An integrated circuit comprises a set of processor cores, wherein each processor core of the set of processor cores includes BIST logic circuitry and multiple memory blocks coupled to the BIST logic circuitry. Each processor core further includes multiple power control circuitry, where each power control circuitry of the multiple power control circuitry is coupled to a respective processor core of the set of processor cores, multiple isolation circuitry, where each isolation circuitry of the multiple isolation circuitry is coupled to a respective processor core of the set of processor cores, a built-in-self repair (BISR) controller coupled to the each of the set of processor cores, each of the multiple power control circuitry, and each of the multiple isolation circuitry, and a safety controller coupled to the BISR controller, the multiple power control circuitry, and to the multiple isolation circuitry.

A semiconductor device including an SRAM capable of sensing a defective memory cell that does not satisfy desired characteristics is provided. The semiconductor device includes a memory cell, a bit line pair being coupled to the memory cell and having a voltage changed towards a power-supply voltage and a ground voltage in accordance with data of the memory cell in a read mode, and a specifying circuit for specifying a bit line out of the bit line pair. In the semiconductor device, a wiring capacitance is coupled to the bit line specified by the specifying circuit and a voltage of the specified bit line is set to a voltage between a power voltage and a ground voltage in a test mode.

A communication apparatus comprises a CAM, an action determination unit, and a CAM diagnosis unit. The CAM includes, a plurality of entries each storing therein at least a portion of header information of frame, and a search circuit for each entry configured to determine whether or not a search key matches data stored at the entry. The search key is correlated with information indicating whether or not an entry matching the search key and an expected value of a search result including identification information of an entry matching the search key. The CAM diagnosis unit causes the CAM to search for an entry matching the search key. The CAM diagnosis unit diagnoses a failure occurring at the search circuit of an entry to be the test object when the result of the search does not match the expected value of a search result correlated to the search key.

A memory-testing circuit configured to perform a test of reference bits in a memory. In a read operation, outputs of data bit columns are compared with one or more reference bit columns. The memory-testing circuit comprises: a test controller and association adjustment circuitry configurable by the test controller to associate another one or more reference bit columns or one or more data bit columns with the data bit columns in the read operation. The test controller can determine whether the original one or more reference bit columns have a defect based on results from the two different association.

A shift register circuit generates a clock enable signal in response to a start signal and in response to a clock signal. The shift register circuit generates multiple pulses in the clock enable signal in response to a single transition in the start signal and in response to control signals having values that indicate to generate more than one pulse in the clock enable signal. A multiplexer circuit provides an output signal for testing an electronic circuit based on an input signal or based on the clock signal in response to the clock enable signal.

A method and apparatus for continuous write and read operations during memory testing. The method comprises: controlling a signal generator; triggering a write address and a data field operation each memory cycle; triggering a write signal to write to a memory each memory clock cycle; and reading a read address and a read data operation to the memory. An additional embodiment provides an apparatus for advanced memory latency testing. The apparatus includes a data generator trigger in communication with a signal generator and an address generator trigger also in communication with the signal generator.

In a processor or the like including a reconfigurable (RC) circuit, the RC circuit is used to form a test circuit to test a core, a cache memory, or the like, and then part of the RC circuit is used as an auxiliary cache memory. When a memory can store data after stop of power supply, a startup routine program (SRP) of the processor can be stored therein. For example, after the test, an SRP is loaded to a memory in the RC circuit from an external ROM or the like, and when power is resupplied to the processor, a startup operation is performed using the loaded SRP. When the processor is in a normal operation state, this memory is used as an auxiliary cache memory and the SRP is overwritten. The SRP is loaded to the memory again at the end of use of the processor.

A memory system includes a plurality of memory devices having respective arrays of memory cells therein, a bus electrically coupled to and shared by the plurality of memory devices, and a memory controller. The memory controller, which is electrically coupled to the bus, includes a built-in self-test (BIST) circuit, which is commonly connected to the plurality of memory devices. The BIST circuit is configured to transfer a command set including a test pattern to the plurality of memory devices via the bus, and transfer a command trigger signal for driving the test pattern to the plurality of memory devices via the bus.

An integrated circuit includes a built-in-self-test circuit that generates output test signals and a circuit tested by the built-in-self-test circuit. The circuit tested by the built-in-self-test circuit generates test results in response to the output test signals during a test. Pipeline register circuits are coupled together to form a signal path for transmitting the output test signals from the built-in-self-test circuit to the circuit tested by the built-in-self-test circuit. A functional circuit block is located in a reserved die area of the integrated circuit. The signal path is routed around the reserved die area to the circuit tested by the built-in-self-test circuit. At least a subset of the pipeline register circuits are located adjacent to at least two sides of the reserved die area.

The present invention relates to a method of validating a memory device. The method includes validating a second memory device based on one or more first microcode instructions stored in a validated predetermined part of a first memory device to detect the operational status of the second memory device. Further, the method includes receiving one or more second microcode instructions upon validating the second memory device. Finally, validating the first memory device based on the one or more second microcode instructions stored in the second memory device to detect the operational status of the first memory device.