A memory device includes a memory cell array, a page buffer circuit, and a counting circuit. The page buffer circuit includes a first and second page buffer columns connected to the memory cell array. The first page buffer column includes a first page buffer unit and the second page buffer column includes a second page buffer unit in a first stage. The first page buffer unit performs a first sensing operation in response to a first sensing signal, and the second page buffer unit performs a second sensing operation in response to a second sensing signal. The counting circuit counts a first number of memory cells included in a first threshold voltage region from a result of the first sensing operation, and counts a second number of memory cells included in a second threshold voltage region from a result of the second sensing operation.

A method for operating a host device and a memory device, and a vehicle including the host device and the memory device are provided. The method for operating a host device includes detecting a need for an EOM (Eye Open Monitor) operation, transmitting a command for requesting the EOM operation to a memory device in response to the detection of the need to perform the EOM operation, and receiving a response signal including changed preset information from the memory device.

A memory device includes a memory cell array configured to store data; and a data output circuit configured to transmit status data to an external device through at least one data line in a latency period in response to a read enable signal received from the external device and transmit the data read from the memory cell array to the external device through the at least one data line in a period subsequent to the latency period.

A technique includes determining, via an analog circuit, where an access rate of a memory row associated with a memory device exceeds a threshold. In various examples, upon a determination that the access rate exceeds the threshold, the technique may further comprise generating an alert to indicate possible corruption of data stored in an adjacent row to the memory row.

A semiconductor system includes a first semiconductor chip, a second semiconductor chip stacked above the first semiconductor chip, a controller configured to control the first and second semiconductor chips, a first wiring connected between the controller and each of the first and second semiconductor chips and by which a first signal is to be transmitted from the controller to each of the first and second semiconductor chips, a second wiring connected between the controller and the first semiconductor chip and by which a current of the first signal flowing through the first wiring to the first semiconductor chip is to be returned to the controller, and a third wiring connected between the controller and the second semiconductor chip and by which a current of the first signal flowing through the first wiring to the second semiconductor chip is to be returned to the controller.

A method for performing read training of a memory channel includes writing a data pattern to a memory using a data bus having a predetermined number of bit lanes. An edge of a read data eye is determined individually for each bit lane by reading the data pattern over the data bus using a read bust cycle having a predetermined length, grouping data received on each bit lane over the read burst cycle to form a bit lane data group, and comparing the bit lane data group to corresponding expected data of the data pattern for each bit lane, logging a phase of each bit lane on which said edge is found, and repeating the reading, grouping, comparing, and logging until the edge is found for all of the bit lanes.

A memory temperature controlling method and a memory temperature controlling system are provided. The method includes: performing, by a testing equipment, test modes on a memory storage device, and obtaining a first internal temperature of a memory control circuit unit, a second internal temperature of each memory package and a surface temperature of each memory package to establish a linear relationship expression of the first internal temperature, the second internal temperature and the surface temperature; using, by the memory storage device, the linear relationship expression to calculate a predicted surface temperature of a rewritable non-volatile memory based on a first current internal temperature of the memory control circuit unit and a second current internal temperature of each memory package; adjusting, by the memory storage device, an operating frequency for accessing the rewritable non-volatile memory based on the predicted surface temperature.

A memory system includes memory chips connected to each other. Each of the memory chips includes a memory array, a read/write data strobe pin, a look-up table storage device, a chip number identification circuit, and a control logic circuit. The memory array stores data. The read/write data strobe pin is connected to read/write data strobe pins of other memory chips. The look-up table storage device stores a plurality of trimming shift values related to a number of chip connections in advance. The chip number identification circuit identifies a current number of chip connections according to a state information, and finds a selected trimming shift value from the look-up table storage device. The control logic circuit transmits a data signal in response to a clock signal, and adjusts a setup hold time between the clock signal and the data signal according to the selected trimming shift value.

A signal modulation apparatus, a memory storage apparatus, and a signal modulation method are disclosed. The signal modulation apparatus includes an observation circuit, a signal modulation circuit, and a phase control circuit. The signal modulation circuit is configured to generate a second signal according to a first signal and a reference clock signal. A frequency of the first signal is different from a frequency of the second signal. The phase control circuit is configured to obtain an observation information via the observation circuit. The observation information reflects a process variation of at least one electronic component in the signal modulation apparatus. The phase control circuit is further configured to control an offset between the first signal and the reference clock signal according to the observation information.

Methods, systems, and devices for monitoring and adjusting access operations at a memory device are described to support integrating monitors or sensors for detecting memory device health issues, such as those resulting from device access or wear. The monitoring may include traffic monitoring of access operations performed at various components of the memory device, or may include sensors that may measure parameters of components of the memory device to detect wear. The traffic monitoring or the parameters measured by the sensors may be represented by a metric related to access operations for the memory device. The memory device may use the metric (e.g., along with a threshold) to determine whether to adjust a parameter associated with performing access operations received by the memory device, in order to implement a corrective action.