According to an embodiment, a semiconductor device includes a plurality of first interconnections, a plurality of gate dielectric films, and a plurality of second interconnections. The plurality of first interconnections are oxide semiconductors formed in parallel at predetermined intervals in a first direction. The plurality of gate dielectric films are formed on surfaces of the first interconnections, respectively. The plurality of second interconnections are conductors formed at predetermined intervals in parallel to a second direction orthogonal to the first direction, respectively, to bridge over the gate dielectric films.

A field effect transistor, a memory element, and a manufacturing method of a charge storage structure are provided. The memory element includes a plurality of field effect transistors, and each of the field effect transistors includes a substrate, a source region, a drain region, a gate conductive layer, and a charge storage structure. Both the source region and the drain region are located in the substrate and connected to an upper surface of the substrate. The source and drain regions are spaced apart from each other to define a channel region therebetween. The gate conductive layer is disposed over the upper surface and overlaps with the channel region. The charge storage structure disposed between the gate conductive layer and the channel region includes a ferroelectric material and a paraelectric material so that the charge storage structure has better capability of trapping charges and a higher switching speed.

Digital circuits, and other types of circuits, may be implemented using improved charge domain techniques based on modern silicon processing compatible with standard digital flows. An example of technology that can be used for charge domain digital flows are FINs (as used in FinFET) which can be modified to produce charge domain shift registers and charge domain digital logic. Also, novel notch based implementations which overcome limited potential range, speed, complex clocking and density issues of older generations of charge domain technology may be disclsoed. Such implementations can significantly improve performance, density and reduce power consumption of charge domain digital circuits, with the proper implants and process modifications.

A charge-coupled device (CCD) image sensor is provided. The CCD image sensor may include an array of photosensors that transfer charge to multiple vertical CCD shift registers, which then in turn transfer the charge to a horizontal CCD shift register. The horizontal CCD shift register then feeds an output buffer circuit. The output buffer circuit can include multiple output stages, each of which can include a source-follower transistor coupled in series with a current sink transistor and at least one cascode transistor. The current sink transistor may have its gate terminal shorted to ground. In one arrangement, the cascode transistor has a gate terminal that receives a non-zero bias voltage. In another arrangement, the cascode transistor has a gate terminal that is also shorted to ground and operates in depletion mode.

In some embodiments, a programmable circuit configured to store a shift setting for a mode register parameter, and a shift circuit is configured to receive a first value of a mode register parameter. In response to the shift setting signal having a first value, the shift circuit is configured to adjust the first value of the mode register parameter to provide the mode register parameter having a second value. In response to the shift setting signal having a second value, the shift circuit is further configured to provide the first value of the mode register parameter as the second value of the mode register parameter. Circuitry coupled to an input/output terminal is configured to set a configuration based on the second value of the mode register parameter. The mode register parameter includes an on-die termination (ODT) parameter and the circuitry includes an ODT circuit, in some examples.