A quantum storage device, including: a sample cryostat configured to load a storage crystal and a filter crystal and configured to cool the storage crystal and the filter crystal to a preset temperature; a laser control system configured to generate a control light and a signal light to perform a quantum storage of the signal light based on a spin population locking; a quantum state encoding and analysis system configured to perform a quantum state encoding and analysis of signal photons; and a filtering system configured to suppress noise introduced by the control light and extract the signal photons. The storage device has the advantages of long storage life, high signal-to-noise ratio, and strong anti-interference ability. The device is simple and easy to operate.

A method of switching between first and second states of a van der Waals heterostructure, vdWH, memory device, a vdWH memory device, and a method of fabricating a vdWH memory device. The vdWH memory device comprises a first two-dimensional, 2D, material; and a second 2D material, wherein, in a first storage state of the memory device, an interface between the first and second 2D material comprises interfacial states; and wherein, in a second storage state of the memory device, interfacial states are modulated compared to the first memory state.

Methods, systems, techniques, and devices for operating a ferroelectric memory cell or cells are described. A first ferroelectric memory cell may be used to charge a second ferroelectric memory cell by transferring charge from a plate of first ferroelectric memory cell to a plate of the second ferroelectric memory cell. In some examples, prior to the transfer of charge, the first ferroelectric memory cell may be selected for a first operation in which the first ferroelectric memory cell transitions from a charged state to a discharged state and the second ferroelectric memory cell may be selected for a second operation during which the second ferroelectric memory cell transitions from a discharged state to a charged state. The discharging of the first ferroelectric memory cell may be used to assist in charging the second ferroelectric memory cell.

A quantum storage device, including: a sample cryostat configured to load a storage crystal and a filter crystal and configured to cool the storage crystal and the filter crystal to a preset temperature; a laser control system configured to generate a control light and a signal light to perform a quantum storage of the signal light based on a spin population locking; a quantum state encoding and analysis system configured to perform a quantum state encoding and analysis of signal photons; and a filtering system configured to suppress noise introduced by the control light and extract the signal photons.

An optically gated transistor (OGT) device that may be used as a selector device for one or more variable resistive memory devices. The OGT device isolates the one or more variable resistive memory devices when the OGT is not optically activated. The amount of current conducted by the OGT device is dependent on an intensity of light optically applied to the OGT device. The OGT device includes alternating layers of germanium selenide (GeSe) and GeSe plus an additional element deposited on a substrate. The OGT device includes only two electrodes connected to the alternating layers deposited on the substrate. The OGT device may generate an amplified electrical signal with respect to the magnitude of a received optical signal. The OGT device may be used to generate an optical signal having a different wavelength than the wavelength of a received optical signal.

An apparatus includes a flow cell body, a plurality of electrodes, an integrated circuit, and an imaging assembly. The flow cell body defines one or more flow channels and a plurality of wells. Each flow channel is configured to receive a flow of fluid. Each well is fluidically coupled with the corresponding flow channel. Each well is configured to contain at least one polynucleotide. Each electrode is positioned in a corresponding well of the plurality of wells. The electrodes are operable to effect writing of polynucleotides in the corresponding wells. The integrated circuit is operable to drive selective deposition or activation of selected nucleotides to attach to polynucleotides in the wells to thereby generate polynucleotides representing machine-written data in the wells. The imaging assembly is operable to capture images indicative of one or more nucleotides in a polynucleotide.

An apparatus includes a flow cell body, a plurality of electrodes, an integrated circuit, and an imaging assembly. The flow cell body defines one or more flow channels and a plurality of wells. Each flow channel is configured to receive a flow of fluid. Each well is fluidically coupled with the corresponding flow channel. Each well is configured to contain at least one polynucleotide. Each electrode is positioned in a corresponding well of the plurality of wells. The electrodes are operable to effect writing of polynucleotides in the corresponding wells. The integrated circuit is operable to drive selective deposition or activation of selected nucleotides to attach to polynucleotides in the wells to thereby generate polynucleotides representing machine-written data in the wells. The imaging assembly is operable to capture images indicative of one or more nucleotides in a polynucleotide.

An apparatus includes a flow cell body, a plurality of electrodes, an integrated circuit, and an imaging assembly. The flow cell body defines one or more flow channels and a plurality of wells. Each flow channel is configured to receive a flow of fluid. Each well is fluidically coupled with the corresponding flow channel. Each well is configured to contain at least one polynucleotide. Each electrode is positioned in a corresponding well of the plurality of wells. The electrodes are operable to effect writing of polynucleotides in the corresponding wells. The integrated circuit is operable to drive selective deposition or activation of selected nucleotides to attach to polynucleotides in the wells to thereby generate polynucleotides representing machine-written data in the wells. The imaging assembly is operable to capture images indicative of one or more nucleotides in a polynucleotide.

A photonic spin register includes: a shift register unit including a magnetic material layer having a shape extending in one direction; and a write unit configured to write spin information into a magnetic domain in the magnetic material layer by transferring information included in an optical signal that is a pulse amplitude-modulated and serial input signal, to a spin state of the magnetic domain in the magnetic material layer by means of a photocurrent corresponding to the optical signal or by irradiation with the optical signal. When a shift current flows through the shift register unit in the one direction, a domain wall is configured to move in the magnetic material layer, thereby allowing the spin information to move and be buffered in the magnetic material layer.

An apparatus includes a flow cell body, a plurality of electrodes, an integrated circuit, and an imaging assembly. The flow cell body defines one or more flow channels and a plurality of wells. Each flow channel is configured to receive a flow of fluid. Each well is fluidically coupled with the corresponding flow channel. Each well is configured to contain at least one polynucleotide. Each electrode is positioned in a corresponding well of the plurality of wells. The electrodes are operable to effect writing of polynucleotides in the corresponding wells. The integrated circuit is operable to drive selective deposition or activation of selected nucleotides to attach to polynucleotides in the wells to thereby generate polynucleotides representing machine-written data in the wells. The imaging assembly is operable to capture images indicative of one or more nucleotides in a polynucleotide.