Embodiments of the present disclosure relate to a memory system and an operating method of the memory system. According to embodiments of the present disclosure, a memory system may store, for each of the plurality of memory dies, a program fail count indicating a cumulative number of occurrences of a program fail during a program operation for each memory die, and may change, for a target memory die among the plurality of memory dies, a first operation parameter among operation parameters applied to the target memory die when executing a program operation on the target memory die, based on a target program fail count which is the program fail count for the target memory die.

A technique includes determining, via an analog circuit, where an access rate of a memory row associated with a memory device exceeds a threshold. In various examples, upon a determination that the access rate exceeds the threshold, the technique may further comprise generating an alert to indicate possible corruption of data stored in an adjacent row to the memory row.

A memory system and a data processing system including the memory system may manage a plurality of memory devices. For example, the data processing system may categorize and analyze error information from the memory devices, acquire characteristic data from the memory devices and set operation modes of the memory devices based on the characteristic data, allocate the memory devices to a host workload, detect a defective memory device among the memory devices and efficiently recover the defective memory device.

A power management integrated circuit (PMIC) includes a voltage regulator, a monitoring circuit, and a count register. The voltage regulator is configured to generate an output voltage. The monitoring circuit is configured to receive a feedback voltage of the output voltage, and to determine at each of periodic intervals whether the feedback voltage is outside a threshold voltage range. The count register is configured to store a count value indicative of a number of times the feedback voltage is determined by the monitoring circuit to be outside the threshold voltage range.

A memory device includes a memory array with memory blocks each having a plurality of memory cells, and one or more current monitors configured to measure current during post-deployment operation of the memory device; and a controller configured to identify a bad block within the memory blocks based on the measured current, and disable the bad block for preventing access thereof during subsequent operations of the memory device.

A self-correcting memory system comprising an integrated circuit including memory and memory content authentication functionality, which is operative to compare content to be authenticated to a standard and to output “authentic” if the content to be authenticated equals the standard and “non-authentic” otherwise; and error correction functionality which is operative to apply at least one possible correction to at least one erroneous word entity in said memory, yielding a possibly correct word entity, call said authentication for application to the possibly correct word entity, and if the authentication's output is “authentic”, to replace said erroneous word entity in said memory, with said possibly correct word entity thereby to yield error correction at a level of confidence derived from the level of confidence associated with the authentication.

The present technology relates to a memory system and a method of operating the memory system. The memory system includes a memory device including a plurality of semiconductor memories, and a controller for controlling the memory device to perform a test program operation and a threshold voltage distribution monitoring operation on each of the plurality of semiconductor memories during an operation. The controller sets operation performance parameters of each of the semiconductor memories based on monitoring information obtained as a result of the threshold voltage distribution monitoring operation.

Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, responsive to detecting a triggering event, selecting a family of memory blocks of the memory device, the selected family being associated with a set of bins, each bin associated with a plurality of read voltage offsets to be applied to base read voltages during read operations. The operations performed by the processing device further include calibration operations to determine data state metric values characterizing application of read voltage offsets of various bins. The operations performed by the processing device further include identifying, based on the determined data state metrics, a target bin and associating the selected family with the target bin.

A test method for a memory device including a plurality of memory cells includes generating a first test pattern, performing a first pattern write operation of writing the first test pattern in the plurality of memory cells, reading first data from the plurality of memory cells in which the first test pattern was written, generating a second test pattern based on the first data, and performing a second pattern write operation of writing the second test pattern in the plurality of memory cells. The second test pattern is generated such that a write operation is skipped with regard to failure cells from among the plurality of memory cells at which a write failure occurs, during the second pattern write operation.

Methods, systems, and devices for monitoring and adjusting access operations at a memory device are described to support integrating monitors or sensors for detecting memory device health issues, such as those resulting from device access or wear. The monitoring may include traffic monitoring of access operations performed at various components of the memory device, or may include sensors that may measure parameters of components of the memory device to detect wear. The traffic monitoring or the parameters measured by the sensors may be represented by a metric related to access operations for the memory device. The memory device may use the metric (e.g., along with a threshold) to determine whether to adjust a parameter associated with performing access operations received by the memory device, in order to implement a corrective action.