate that provide the CTE advantages provided by the molybdenum layer while also providing an increased thermal conductivity to improve the dissipation of heat generated by cryogenic electronic chips coupled to the substrate.

A novel and useful quantum computing machine architecture that includes a classic computing core as well as a quantum computing core. A programmable pattern generator executes sequences of instructions that control the quantum core. In accordance with the sequences, a pulse generator functions to generate the control signals that are input to the quantum core to perform quantum operations. A partial readout of the quantum state in the quantum core is generated that is subsequently re-injected back into the quantum core to extend decoherence time. Access gates control movement of quantum particles in the quantum core. Errors are corrected from the partial readout before being re-injected back into the quantum core. Internal and external calibration loops calculate error syndromes and calibrate the control pulses input to the quantum core. Control of the quantum core is provided from an external support unit via the pattern generator or can be retrieved from classic memory where sequences of commands for the quantum core are stored a priori in the memory. A cryostat unit functions to provide several temperatures to the quantum machine including a temperature to cool the quantum computing core to approximately 4 Kelvin.

A buffer layer can be used to smooth the surface roughness of a galvanic contact layer (e.g., of niobium) in an electronic device, the buffer layer being made of a stack of at least four (e.g., six) layers of a face-centered cubic (FCC) crystal structure material, such as copper, the at least four FCC material layers alternating with at least three layers of a body-centered cubic (BCC) crystal structure material, such as niobium, wherein each of the FCC material layers and BCC material layers is between about five and about ten angstroms thick. The buffer layer can provide the smoothing while still maintaining desirable transport properties of a device in which the buffer layer is used, such as a magnetic Josephson junction, and magnetics of an overlying magnetic layer in the device, thereby permitting for improved magnetic Josephson junctions (MJJs) and thus improved superconducting memory arrays and other devices.

A buffer layer can be used to smooth the surface roughness of a galvanic contact layer (e.g., of niobium) in an electronic device, the buffer layer being made of a stack of at least four (e.g., six) layers of a face-centered cubic (FCC) crystal structure material, such as copper, the at least four FCC material layers alternating with at least three layers of a body-centered cubic (BCC) crystal structure material, such as niobium, wherein each of the FCC material layers and BCC material layers is between about five and about ten angstroms thick. The buffer layer can provide the smoothing while still maintaining desirable transport properties of a device in which the buffer layer is used, such as a magnetic Josephson junction, and magnetics of an overlying magnetic layer in the device, thereby permitting for improved magnetic Josephson junctions (MJJs) and thus improved superconducting memory arrays and other devices.

Systems and methods related to charge locking circuits and a control system for qubits are provided. A system for controlling qubit gates includes a first packaged device comprising a quantum device including a plurality of qubit gates, where the quantum device is configured to operate at a cryogenic temperature. The system further includes a second packaged device comprising a control circuit configured to operate at the cryogenic temperature, where the first packaged device is coupled to the second packaged device, and where the control circuit comprises a plurality of charge locking circuits, where each of the plurality of charge locking circuits is coupled to at least one qubit gate of the plurality of qubit gates via an interconnect such that each of the plurality of charge locking circuits is configured to provide a voltage signal to at least one qubit gate.

Systems and methods related to charge locking circuits and a control system for qubits are provided. A system for controlling qubit gates includes a first packaged device comprising a quantum device including a plurality of qubit gates, where the quantum device is configured to operate at a cryogenic temperature. The system further includes a second packaged device comprising a control circuit configured to operate at the cryogenic temperature, where the first packaged device is coupled to the second packaged device, and where the control circuit comprises a plurality of charge locking circuits, where each of the plurality of charge locking circuits is coupled to at least one qubit gate of the plurality of qubit gates via an interconnect such that each of the plurality of charge locking circuits is configured to provide a voltage signal to at least one qubit gate.

Systems and techniques that facilitate TLS-based optimization of Stark tone tuning are provided. In various embodiments, a system can comprise a receiver component that can access a qubit topology. In various aspects, the system can further comprise an optimization component that can identify, based on a set of two-level-system, (TLS) frequency regions of the qubit topology, one or more Stark tone frequencies. In various instances, the system can further comprise an execution component that can apply, to a qubit lattice corresponding to the qubit topology, one or more Stark tones that have the one or more Stark tone frequencies, thereby eliminating frequency collisions in the qubit lattice.