Devices and techniques for an adjustable watchdog in a memory device are disclosed herein. A memory operation command is received at a first time with a memory device from a host. A reset signal is received, with the memory device from the host, at a second time following the first time. A time interval between the first time and the second time is measured. A delay interval for a timer in the memory device to reset the memory device independently of receiving a further reset signal from the host is established based on the measured time interval.

A memory includes: a plurality of row lines; a plurality of column lines; and a plurality of memory cells each of which is coupled to one row line among the row lines and one column line among the column lines, wherein memory cells corresponding to a row line which is selected based on a row address among the row lines are simultaneously activated, and data are read from memory cells corresponding to column lines which are selected based on a column address among the activated memory cells, and the selected column lines are not adjacent to each other.

Apparatuses and techniques are described for programming data in memory cells while concurrently storing backup data. Initial pages of multiple bit per cell data are encoded to obtain at least first and second pages of single bit per cell data. The initial pages of multiple bit per cell data are programmed into a primary set of memory cells, while concurrently the first and second pages of single bit per cell data are programmed into first and second backup sets of memory cells, respectively. In the event of a power loss, the first and second pages of single bit per cell data are read from the first and second backup sets of memory cells, and decoded to recover the initial pages of multiple bit per cell data.

A data storage system can utilize one or more data storage devices that employ a solid-state non-volatile read destructive memory consisting of ferroelectric memory cells. A leveling strategy can be generated by a wear module connected to the memory with the leveling strategy prescribing a plurality of memory cell operating parameters associated with different amounts of cell wear. The wear module may monitor activity of a memory cell and detect an amount of wear in the memory cell as a result of the monitored activity, which can prompt changing a default set of operating parameters for the memory cell to a first stage of operating parameters, as prescribed by the leveling strategy, in response to the detected amount of wear.

A scheme for handling program errors is provided for a memory system which includes a memory device and a controller including firmware and a memory interface. The firmware issues commands for program operations to the memory interface. After detecting a failed program operation in a particular memory block, the firmware reroutes that program operation to a different location in a different memory block and takes further action to reduce the likelihood of a subsequent error occurring in the same memory block in which the failed program operation occurred.

The disclosure relates to a method and system for memory testing to detect memory errors during operation of a memory module. Example embodiments include a method of detecting an error in a memory module (101), the method comprising the sequential steps of: i) receiving (302) a request from a processor executing an application for a read or write operation at a location of the memory module (101) identified by an address; ii) outputting data (304) from, or writing to, the location of the memory module (101); iii) generating (306) by an error detection module (102) a further read request for the location of the memory module (101) identified by the address; iv) receiving (307) at the error detection module (102) an error correction code from the memory module (101) for the location identified by the address; and vi) providing (311) by the error detection module (102) an alert output for the address if the error correction code indicates an error.

Devices, systems and methods for improving the performance of a memory device are described. An example method includes performing, based on a plurality of read voltages, read operations on each of a plurality of pages of a memory device, determining, based on the read operations for each page of the plurality of pages, a ones count in each page and a checksum of an error correcting code for each page, generating a first estimator for the checksum and a second estimator for the ones count based on a polynomial regression, determining, based on the first estimator and the second estimator, an updated plurality of read voltages, and applying the updated plurality of read voltages to the memory device to retrieve information from the memory device.

An apparatus includes one or more control circuits configured to connect to a plurality of non-volatile memory cells arranged along word lines. The one or more control circuits are configured to receive a plurality of encoded portions of data to be programmed in non-volatile memory cells of a target word line, each encoded portion of data encoded according to an Error Correction Code (ECC) encoding scheme, and arrange the plurality of encoded portions of data in a plurality of rows of data latches corresponding to a plurality of logical pages such that each encoded portion of data is distributed across two or more rows of data latches. The one or more control circuits are also configured to program the distributed encoded portions of data from the plurality of rows of data latches into non-volatile memory cells along a target word line.

A method of operating a host device includes transmitting a read command that requests information related to an eye open monitor (EOM) operation performed in a memory device to the memory device, and receiving a response signal including the information related to the EOM operation performed in the memory device from the memory device.

Disclosed in some examples are improvements to data placement architectures in NAND that provide additional data protection through an improved NAND data placement schema that allows for recovery from certain failure scenarios. The present disclosure stripes data diagonally across page lines and planes to enhance the data protection. Parity bits are stored in SLC blocks for extra protection until the block is finished writing and then the parity bits may be deleted.