A memory circuit device includes multiple memory cells that are each constituted of a resistive memory element, a write circuit unit that is configured to write data to any one of the memory cells which is designated by cell designating information, and a read circuit unit that is configured to read out, from the memory cell designated by the cell designating information, data written in the memory cell. The memory circuit device has a configuration including a selection circuit unit that is shared by both of the write circuit unit and the read circuit unit and configured to select a memory cell to be activated from the multiple memory cells based on the cell designating information, and a control circuit unit that is configured to selectively enable any one of writing of data by the write circuit unit and reading of data by the read circuit unit with respect to the memory cell selected by the selection circuit unit.

According to one embodiment, a magnetic memory device includes an element unit and a controller. The element unit includes a magnetic member, a first magnetic layer, a second magnetic layer, an intermediate layer, and a non-magnetic layer. The magnetic member includes a first region, a first portion, and a second portion. The first region is provided between the first portion and the second portion, or included in the first portion. The first magnetic layer is apart from the first region in a first direction. The second magnetic layer is provided between the first region and the first magnetic layer. The intermediate layer is provided between the first magnetic layer and the second magnetic layer. The intermediate layer is non-magnetic. The non-magnetic layer is connected with the first region. The controller is configured to supply a writing current and a shift current to the element unit.

A storage unit includes a U-shaped magnetic track, a first drive circuit, a second drive circuit, a first drive port, and a second drive port. The U-shaped magnetic track includes a first port, a second port, a first storage area, and a second storage area. By controlling input voltages of the first port, the second port, the first drive port, and the second drive port and driving the first drive circuit, a current pulse is generated in the first storage area, and a magnetic domain wall in the first storage area is driven to move. By controlling the input voltages of the first port, the second port, the first drive port, and the second drive port and driving the second drive circuit, a current pulse is generated in the second storage area, and a magnetic domain in the second storage area is driven to move.

A device for data storage and processing includes: at least two input racetrack elements having a plurality of first magnetization regions; at least one output racetrack element having a plurality of second magnetization regions, wherein a magnetization vector is adapted to switch from a first direction to the opposite one, or vice versa, by way of a magnetic field of reduced intensity compared with a magnetic field required to produce a similar switching of a magnetization vector of the first magnetization region, wherein the input racetrack elements and output racetrack element are configured in such a way as to constitute at least one elementary logic gate, wherein at least two of the first magnetization regions are magnetically coupled to at least one of the second magnetization regions.

A magnetic domain wall (MDW) motion device. The MDW motion device may include a ferromagnetic layer with perpendicular magnetic anisotropy and non-magnetic metal layers extending parallel to and in contact with the ferromagnetic layer. The ferromagnetic layer may include first ferromagnetic regions, which are arranged in an extension direction of the ferromagnetic layer, and second ferromagnetic regions, which are provided between an adjacent pair of the first ferromagnetic regions. The first and second ferromagnetic regions may have spin torque coefficients of opposite signs, and an MDW positioned near an interface between the first and second ferromagnetic regions may be moved by an in-plane current flowing through the non-magnetic metal layer.

The present invention relates to a data storage system and a method which has high storing capacity and high data access rate and low power consumption. The said data storage system essentially includes at least two optical layers, and which have at least one active layer in which the light is generated, at least one lower electric contact enabling the electric energy to be transferred to the active layer and at least one upper electric contact, at least two reflecting layers reflecting the light generated in the active layer; at least one thermal insulator; at least one magnetic layer, which has at least one storage bit, at least one lower buffer bit, at least one upper buffer bit enabling the data to be transferred up; at least one transparent layer and transfers the light generated by the optical unit to the magnetic layer.

According to the embodiment, a magnetic memory device includes a magnetic body. The magnetic body includes first and second extending regions, and a first connecting region. The first extending region spreads along a first direction and along a second direction crossing the first direction, and includes first and second end portions extending in the first direction. The second end portion is separated from the first end portion in the second direction. The second extending region spreads along the first direction and along a third direction crossing the first direction, and includes third and fourth end portions extending in the first direction. The fourth end portion is separated from the third end portion in the third direction. The first connecting region is provided between the first and third end portions, and connects the first end portion with the third end portion.

According to one embodiment, a memory system includes a shift register memory and a controller. The shift register memory includes data storing shift strings. The controller changes a shift pulse, which is to be applied to the data storing shift strings from which first data is read by applying a first shift pulse, to a second shift pulse to write second data to the data storing shift strings and to read the second data from the data storing shift strings. The controller creates likelihood information of data read from the data storing shift strings in accordance with a read result of the second data. The controller performs soft decision decoding for the first data using the likelihood information.

A memory circuit device includes multiple memory cells that are each constituted of a resistive memory element; a write circuit unit that is configured to write data to any one of the memory cells which is designated by cell designating information, and a read circuit unit that is configured to read out, from the memory cell designated by the cell designating information, data written in the memory cell. The memory circuit device has a configuration including a selection circuit unit that is shared by both of the write circuit unit and the read circuit unit and configured to select a memory cell to be activated from the multiple memory cells based on cell designating information, and a control circuit unit that is configured to selectively enable any one of writing of data by the write circuit unit and reading of data by the read circuit unit with respect to the memory cell selected by the selection circuit unit.

A magnetic memory device includes a reading unit on a substrate, a magnetic track layer on the reading unit, the magnetic track layer including a bottom portion between first and second sidewall portions, and a mold structure on the bottom portion of the magnetic track layer, and between the first and second sidewall portions. The mold structure includes first and second mold layers alternately arranged in a first direction perpendicular to a top surface of the substrate, and the magnetic track layer includes magnetic domains and magnetic domain walls between magnetic domains, the first and second sidewall portions of the magnetic track layer including sidewall notches corresponding to the magnetic domain walls, and the bottom portion includes a bottom notch corresponding to one of the magnetic domain walls.