Techniques and circuitry are disclosed for efficiently implementing programmable memory array circuit architectures, including both non-volatile and volatile memories. The memory circuitry employs an antifuse scheme that includes an array of 1 T bitcells, wherein each bitcell effectively contains one gate or transistor-like device that provides both an antifuse element and a selector device for that bitcell. In particular, the bitcell device has asymmetric trench-based source/drain contacts such that one contact forms a capacitor in conjunction with the spacer and gate metal, and the other contact forms a diode in conjunction with a doped diffusion area and the gate metal. The capacitor serves as the antifuse element of the bitcell, and can be programmed by breaking down the spacer. The diode effectively provides a Schottky junction that serves as a selector device which can eliminate program and read disturbs from bitcells sharing the same bitline/wordline.

The present invention discloses a processor for enhancing network security, i.e. a three-dimensional (3-D) security processor. It is a monolithic integrated circuit comprising a plurality of storage-processing units (SPU). Each SPU comprises at least a three-dimensional memory (3D-M) array for permanently storing rule/virus patterns and a pattern-processing circuit for performing pattern processing on an incoming network packet against said rule/virus patterns. The 3D-M array is stacked above the pattern-processing circuit.

The present invention discloses a processor for enhancing computer security, i.e. a three-dimensional (3-D) security processor. It is a monolithic integrated circuit comprising a plurality of storage-processing units (SPU). Each SPU comprises at least a three-dimensional memory (3D-M) array for permanently storing virus patterns and a pattern-processing circuit for performing pattern processing on a scanned computer data against said virus patterns. The 3D-M array is stacked above the pattern-processing circuit.

An integrated circuit (IC) device configured for multiple return material authorizations (RMAs) is provided. The IC device includes an asset and a return material authorization (RMA) counter fuse including a first fuse, a second fuse, and a third fuse. The IC device enters an RMA state in response to blowing the first fuse, a second state in response to blowing the second fuse, and the RMA state in response to blowing the third fuse.

A light-erasable embedded memory device and a method for manufacturing the same are provided in the present invention. The light-erasable embedded memory device includes a substrate with a memory region and a core circuit region, a floating gate on the memory region of the substrate, at least two light-absorbing films above the floating gate, wherein each light-absorbing film is provided with at least one dummy via hole overlapping the floating gate, and a dielectric layer on each light-absorbing film and filling up the dummy via holes.

The present invention discloses a distributed pattern processor. The distributed pattern processor not only stores patterns permanently, but also processes them using massive parallelism. It comprises a plurality of storage-processing units (SPU), with each SPU comprising a pattern-processing circuit and at least a three-dimensional memory (3D-M) array storing at least a pattern. The 3D-M array is vertically stacked above the pattern-processing circuit.

The present invention discloses a configurable gate array based on three-dimensional printed memory (3D-P). It comprises an array of configurable computing elements, an array of configurable logic elements and a plurality of configurable interconnects. Each configurable computing element can selectively realize a math function from a math library. It comprises a plurality of 3D-P arrays storing the look-up tables (LUT) for the math functions in the math library.

A fuse block unit includes a share flip-flop. The share flip-flop includes a first switch element, a second switch element, a third switch element, a fourth switch element, a first latch, and a second latch. The first switch element selectively couples a first laser latch to a first node according to the first load voltage. The second switch element selectively couples a second laser latch to the first node according to the second load voltage. The third switch element selectively couples an input node to the first node according to the inverted shift voltage. The first latch is coupled between the first node and a second node. The fourth switch element selectively couples the second node to a third node according to the shift voltage. The second latch is coupled between the third node and an output node.

A semiconductor apparatus includes a memory region; a fuse array including a plurality of fuse groups, each fuse group being configured to store a failed address of the memory region; a remaining-fuse information storage unit configured to store remaining-fuse information on a fuse group that includes a fuse corresponding to the failed address among the plurality of fuse groups; and a control unit configured to perform a control operation for updating the remaining-fuse information for the fuse group that includes a fuse corresponding to the failed address among the plurality of fuse groups and for storing the failed address when the failed address is detected.

Provided is a semiconductor device and a manufacturing method thereof. The semiconductor device may include a first cell array, a first fuse circuit, a first spare cell array, a second spare cell array, and a redundancy select controller. The first fuse circuit may be configured to store a first failed address corresponding to one or more defective memory cells in the first cell array. Each of the first and second spare cell arrays may include a plurality of spare memory cells configured to replace first and second defective memory cells in the first cell array, respectively. For replacing the first and second defective memory cells, the redundancy select controller may be configured to selectively assign the first fuse circuit to either one or both of the first and second spare cell arrays.