An integrated circuit test apparatus includes: a first test unit configured to output a current for a built-in self test (BIST) progress state for each internal circuit of an integrated circuit in a BIST test mode and to determine whether each internal circuit operates normally in a wake-up mode of the integrated circuit; and a first determination module configured to determine whether each internal circuit is in a stuck state based on a change detected by the first test unit.

Example embodiments provide for a storage device that includes a storage controller including a plurality of analog circuits and at least one nonvolatile memory device including a first region and a second region. The at least one nonvolatile memory device stores user data in the second region and stores trimming control codes in the first region as a compensation data set. The trimming control codes are configured to compensate for offsets of the plurality of analog circuits and are obtained through a wafer-level test on the storage controller. The storage controller, during a power-up sequence, reads the compensation data set from the first region of the at least one nonvolatile memory device, stores the read compensation data set therein, and adjusts the offsets of the plurality of analog circuits based on the stored compensation data set.

The present disclosure provides a defect inspecting method and a defect inspecting system configured to inspect a memory device. The defect inspecting method includes the operations of: resetting the memory device from a power on state; initializing the memory device; performing a plurality of write operations to a memory cell array of the memory device according to a test pattern; performing a plurality of read operations to the memory cell array of the memory cell to generate a readout pattern; and determining whether a defect existed in the memory device according to the readout pattern.

Methods, systems, and devices supporting an auto-power on mode for biased testing of a power management integrated circuit (PMIC) are described. A system may program a PMIC of a memory system to a specific mode. The mode may cause the PMIC to apply a bias to a memory device of the memory system upon receiving power and independent of a command to apply the bias to the memory device. The system may transmit power to the memory system while controlling one or more operating conditions (e.g., temperature, humidity) for a threshold time. The PMIC may apply a bias to the memory device during the threshold time based on the PMIC being programmed to the mode and the transmitted power. The system may identify a capability or defect of the memory device resulting from transmitting the power to the memory system while controlling the operating conditions for the threshold time.

An Integrated Circuit (IC) includes a non-volatile memory (NVM) and secure power-up circuitry. The NVM is configured to store an operational state of the IC. The secure power-up circuitry is configured to (i) during a power-up sequence of the IC, perform a first readout of the operational state from the NVM while a supply voltage of the IC is within a first voltage range, (ii) if the operational state read from the NVM in the first readout is a state that permits access to a sensitive resource of the IC, verify that the supply voltage is within a second voltage range, more stringent than the first voltage range, and then perform a second readout of the operational state from the NVM, and (iii) initiate a responsive action in response to a discrepancy between the operational states read from the NVM in the first readout and in the second readout.

A memory system includes memory chips connected to each other. Each of the memory chips includes a memory array, a read/write data strobe pin, a look-up table storage device, a chip number identification circuit, and a control logic circuit. The memory array stores data. The read/write data strobe pin is connected to read/write data strobe pins of other memory chips. The look-up table storage device stores a plurality of trimming shift values related to a number of chip connections in advance. The chip number identification circuit identifies a current number of chip connections according to a state information, and finds a selected trimming shift value from the look-up table storage device. The control logic circuit transmits a data signal in response to a clock signal, and adjusts a setup hold time between the clock signal and the data signal according to the selected trimming shift value.

Disclosed is a system including a memory device having a plurality of physical cells and a processing device, operatively coupled with the memory device, to perform operations that include selecting, responsive to detecting a power event, a subset of a plurality of memory cells of the memory device, the memory device being characterized by auxiliary read metadata identifying one or more read offsets for each of the plurality of memory cells, the one or more read offsets representing corrections to read signals applied to the respective memory cell during a read operation. The operations further include performing one or more diagnostic read operations for each of the subset of the plurality of memory cells of the memory device and modifying the auxiliary read metadata by updating the one or more read offsets for at least some of the plurality of memory cells of the memory device.

In an embodiment, a system includes an energy source and an integrated circuit that is coupled to one or more memory devices via a plurality of memory channels. A memory controller in the integrated circuit is programmable with a plurality of identifiers corresponding to the plurality of channels, and is further programmable with a command and a first identifier associated with the command. Responsive to the command, the memory controller is configured to perform one or more calibrations on a subset of the plurality of channels for which corresponding identifiers of the plurality of identifiers match the first identifier. Other ones of the plurality of channels, for which the corresponding identifiers do not match the first identifier, do not perform the calibration.

Examples described herein provide a method for testing a memory associated with a processing system of an aircraft. The method includes performing, during operation of the processing system, an operational built-in test on the memory. The method further includes, responsive to detecting an error in the memory during the operational built-in test, performing a focused memory test at a location in the memory of the error. The method further includes, responsive the error being confirmed by the focused memory test, causing the processing system to be taken offline.

Methods, systems, and devices for parameter table protection for a memory system are described. Upon booting a memory system for a first time, the memory system or a host system may generate an error control code associated with parameter data stored to the memory system. The error control code may be stored to the memory system and may be configured to correct one or more errors in the parameter data upon subsequent boot sequences of the memory system. Accordingly, upon booting the memory system for a second or a subsequent time, the error control code may be used to identify and correct errors in the parameter data, which may reduce the quantity of copies of parameter data stored to the memory system and may prevent the memory system from experiencing a system crash.