The RC sensor circuit includes a driver circuit that includes an output configured to drive the RC sensor circuit to a drive voltage using a representative copy of a current that drives an electronic circuit line. The RC sensor circuit includes an integration capacitor. The integration capacitor is configured to integrate the representative copy of the current over a first time period to generate a first representative voltage and over a second time period to generate a second representative voltage. The RC sensor circuit includes a sampling circuit coupled to the integration capacitor. The sampling circuit is configured to determine a first sample voltage by sampling the first representative voltage and a second sample voltage by sampling the second representative voltage. A ratio of the first sample voltage and the second sample voltage is indicative of an RC time constant of the electronic circuit line.

A resistor-capacitor (RC) sensor circuit of an electronic device is driven to a drive voltage using a representative copy of a current that drives an electronic circuit line of the electronic device. The RC sensor circuit is to sample voltages that are indicative of an RC time constant of the electronic circuit line. A first sample voltage is determined by sampling a first representative voltage generated at the RC sensor circuit by driving the RC sensor circuit with the representative copy of the current over a first time period. A second sample voltage is determined by sampling a second representative voltage generated at the RC sensor circuit by driving the RC sensor circuit with the representative copy of the current over a second time period. A ratio of the first sample voltage and the second sample voltage is indicative of the RC time constant of the electronic circuit line.

A memory device includes a memory cell array including a plurality of memory cells connected to a plurality of wordlines and a plurality of bitlines, a wordline driving circuit including a plurality of sub-wordline decoders respectively connected to the plurality of wordlines, wherein each of the sub-wordline decoders is configured to input a first driving signal to the respectively connected wordline when the wordline is selected, and wherein each sub-wordline decoder is configured to input a predetermined power supply voltage to the respectively connected wordline when the wordline is unselected, The memory device may include a sense amplifier circuit including sense amplifiers connected to the bitlines, and a logic circuit configured to determine a failure of at least one of the memory cell array and the wordline driving circuit.

A parallel test device is provided. The parallel test device of the disclosure includes an I/O pad, a plurality of input buffers, and a plurality of output drivers. The I/O pad is configured to perform input/output operations in the parallel test device. The input buffers are configured to enable write data. The output drivers are configured to enable read data and output the read data to the I/O pad. A test signal corresponds to the data from an external device is transferred to the output drivers through the I/O pad in the parallel test device during a test mode.

A system including a user interface, a memory, and a processor configured to perform operations including receiving memory scrambling information including address scrambling information and data scrambling information, and associating one or more address bus bits of a plurality of address bus bits with an address grouping of a plurality of address groupings based on the address scrambling information is disclosed. In an embodiment, the address grouping corresponds to at least one address segment of a plurality of address segments. The operations include determining an error correction code for the at least one address segment that includes one or more address check bits. The operations include generating a physical layout of memory components based on the memory scrambling information. The memory components include at least one of the plurality of address bus bits, and the one or more address check bits.

A memory device, includes: a memory array comprising a plurality of bit cells arranged along a plurality of rows and along a plurality of columns, respectively; and a control logic circuit coupled to the memory array, and configured to determine respective locations of a first plurality of diagonal bit cells of the memory array for testing one or more peripheral circuits coupled to the memory array, wherein the control logic circuit is further configured to determine respective locations of at least a second plurality of diagonal bit cells of the memory array for testing the one or more peripheral circuits, wherein a number of the plurality of rows is different than a number of the plurality of columns and the first plurality of diagonal bit cells span a first equal number of rows and columns and the second plurality of diagonal bit cells also span a second equal number of rows and columns.

A method for detecting a writing error of a datum in memory includes: storing at least two parts of equal size of a binary word representative of said datum at the same address in at least two identical memory circuits, and comparing internal control signals of the two memory circuits to determine existence of the writing error.

Disclosed is a semiconductor memory device. The semiconductor memory device may include: a memory cell array; and a cache latch circuit configured to exchange data with the memory cell array through a plurality of bit lines extended in a second direction crossing a first direction, and comprising a plurality of cache latches arranged in a plurality of column in the first direction and in a plurality of rows in the second direction. Each of the cache latches may be coupled to any one of a plurality of input/output (IO) pins. Cache latches coupled to the IO pins at the same time may constitute one IO cache latch unit. The cache latches included in the one IO cache latch unit may be arranged in 22 array units.

A one-time programmable (OTP) memory device including: a cell array circuit including an OTP cell array and dummy cell block, the OTP cell array includes OTP memory cells coupled to bit-lines, read word-lines and voltage word-lines and the dummy cell block is coupled to the read word-lines and voltage word-lines; a row decoder coupled to the dummy cell block and the OTP cell array through the read word-lines and voltage word-lines; a column decoder coupled to the OTP cell array through the bit-lines; a write-sensing circuit coupled to the column decoder; and a control circuit to control the cell array circuit, row decoder and write-sensing circuit based on a command and address, the cell array circuit further includes an isolation circuit to cut off first and second voltages which are transferred to the OTP cell array from the row decoder, in response to control codes in a test mode.

An exemplary memory includes a memory cell array configured to store a plurality of data bits each associated with a respective column plane, and an input/output circuit including a compression circuit configured to provide error data based on a comparison between a bit of the plurality of data bits received from the memory cell array and an expected value and based on a respective column plane of the memory cell array with which the bit is associated. The compression circuit is further configured to encode a column plane error code based on the error data for provision to a data terminal.