Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store data stored in the floating body under any one of a plurality of predetermined conditions. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory is described.

Embodiments of an improved memory architecture for processing data inside of a device are described. In some embodiments, the device can store neural network layers, such as a systolic flow engine, in non-volatile memory and/or a separate first memory. A processor of a host system can delegate the execution of a neural network to the device. Advantageously, neural network processing in the device can be scalable, with the ability to process large amounts of data.

Disclosed are methods, systems and devices for operation of memory device. In one aspect, volatile memory bitcells and non-volatile memory bitcells may be integrated to facilitate copying of memory states between the volatile and non-volatile memory bitcells.

A semiconductor memory cell and arrays of memory cells are provided In at least one embodiment, a memory cell includes a substrate having a top surface, the substrate having a first conductivity type selected from a p-type conductivity type and an n-type conductivity type; a first region having a second conductivity type selected from the p-type and n-type conductivity types, the second conductivity type being different from the first conductivity type, the first region being formed in the substrate and exposed at the top surface; a second region having the second conductivity type, the second region being formed in the substrate, spaced apart from the first region and exposed at the top surface; a buried layer in the substrate below the first and second regions, spaced apart from the first and second regions and having the second conductivity type; a body region formed between the first and second regions and the buried layer, the body region having the first conductivity type; a gate positioned between the first and second regions and above the top surface; and a nonvolatile memory configured to store data upon transfer from the body region.

A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.

Systems and methods are disclosed including a first memory component, a second memory component having a lower access latency than the first memory component and acting as a cache for the first memory component, and a processing device operatively coupled to the first and second memory components. The processing device can perform operations including receiving a data access operation and, responsive to determining that a data structure includes an indication of an outstanding data transfer of data associated with a physical address of the data access operation, determining whether an operation to copy the data, associated with the physical address, from the first memory component to the second memory component is scheduled to be executed. The processing device can further perform operations including determining to delay a scheduling of an execution of the data access operation until the operation to copy the data is executed.

Systems and methods are disclosed including a processing device operatively coupled to a first and a second memory device. The processing device can receive a set of data access requests, from a host system, in a first order and execute the set of data access requests in a second order. The processing device can further identify a late data access request of the set of data access requests and determine whether a data structure in a local memory associated with the processing device includes a previous outstanding data access request corresponding to an address associated with the late data access request. Responsive to determining that the data structure includes an indication of a previous outstanding data access request corresponding to the address associated with the late data access request, identifying a type of data dependency associated with the previous outstanding data access request and performing one or more operations associated with the type of data dependency.

Embodiments of an improved memory architecture by processing data inside of the memory device are described. In some embodiments, the memory device can store neural network layers, such as a systolic flow engine, in non-volatile memory and/or a separate DRAM memory. Central processing unit (CPU) of a host system can delegate the execution of a neural network to the memory device. Advantageously, neural network processing in the memory device can be scalable, with the ability to process large amounts of data.

A memory storage device includes: a memory array for generating a cell current dependent to an input and transconductance of memory cells of the memory array; a reference array for generating a reference current; an ADC for performing analog-digital-conversion on the cell current based on the reference current to generate a digital output; and a memory controller for generating an output based on the input and the digital output of the ADC. The output of the memory controller indicates an inner product of the input and a weight, the weight including a positive weight and a negative weight. The positive weight is implemented by the transconductance of the memory cells of the memory array. The negative weight is implemented by transconductance of reference cells of the reference array or implemented by a shifting number of a shifter in the memory controller.

Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store data stored in the floating body under any one of a plurality of predetermined conditions. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory is described.