A semiconductor memory device includes a quadrature error correction circuit, a clock generation circuit and a data input/output (I/O) buffer. The quadrature error correction circuit performs a locking operation to generate a first corrected clock signal and a second corrected clock signal by adjusting a skew and a duty error of a first through fourth clock signals generated based on a data clock signal and performs a relocking operation to lock the second corrected clock signal to the first corrected clock signal in response to a relock signal. The clock generation circuit generates an output clock signal and a strobe signal based on the first corrected clock signal and the second corrected clock signal. The data I/O buffer generates a data signal by sampling data from a memory cell array based on the output clock signal and transmits the data signal and the strobe signal to a memory controller.

Memory devices may have an array of elements in two or more dimensions. The memory devices use multiple access lines arranged in a grid to access the memory devices. Memory cells located at intersections of the access lines in the grid. Drivers are used for each access line and configured to transmit a corresponding signal to respective memory cells of the plurality of memory cells via a corresponding access line. The memory devices may use an address scrambler to determine a bit error rate for accessing memory cells and remap an address of a particular memory cell to have a bit error rate below a threshold. In this way, the address scrambler may distribute the bit error rates of multiple accesses of the array.

A semiconductor integrated circuit includes a plurality of sense amplifier units including a first group of sense amplifier units and a second group of sense amplifier units, a first data bus, a second data bus, a transfer circuit between the first data bus and the second data bus, and a data latch connected to the second data bus and to the first data bus through the transfer circuit and the second data bus. Each sense amplifier unit is connected to one of the bit lines. The first data bus is connected to each of the sense amplifier units in the first group. The second data bus is connected to each of the sense amplifier units in the second group. The transfer circuit controls the transfer of data between the first data bus and the second data bus in both directions.

A set of bits of a segment of a memory device that is associated with an unsuccessful first decoding operation can be identified. A discrepancy value for at least one bit of the set of bits can be calculated. It can be determined whether the discrepancy value calculated for the at least one bit of the set of bits corresponds to a correction capability of the failed decoding operation. In response to determining that the discrepancy value calculated for the at least one bit corresponds to the correction capability of the failed decoding operation, the at least one bit of the set of bits can be corrected by switching a value of the at least one bit.

Various aspects include methods and devices for implementing the methods for error checking a memory system. Aspects may include receiving, from a row buffer of a memory, access data corresponding to a column address of a memory access, in which the row buffer has data of an activation unit of the memory corresponding to a row address of the memory access, determining multiple error correction codes (ECCs) for the access data using the column address, and checking the access data for an error utilizing at least one of the multiple ECCs. In some aspects, the multiple ECCs may include a first ECC having data from an access unit of the memory corresponding with the column address, and at least one second ECC having data from the access unit and data from the activation unit other than from the access unit.

Apparatus and method for replacing portions of a quantum circuit with multi-qubit gates. For example, one embodiment of an apparatus comprises: a quantum circuit analyzer to evaluate an original quantum circuit specification including one or more sub-circuits of the original quantum circuit specification, the quantum circuit analyzer to generate results of the evaluation; a quantum circuit generator to generate a new quantum circuit specification based on the results of the evaluation generated by the quantum circuit analyzer, the quantum circuit generator to generate the new quantum circuit specification by, at least in part, replacing the one or more sub-circuits of the original quantum circuit specification with one or more multi-qubit gates.

The present technology may include a first storage circuit connected to a plurality of memory banks, an error correction circuit, a read path including a plurality of sub-read paths connected between the plurality of memory banks and the error correction circuit, and a control circuit configured to control data output from the plurality of memory banks to be simultaneously stored in the first storage circuit by deactivating the read path during a first sub-test section, and to control the data stored in the first storage circuit to be sequentially transmitted to the error correction circuit by sequentially activating the plurality of sub-read paths during a second sub-test section.

A caching system including a first sub-cache and a second sub-cache in parallel with the first sub-cache, wherein the second sub-cache includes a set of cache lines, line type bits configured to store an indication that a corresponding cache line of the set of cache lines is configured to store write-miss data, and an eviction controller configured to flush stored write-miss data based on the line type bits.

A method for the secured storing of a data element of a predefined data type to be stored by a computer program in an external memory, which is connected to a microcontroller, an error correction value of one error correction value data type being used. The method includes, when creating the computer program: defining a composite data element that includes one element of the data type and one element of the error correction value data type, in the computer program; and when executing the computer program: calculating the error correction value for the data element to be stored; forming an error correction data element as the composite data element, which contains the data element to be stored and the associated error correction value, which has been calculated for the data element; and writing the error correction data element to a memory address for the error correction data element.

The present disclosure relates to integrated circuits, and more particularly, to a method for identifying unprogrammed bits for one-time-programmable memory (OTPM) and a corresponding structure. In particular, the present disclosure relates to a structure including: a read circuit configured to perform at least one read operation at an address for a twin-cell one-time-programmable-memory (OTPM); and a comparison circuit configured to identify whether at least one bit of the address for the twin-cell OTPM has been programmed based on the at least one read operation.