G11C17/10

Multi-Level Distributed Pattern Processor

A multi-level distributed pattern processor comprises a plurality of storage-processing units (SPU's). Each of the SPU's comprises at least a non-volatile memory (NVM) array and a pattern-processing circuit. The NVM array and the pattern-processing circuit are disposed on different physical levels.

Configurable computing array package based on printed memory

The present invention discloses a new type of configurable gate arraya configurable computing array package. It comprises at least a configurable computing die and a configurable logic die. The configurable computing die comprises at least one configurable computing element. The configurable computing element can selectively realize a basic function from a math library. It comprises a plurality of printed arrays for storing the look-up tables (LUT) for different basic functions. The configurable computing die and the configurable logic die are located in a same package.

Configurable computing array package based on printed memory

The present invention discloses a new type of configurable gate arraya configurable computing array package. It comprises at least a configurable computing die and a configurable logic die. The configurable computing die comprises at least one configurable computing element. The configurable computing element can selectively realize a basic function from a math library. It comprises a plurality of printed arrays for storing the look-up tables (LUT) for different basic functions. The configurable computing die and the configurable logic die are located in a same package.

NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
20190131311 · 2019-05-02 ·

A nonvolatile semiconductor storage device includes a plurality of cell transistor pairs including a pair of cell transistors sharing a first node connected to a bit line or a source line, and a dummy gate line laid in parallel with gate lines of the cell transistors, the dummy gate line applying an off voltage to a dummy transistor between the cell transistor pairs. The gate lines and the dummy gate line may be laid at equal intervals. A plurality of impurity diffusion layers corresponding to the first node and second nodes of the cell transistors may be formed at equal intervals in a continuous active region.

Configurable computing array based on three-dimensional printed memory

The present invention discloses a configurable computing array based on three-dimensional printed memory (3D-P). It comprises an array of configurable computing elements, an array of configurable logic elements and a plurality of configurable interconnects. Each configurable computing element can selectively realize a basic function in a math library. It comprises a plurality of 3D-P arrays storing the look-up tables (LUT) for the basic functions in the math library.

Configurable computing array based on three-dimensional printed memory

The present invention discloses a configurable computing array based on three-dimensional printed memory (3D-P). It comprises an array of configurable computing elements, an array of configurable logic elements and a plurality of configurable interconnects. Each configurable computing element can selectively realize a basic function in a math library. It comprises a plurality of 3D-P arrays storing the look-up tables (LUT) for the basic functions in the math library.

Configurable computing array die based on printed memory and two-sided integration

The present invention discloses a new type of configurable gate arraya configurable computing array die based on two-sided integration. It is a monolithic die and comprises at least a configurable computing element and a configurable logic element formed on different sides of a semiconductor substrate. Each configurable computing element can selectively realize a basic function from a math library. It comprises a plurality of printed arrays for storing the look-up tables (LUT) for different basic functions.

Configurable computing array die based on printed memory and two-sided integration

The present invention discloses a new type of configurable gate arraya configurable computing array die based on two-sided integration. It is a monolithic die and comprises at least a configurable computing element and a configurable logic element formed on different sides of a semiconductor substrate. Each configurable computing element can selectively realize a basic function from a math library. It comprises a plurality of printed arrays for storing the look-up tables (LUT) for different basic functions.

Data Storage with In-situ String-Searching Capabilities Comprising Three-Dimensional Vertical One-Time-Programmable Memory
20180268900 · 2018-09-20 · ·

A preferred data storage with in-situ string-searching capabilities comprises a plurality of storage-processing units (SPU), with each SPU comprising at least a three-dimensional vertical one-time-programmable memory (3D-OTP.sub.V) array vertically stacked above a pattern-processing circuit. The 3D-OTP.sub.V array stores at least a portion of big data. A search string from the input is sent to all SPUs, which perform string searching simultaneously.

Configurable Computing Array Based on Three-Dimensional Printed Memory
20180212606 · 2018-07-26 · ·

The present invention discloses a configurable computing array based on three-dimensional printed memory (3D-P). It comprises an array of configurable computing elements, an array of configurable logic elements and a plurality of configurable interconnects. Each configurable computing element can selectively realize a basic function in a math library. It comprises a plurality of 3D-P arrays storing the look-up tables (LUT) for the basic functions in the math library.