A computer-implemented method includes refreshing a set of memory channels in a memory system substantially simultaneously, each memory channel refreshing a rank that is distinct from each of the other ranks being refreshed. Further, the method includes marking a memory channel from the set of memory channels as being unavailable for the rank being refreshed in the memory channel. In one or more examples, the method further includes blocking a fetch command to the memory channel for the rank being refreshed in the memory channel.

A memory device includes a memory cell array including memory cells connected to word lines and bit lines. Each of the memory cells includes a switch element and a memory element, and has a first state or a second state in which a threshold voltage is within a first voltage range or a second voltage range, lower than the first voltage range. A memory controller is configured to execute a first read operation for the memory cells using a first read voltage, higher than a median value of the first voltage range, program first defect memory cells turned off during the first read operation to the first state, execute a second read operation for the memory cells using a second read voltage, lower than a median value of the second voltage range, and execute a repair operation for second defect memory cells turned on during the second read operation.

Performing refresh operation in a memory device is provided. A refresh operation without address rotation is performed in a cell array of the memory device. Performing the refresh operation without address rotation is repeated for a predetermined number of times. After repeating performing the refresh operation with address rotation for the predetermined number of times, a refresh operation with address rotation is performed in the cell array.

A technique for managing SSDs in a data storage system generates an endurance value for each of multiple SSDs and arranges the SSDs in RAID groups based at least in part on the generated endurance values. As a result of such arranging, some RAID groups may include only SSDs with higher endurance values while other RAID groups may include only SSDs with lower endurance values. The data storage system may then run RAID groups with higher endurance values at higher speeds and may run RAID groups with lower endurance values at lower speeds.

Weak erase detection and mitigation techniques are provided that detect permanent failures in solid-state storage devices. One exemplary method comprises obtaining an erase fail bits metric for a solid-state storage device; and detecting a permanent failure in at least a portion of the solid-state storage device causing weak erase failure mode by comparing the erase fail bit metric to a predefined fail bits threshold. In at least one embodiment, the method also comprises mitigating for the permanent failure causing the weak erase failure mode for one or more cells of the solid-state storage device. The mitigating for the permanent failure comprises, for example, changing a status of the one or more cells to a defective state and/or a retired state. The detection of the permanent failure causing the weak erase failure mode comprises, for example, detecting the weak erase failure mode without an erase failure.

Methods, systems, and devices for charge leakage detection for memory system reliability are described. In accordance with examples as disclosed herein, a memory system may employ memory management techniques configured to identify precursors of charge leakage in a memory device, and take preventative action based on such identified precursors. For example, a memory system may be configured to perform a leakage detection evaluation for a memory array, which may include various biasing and evaluation operations to identify whether a leakage condition of the memory array may affect operational reliability. Based on such an evaluation, the memory device, or a host device in communication with the memory device, may take various preventative measures to avoid operational failures of the memory device or host device that may result from ongoing operation of a memory array associated with charge leakage, thereby improving reliability of the memory system.

A data storage device including, in one implementation, a non-volatile memory device having a memory block including a number of memory dies, and a controller coupled to the non-volatile memory device. The controller is configured to monitor a temperature of the data storage device and determine whether the monitored temperature exceeds a first temperature threshold. The controller is also configured to perform a default thermal throttling operation based on the monitored temperature exceeding the first temperature threshold, determine whether the monitored temperature exceeds a second temperature threshold, and perform a customized thermal throttling operation based on the monitored temperature exceeding the second temperature threshold.

Devices, systems, and methods for non-volatile storage include a well activation device operable to modify one or more wells from a plurality of wells of a flow cell to provide a set of readable wells. Readable wells are configured to allow exposure of a well to substances from nucleotide sequencing fluids, and prevent exposure to other substances and fluids, such as nucleotide synthesizing fluids. The well activation device may also modify wells to provide a set of writeable wells. This set of wells is configured to allow exposure to the nucleotide synthesizing fluids and substances; and prevent exposure to the nucleotide sequencing fluids and substances. There may also be provisions made for risk mitigation for data errors such as generating commands to write specified data to a nucleotide sequence associated with a particular location in a storage device, reading the nucleotide sequence and performing a comparison.

Methods, systems, and devices for hazard detection in a multi-memory device are described. A device may receive a first command that indicates a first bank address, a first row address, and a first column address. Based on the first bank address, the device may select a buffer for a hazard detection procedure that detects hazardous commands. The device may compare, as part of the hazard detection procedure, the first row address and the first column address from the first command with a second row address and a second column address from a second command in the buffer. The device may determine whether the first command and the second command are hazardous commands based on comparing the first row address and the first column address from the first command with the second row address and the second column address from the second command.

Methods and systems for detecting and monitoring memory card performance characteristics. A method for detecting memory card performance characteristics includes obtaining at least one memory card performance characteristic from a memory card when the memory card is inserted in an image capture device, determining whether the at least one memory card performance characteristic meets a defined image capture device requirement, and providing an alert when the at least one memory card performance characteristic fails to match the defined image capture device requirement.