A magneto-optical memory interface includes: a memory cell structure having multiple allocated magnetic recording cells, a selection means configured to select an individual or a predetermined number of the multiple allocated magnetic recording cells of the memory structure, and configured for an electronic signal to be applicable thereto; and a light irradiation part configured to irradiate the predetermined number of the multiple allocated magnetic memory cells with an optical signal, wherein each of the magnetic recording cells is a magnetic recording cell whose sensitivity to changes in a magnetization state thereof increases in response to an irradiation light from the light irradiation part, and each of the magnetic recording cells is a magnetic recording cell whose magnetization state changes in response to an applied electrical signal resulting from selection by the selection means and the irradiation light from the light irradiation part.

The present disclosure relates to a device and method for forming skyrmion in a magnetic thin film. A skyrmion forming method comprises aligning the surface of the magnetic thin film and a horizontal magnetic field to be applied to the magnetic thin film and applying the horizontal magnetic field and a vertical magnetic field to the magnetic thin film. Accordingly, it is possible to form the bubble skyrmion easily even in the case of a wide width of a stripe formed on the magnetic thin film.

An apparatus for novel technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser is provided. The apparatus comprises a terahertz writing head configured to generate a tunable terahertz writing signal and a memory cell including a spacer that comprises a thickness configured based on Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. The memory cell comprises two separate memory states: a first binary state and a second binary state; wherein the first binary memory state corresponds to a ferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a first thickness value of the spacer; and wherein the second binary memory state corresponds to an antiferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a second thickness value of the spacer. The thickness of the spacer is manipulated by the tunable terahertz writing signal.

The present disclosure relates to a device and method for forming skyrmion in a magnetic thin film. A skyrmion forming method comprises aligning the surface of the magnetic thin film and a horizontal magnetic field to be applied to the magnetic thin film and applying the horizontal magnetic field and a vertical magnetic field to the magnetic thin film. Accordingly, it is possible to form the bubble skyrmion easily even in the case of a wide width of a stripe formed on the magnetic thin film.

A magnetic property measuring system includes coil structures configured to apply a magnetic field to a sample, a light source configured to irradiate incident light to the sample, and a detector configured to detect polarization of light reflected from the sample. The magnetic field is perpendicular to a surface of the sample. Each coil structure includes a pole piece and a coil surrounding an outer circumferential surface of the pole piece. A wavelength of the incident light is equal to or less than about 580 nm.

A magnetic property measuring system includes coil structures configured to apply a magnetic field to a sample, a light source configured to irradiate incident light to the sample, and a detector configured to detect polarization of light reflected from the sample. The magnetic field is perpendicular to a surface of the sample. Each coil structure includes a pole piece and a coil surrounding an outer circumferential surface of the pole piece. A wavelength of the incident light is equal to or less than about 580 nm.

Methods include receiving a pattern to be searched in a memory having a plurality of sets of memory elements with each set coupled to a separate data line and corresponding to a same set of bit positions of the pattern. Methods further include receiving a pattern of data to be programmed into a memory, programming a first data state into one memory cell of each cell pair of a plurality of cell pairs of a memory array, and programing a second data state into another memory cell of each cell pair of the plurality of cell pairs for each bit position of the pattern. Memory configured to facilitate such methods include a plurality of cell pairs, each cell pair of the plurality of cell pairs programmed to store a same bit of data corresponding to a particular bit position of a pattern to be searched in the memory.

Methods include receiving a pattern to be searched in a memory having a plurality of sets of memory elements with each set coupled to a separate data line and corresponding to a same set of bit positions of the pattern. Methods further include receiving a pattern of data to be programmed into a memory, programming a first data state into one memory cell of each cell pair of a plurality of cell pairs of a memory array, and programing a second data state into another memory cell of each cell pair of the plurality of cell pairs for each bit position of the pattern. Memory configured to facilitate such methods include a plurality of cell pairs, each cell pair of the plurality of cell pairs programmed to store a same bit of data corresponding to a particular bit position of a pattern to be searched in the memory.

The Zeeman shift of electronic spins in nitrogen-vacancy (NV) centers in diamond has been exploited in lab-scale instruments for ultra-high-resolution, vector-based magnetic sensing. A quantum magnetometer in CMOS utilizing a diamond-nanocrystal layer with NVs or NV-doped bulk diamond on a chip-integrated system provides vector-based magnetic sensing in a compact package. The system performs two functions for the quantum magnetometry: (1) strong generation and efficient delivery of microwave for quantum-state control and (2) optical filtering/detection of spin-dependent fluorescence for quantum-state readout. The microwave delivery can be accomplished with a loop inductor or array of wires integrated into the chip below the nanodiamond layer or diamond. And the wire array can also suppress excitation light using a combination of plasmonic and (optionally) Talbot effects.

The Zeeman shift of electronic spins in nitrogen-vacancy (NV) centers in diamond has been exploited in lab-scale instruments for ultra-high-resolution, vector-based magnetic sensing. A quantum magnetometer in CMOS utilizing a diamond-nanocrystal layer with NVs or NV-doped bulk diamond on a chip-integrated system provides vector-based magnetic sensing in a compact package. The system performs two functions for the quantum magnetometry: (1) strong generation and efficient delivery of microwave for quantum-state control and (2) optical filtering/detection of spin-dependent fluorescence for quantum-state readout. The microwave delivery can be accomplished with a loop inductor or array of wires integrated into the chip below the nanodiamond layer or diamond. And the wire array can also suppress excitation light using a combination of plasmonic and (optionally) Talbot effects.