A quantum memory system includes a chalcogenide optical fiber link, a magnetic field generation unit and a pump laser. The chalcogenide optical fiber link includes a photon receiving end opposite a photon output end and is positioned within a magnetic field of the magnetic field generation unit when the magnetic field generation unit generates the magnetic field. The pump laser is optically coupled to the photon receiving end of the chalcogenide optical fiber link. The chalcogenide optical fiber link includes a core doped with a rare-earth element dopant. The rare-earth element dopant is configured to absorb a storage photon traversing the chalcogenide optical fiber link upon receipt of a first pump pulse output by the pump laser. Further, the rare-earth element dopant is configured to release the storage photon upon receipt of a second pump pulse output by the pump laser.

A system includes a data storage medium and a shockwave generator. The data storage medium includes cells and a plurality of layers. Each cell is configured to store information therein. At least two cells are arranged in a horizontal plane within a same layer of the plurality of layers of the data storage medium and at least two cells are arranged in a vertical plane in different layers of the plurality of layers of the data storage medium. The shockwave generator is configured to generate a shockwave signal that travels through a layer of the plurality of layers of the data storage medium. A target cell within the layer stores information responsive to a beam emitted from an emitter targeting the target cell as the shockwave signal is passing through the target cell. The target cell maintains the information after the shockwave signal exits through the target cell.

A circuit includes a serializer configured to receive a non-serialized input signal having a first bit-width and generate a plurality of serialized input signals each having a second bit-width. A memory array is configured to receive each of the plurality of serialized input signals. The memory array is further configured to generate a plurality of serialized output signals. A de-serializer is configured to receive the plurality of serialized output signals and generate a non-serialized output signal. The plurality of serialized output signals each have a bit-width equal to second bit-width and the non-serialized output signal has a bit-width equal to the first bit-width.

A system includes a data storage medium comprising layers, an excitation circuit, and an emitter. Each layer comprises cells arranged in a horizontal plane. Cells in different layers are arranged in a vertical plane of the data storage medium. The excitation circuit excites a layer during excitation period. Exciting the layer changes an optical property of the layer during the excitation period. The emitter emits a first and a second beam onto a first and a second cell of the layer being excited during the excitation period to orient electrical charges within the first and the second cell to a first and second oriented values and their intensity to a first and second intensity values respectively. The first and second cells maintain the first and second oriented values and the first and second intensity values after the excitation period is over or in absence of the layer being excited.

A photonic quantum memory is provided. The photonic quantum memory includes entanglement basis conversion module configured to receive a first polarization-entangled photon pair and to produce a second entangled photon pair. The second polarization-entangled photon pair can be a time-bin entangled or a propagation direction-entangled photon pair. The photonic quantum memory further includes a photonic storage configured to receive the second entangled photon pair from the basis conversion module and to store the second entangled photon pair.

A system includes a data storage medium and a shockwave generator. The data storage medium includes cells and a plurality of layers. Each cell is configured to store information therein. At least two cells are arranged in a horizontal plane within a same layer of the plurality of layers of the data storage medium and at least two cells are arranged in a vertical plane in different layers of the plurality of layers of the data storage medium. The shockwave generator is configured to generate a shockwave signal that travels through a layer of the plurality of layers of the data storage medium. A target cell within the layer stores information responsive to a beam emitted from an emitter targeting the target cell as the shockwave signal is passing through the target cell. The target cell maintains the information after the shockwave signal exits through the target cell.

A system includes a data storage medium comprising layers, an excitation circuit, and an emitter. Each layer comprises cells arranged in a horizontal plane. Cells in different layers are arranged in a vertical plane of the data storage medium. The excitation circuit excites a layer during excitation period. Exciting the layer changes an optical property of the layer during the excitation period. The emitter emits a first and a second beam onto a first and a second cell of the layer being excited during the excitation period to orient electrical charges within the first and the second cell to a first and second oriented values and their intensity to a first and second intensity values respectively. The first and second cells maintain the first and second oriented values and the first and second intensity values after the excitation period is over or in absence of the layer being excited.

The system includes a data storage medium comprising cells, an excitation circuit, and an emitter. The cells arranged in a three dimensional space. The excitation circuit excites each cell independently. Exciting a cell changes an optical property of the cell. The emitter emits a first beam onto a first cell during a first excitation period to orient electrical charges within the first cell to a first oriented value and intensity of electric field to a first intensity value. The emitter emits a second beam onto a second cell during a second excitation period to orient electrical charges within the second cell to a second oriented value and intensity of electric field to a second intensity value. The first and second cells maintain the first and the second oriented values and the first and second intensity values after the first and second excitation periods are over, respectively.

Provided herein is an apparatus including a three dimensional crystalline structure including a number of storage locations. The storage locations are arranged in three dimensions within the crystalline structure. A light source is configured to focus a first light with a first energy on one of the storage locations in order to alter a characteristic of the storage location. The light source is further able to focus a second light with a second light energy on the storage location without altering the characteristic. A detector is provided to detect the second light energy.

Active photonic devices based on correlated perovskites are disclosed. Systems and methods using such active photonic devices are also disclosed. In one example, a smart window including an active photonic device is disclosed. In another example, a variable emissivity coating including an active photonic device is disclosed. In yet another example, an optical memory device including an active photonic device is disclosed. In a further example, an optical modulator including an active photonic device is disclosed. In an additional example, a tunable optical filter including an active photonic device is disclosed. In an additional example, a directional optical coupler including an active photonic device is disclosed.