Embodiments described herein include systems and techniques for converting (i.e., transducing) a quantum-level (e.g., single photon) signal between the three wave forms (i.e., optical, acoustic, and microwave). A suspended crystalline structure is used at the nanometer scale to accomplish the desired behavior of the system as described in detail herein. Transducers that use a common acoustic intermediary transform optical signals to acoustic signals and vice versa as well as microwave signals to acoustic signals and vice versa. Other embodiments described herein include systems and techniques for storing a qubit in phonon memory having an extended coherence time. A suspended crystalline structure with specific geometric design is used at the nanometer scale to accomplish the desired behavior of the system.

Embodiments described herein include systems and techniques for converting (i.e., transducing) a quantum-level (e.g., single photon) signal between the three wave forms (i.e., optical, acoustic, and microwave). A suspended crystalline structure is used at the nanometer scale to accomplish the desired behavior of the system as described in detail herein. Transducers that use a common acoustic intermediary transform optical signals to acoustic signals and vice versa as well as microwave signals to acoustic signals and vice versa. Other embodiments described herein include systems and techniques for storing a qubit in phonon memory having an extended coherence time. A suspended crystalline structure with specific geometric design is used at the nanometer scale to accomplish the desired behavior of the system.

A circuit includes a serializer configured to receive a non-serialized input signal having a first bit-width and generate a plurality of serialized input signals each having a second bit-width. A memory array is configured to receive each of the plurality of serialized input signals. The memory array is further configured to generate a plurality of serialized output signals. A de-serializer is configured to receive the plurality of serialized output signals and generate a non-serialized output signal. The plurality of serialized output signals each have a bit-width equal to second bit-width and the non-serialized output signal has a bit-width equal to the first bit-width.

A circuit includes a serializer configured to receive a non-serialized input signal having a first bit-width and generate a plurality of serialized input signals each having a second bit-width. A memory array is configured to receive each of the plurality of serialized input signals. The memory array is further configured to generate a plurality of serialized output signals. A de-serializer is configured to receive the plurality of serialized output signals and generate a non-serialized output signal. The plurality of serialized output signals each have a bit-width equal to second bit-width and the non-serialized output signal has a bit-width equal to the first bit-width.

Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.

A quantum memory device includes an atomic ensemble (4) and a signal source of electromagnetic radiation (10) for generating modes to be stored and having a frequency corresponding to an off-resonant transition between first and second states in the atomic ensemble. The quantum memory device also includes a control source of electromagnetic radiation (12) for generating electromagnetic radiation having a frequency corresponding to an off-resonant atomic transition between second and third states in the atomic ensemble; the third state has a higher energy than the second state which has a higher energy than the first state. The signal source and the control source create a coherent excitation of the transition between the first state and the third state such that the atomic ensemble stores the signal source modes, and the control source subsequently stimulates emission of the stored modes from the atomic ensemble.

Embodiments described herein include systems and techniques for converting (i.e., transducing) a quantum-level (e.g., single photon) signal between the three wave forms (i.e., optical, acoustic, and microwave). A suspended crystalline structure is used at the nanometer scale to accomplish the desired behavior of the system as described in detail herein. Transducers that use a common acoustic intermediary transform optical signals to acoustic signals and vice versa as well as microwave signals to acoustic signals and vice versa. Other embodiments described herein include systems and techniques for storing a qubit in phonon memory having an extended coherence time. A suspended crystalline structure with specific geometric design is used at the nanometer scale to accomplish the desired behavior of the system.

An optoelectronic memristor includes a first electrode, a second electrode, and a solid electrolyte in between that is in electrical communication with the first electrode and the second electrode. The solid electrolyte has an electronic conductivity of about 10.sup.10 Siemens/cm to about 10.sup.4 Siemens/cm at room temperature. The first electrode, and optionally the second electrode, can be optically transparent at a specific wavelength and/or a wavelength range. A direct current (DC) voltage source is employed to apply an electric field across the solid electrolyte, which induces a spatial redistribution of ionic defects in the solid electrolyte. In turn, this causes a change in electrical resistance of the solid electrolyte. The application of the electric field can also cause a change in an optical property of the solid electrolyte at the specific wavelength, and/or at the wavelength range (or a portion thereof).

A circuit includes a serializer configured to receive a non-serialized input signal having a first bit-width and generate a plurality of serialized input signals each having a second bit-width. A memory array is configured to receive each of the plurality of serialized input signals. The memory array is further configured to generate a plurality of serialized output signals. A de-serializer is configured to receive the plurality of serialized output signals and generate a non-serialized output signal. The plurality of serialized output signals each have a bit-width equal to second bit-width and the non-serialized output signal has a bit-width equal to the first bit-width.

Described herein are embodiments of a photonic computing system comprising one or more processors in communication with disaggregated memory through one or more optical channels. The disaggregated memory comprises multiple memory units placed on a photonic substrate that includes a photonic network that can be programmed to configure which of the memory units can be accessed by each of the processor(s).