A media management operation to write data from a source block of a cache memory to a set of pages of a destination block of a storage area of a memory sub-system that is at a higher data density than the cache memory a write request to program data to a memory device of a memory sub-system is executed. An entry of a first data structure identifying a page count corresponding to the source block of the cache memory is generated. Following a determination that the data is written to the set of pages of the destination block of the storage area, the entry is updated to identify a decreased page count corresponding to the source block, where the data is erased from the source block when the decreased page count satisfies a condition. A second entry of a second data structure including information mapping a logical block to the source block of the cache memory is also updated.

According to the embodiments, an external storage device switches to an interface controller for supporting only a read operation of nonvolatile memory when a shift condition for shifting to a read only mode is met. A host device switches to an interface driver for supporting only the read operation of the nonvolatile memory when determining to recognize as read only memory based on information acquired from the external storage device.

Provided is an operation method for a memory device, the operation method comprising: performing an erase operation; performing a verify-read operation on a memory cell to generate a cell current, the memory cell including a first transistor and a second transistor; checking whether the cell current is lower than a first cell current threshold; when the cell current is not lower than the first cell current threshold, increasing a memory gate voltage until the cell current is lower than the first cell current threshold, wherein the memory gate voltage is applied to the first transistor; fixing the memory gate voltage and increasing a drain voltage; checking whether the cell current is lower than a second cell current threshold; and if the cell current is not lower than the second cell current threshold, increasing the drain voltage until the cell current is lower than the second cell current threshold.

Control logic in a memory device initiates, subsequent to a program verify phase of a program operation, a new program operation on the memory array, the new program operation comprising a pre-boosting phase occurring prior to a program phase. The control logic causing one or more positive pre-boosting voltages to be applied to corresponding subsets of a plurality of word lines of a block of the memory array during the pre-boosting phase and causes the one or more positive pre-boosting voltages to be ramped down to a ground voltage during the pre-boosting phase in a designated order based on a location of the corresponding subsets of the plurality of word lines to which the one or more positive pre-boosting voltages were applied.

Apparatuses and methods for inferring threshold voltage distributions associated with memory cells via interpolation are described herein. An example includes determining soft data for a group of memory cells each programmed to one of a number of data states, wherein the soft data comprises a number of different soft data values, determining a quantity of memory cells associated with each of the different soft data values, and inferring at least a portion of a threshold voltage distribution associated with the group of memory cells via an interpolation process using the determined quantities of memory cells associated with each of the different soft data values.

A solution for combining a portion of data from a block of single level cells to a block of multi-level cells. The solution includes identifying word lines with only valid data and word lines with non-valid data in a selected block of single level cells, copying data from word lines with valid data to a destination block of multi-level cells and copying data from word lines in the selected block of single level cells with non-valid data to a separate compaction block of single level cells. The system includes a first controller module configured to scan for word lines with only valid data and pass a bitmap identifying valid and invalid word lines to a second controller module. The second controller module is configured to perform on-chip combining of data from valid word lines, and copy data from invalid data word lines to a compaction block of single level cells.

Control logic in a memory device initiates, subsequent to a program verify phase of a program operation, a new program operation on the memory array, the new program operation comprising a pre-boosting phase occurring prior to a program phase. The control logic causing one or more positive pre-boosting voltages to be applied to corresponding subsets of a plurality of word lines of a block of the memory array during the pre-boosting phase and causes the one or more positive pre-boosting voltages to be ramped down to a ground voltage during the pre-boosting phase in a designated order based on a location of the corresponding subsets of the plurality of word lines to which the one or more positive pre-boosting voltages were applied.

Some embodiments include an assembly having a stack of alternating dielectric levels and conductive levels. Channel material pillars extend through the stack. Some of the channel material pillars are associated with a first sub-block, and others of the channel material pillars are associated with a second sub-block. Memory cells are along the channel material pillars. An insulative level is over the stack. A select gate configuration is over the insulative level. The select gate configuration includes a first conductive gate structure associated with the first sub-block, and includes a second conductive gate structure associated with the second sub-block. The first and second conductive gate structures are laterally spaced from one another by an intervening insulative region. The first and second conductive gate structures have vertically-spaced conductive regions, and have vertically-extending conductive structures which electrically couple the vertically-spaced conductive regions to one another. Some embodiments include methods of forming assemblies.

A memory controller includes a state shaping encoder that receives k-bit write data, selects a logical page with reference to state shape mapping information, and changes data of the logical page to decrease an occurrence probability of a high-order program state among program states used to program the k-bit data in multi-level memory cells.

An instruction to write data to a write logical address is received where the write logical address is a member of a group of one or more logical addresses. It is determined if data associated with any of the logical addresses in the group of logical addresses has been written to any of a plurality of open groups of locations. If so, the data is written to the open group of locations to which data from the group of logical addresses has already been written to. If not, an open group of locations to write to is selected from the plurality of open groups of locations.