Apparatus and methods for recovery after an abort event are described. A data storage system may comprise a non-volatile memory device, having one or more wordlines configured to receive a read level voltage, and a controller. The controller is configured to detect whether a write abort event occurred for the data storage system. The controller is configured to determine a first voltage offset based on one or more of a wear-level indication of the non-volatile memory device, or one or more voltage parameters of the non-volatile memory device. The controller is configured to determine, based on the first voltage offset, an adjusted read level voltage. The controller is configured to apply the adjusted read level voltage to a wordline of the non-volatile memory device. The controller is configured to read data, based on the applied adjusted read level voltage, from the wordline of the non-volatile memory device.

Apparatus and methods for recovery after an abort event are described. A data storage system may comprise a non-volatile memory device, having one or more wordlines configured to receive a read level voltage, and a controller. The controller is configured to detect whether a write abort event occurred for the data storage system. The controller is configured to determine a first voltage offset based on one or more of a wear-level indication of the non-volatile memory device, or one or more voltage parameters of the non-volatile memory device. The controller is configured to determine, based on the first voltage offset, an adjusted read level voltage. The controller is configured to apply the adjusted read level voltage to a wordline of the non-volatile memory device. The controller is configured to read data, based on the applied adjusted read level voltage, from the wordline of the non-volatile memory device.

A non-volatile memory device includes a substrate, a plurality of memory blocks grouped into pages, each including an alternating layer stack on the substrate, a plurality of channel holes in the alternating layer stack, and strings of memory cells disposed along the plurality of channel holes, and at least one dummy block adjacent to the plurality of memory blocks, each including an alternating dummy layer stack having multiple conductive layers and multiple dielectric layers alternately laminated on one another on the substrate, the at least one dummy block is disposed at an outskirt of each of the pages of the plurality of memory blocks.

A media management operation is executed to write data from a source block of a cache memory to a set of pages of a destination block of a storage area of a memory sub-system. An entry of a data structure identifying a page count corresponding to the source block of the cache memory is generated. A power loss event associated with the destination block of the storage area is identified. A data recovery operation is executed using the data stored in the source block to complete the write to the destination block. The data is erased from the source block in response to the page count satisfying a condition.

A non-volatile memory device includes a substrate, a plurality of memory blocks grouped into pages, each including an alternating layer stack on the substrate, a plurality of channel holes in the alternating layer stack, and strings of memory cells disposed along the plurality of channel holes, and at least one dummy block adjacent to the plurality of memory blocks, each including an alternating dummy layer stack having multiple conductive layers and multiple dielectric layers alternately laminated on one another on the substrate, the at least one dummy block is disposed at an outskirt of each of the pages of the plurality of memory blocks.

In one embodiment, an apparatus includes a volatile memory module configured to store vehicle data, and a refrigeration module coupled to the volatile memory module. The refrigeration module includes one or more chambers containing one or more coolant materials. When the one or more chambers are exposed by an exigent situation associated with a vehicle, the one or more chambers are configured to release the one or more coolant materials to lower a temperature of the volatile memory module.

A memory device includes a memory array and at least one first vertical transistor over a dielectric substrate. The at least one first vertical transistor is disposed above the dielectric substrate in a staircase region, and includes: a first wraparound gate layer, a channel pillar, a gate dielectric layer, a first source and drain region, and a second source and drain region. The first wraparound gate layer is laterally adjacent to a gate stack structure of the memory array. The channel pillar extends through the first wraparound gate layer. The gate dielectric layer is disposed between the channel pillar and the first wraparound gate layer. The first source and drain region is disposed below and electrically connected to the bottom of the channel pillar. The second source and drain region is disposed above and electrically connected to the top of the channel pillar.

Disclosed are systems and methods of dynamically calibrating a memory control voltage more accurately. According to disclosed implementations, a memory control voltage such as Vpass or Vwlrv may be calibrated during memory operation as a function of the change in slope of total string current, even during increase in the wordline voltage. In one exemplary method, the wordlines are increased in sequence from a start voltage to an end voltage in steps, slope change is measured at every step, the measured slope change is compared against a threshold, and an adjusted memory control voltage is determined as a function of a wordline voltage at which the change in slope reaches the threshold. As such, memory control voltage may be determined and dynamically calibrated with less sensitivity to operating parameters such as temperature, pattern, and/or time of programming.

According to one embodiment, a memory system includes a nonvolatile memory and a memory controller configured to execute a patrol process, in response to a first command set from a host device. In the patrol process, the memory controller is configured to read first data from the nonvolatile memory, and not to output the first data to the host device.

A 3D device, the device including: a first level including logic circuits; and a second level including a plurality of memory cells, where the first level is bonded to the second level, where the bonded includes oxide to oxide bonds, and where the logic circuits include a programmable logic circuit.