A non-volatile storage system includes a three dimensional structure comprising vertical columns of memory cells and a managing circuit in communication with the vertical columns. The managing circuit applies one or more patterns of stress voltages to the vertical columns, with different voltages applied to each vertical column of pairs of adjacent vertical columns being tested for shorts. The managing circuit tests for a short in the pairs of adjacent vertical columns after applying the one or more patterns of stress voltages. In one embodiment, the test may comprise programming a memory cell in each vertical column with data that matches the pattern of stress voltages, reading from the memory cells and determining whether data read matches data programmed. The applying of the stress voltages and the testing can be performed as part of a test during manufacturing or in the field during user operation.

A non-volatile storage system includes a three dimensional structure comprising vertical columns of memory cells and a managing circuit in communication with the vertical columns. The managing circuit applies one or more patterns of stress voltages to the vertical columns, with different voltages applied to each vertical column of pairs of adjacent vertical columns being tested for shorts. The managing circuit tests for a short in the pairs of adjacent vertical columns after applying the one or more patterns of stress voltages. In one embodiment, the test may comprise programming a memory cell in each vertical column with data that matches the pattern of stress voltages, reading from the memory cells and determining whether data read matches data programmed. The applying of the stress voltages and the testing can be performed as part of a test during manufacturing or in the field during user operation.

A system and method are provided for self-testing one or more digital data storage drives. In particular, a drive tester system connects to the one or more digital data storage drives via a standard two-wire interface, such as a system management bus interface or an I.sup.2C interface. The drive tester system performs a self-test on the on more digital data storage drives via the standard two-wire interface. The self-test of the digital data storage drive includes a burn-in and endurance test.

A system and method are provided for self-testing one or more digital data storage drives. In particular, a drive tester system connects to the one or more digital data storage drives via a standard two-wire interface, such as a system management bus interface or an I.sup.2C interface. The drive tester system performs a self-test on the on more digital data storage drives via the standard two-wire interface. The self-test of the digital data storage drive includes a burn-in and endurance test.

According to an embodiment, a semiconductor device includes a transmission circuit including first and second transistors coupled in series between a first voltage terminal and a second voltage terminal, and a first common node coupled between the first and second transistors and coupled to a through line, the transmission circuit outputting a signal transferred from an internal circuit to the first common node according to an output control signal; a reception circuit including third and fourth transistors coupled in series between the first voltage terminal and the second voltage terminal, and a second common node coupled between the third and fourth transistors and coupled to the internal circuit, the reception circuit transferring a signal transferred through the through line to the internal circuit according to a first input control signal; and a deterioration acceleration circuit for applying stress to the first and third transistors according to a test signal.

Methods, systems, and devices for back-bias optimization are described. An apparatus, such as an electronic apparatus, may include a first substrate region and a second substrate region. The apparatus may also include a voltage generator that is disposed on the first substrate region and that includes an output terminal coupled with a conductive path. The apparatus may also include a set of clamp circuits disposed on the second substrate region. The set of clamp circuits may be configured selectively couple the conductive path with a voltage supply.

A memory cell readable through a bit line and addressable through a word line can be stressed by applying a stress voltage to the bit line for a stress voltage time, and addressing the memory cell through the word line for an addressing time included within the stress voltage time. The memory cell can be tested by writing a data value into the memory cell, stressing the memory cell, reading the stored value from the memory cell, and determining whether the stored value corresponds to the data value. A testable memory array can include a memory cell addressable through a word line and readable through a bit line, a precharge circuit, a stress circuit, and an array built-in self test (ABIST) circuit. The ABIST circuit can be configured to stress the memory cell by applying a stress signal to the stress circuit.

A test system for a memory device includes: a chamber including at least one test socket column having a plurality of test sockets arranged in a first direction, wherein memory devices to be tested are in respective ones of the plurality of test sockets, a temperature adjusting apparatus configured to supply air into the chamber according to a temperature control signal to control a temperature of the chamber, a test device electrically connected to the test sockets and configured to test the memory devices, and a temperature controller configured to receive temperature information of the memory devices from temperature sensors of the memory devices and to output to the temperature adjusting apparatus the temperature control signal to compensate for a temperature difference between a detected temperature of the memory devices and a target temperature.

Methods and apparatus for using characterized devices such as memories. In one embodiment, characterized memories are associated with a range of performances over a range of operational parameters. The characterized memories can be used in conjunction with a solution density function to optimize memory searching. In one exemplary embodiment, a cryptocurrency miner can utilize characterized memories to generate memory hard proof-of-work (POW). The results may be further validated against general compute memories; such that only valid solutions are broadcasted to the mining community. In one embodiment, the validation mechanism is implemented for a plurality of searching apparatus in parallel to provide a more distributed and efficient approach. Various other applications for characterized memories are also described in greater detail herein (e.g., blockchain, social media, machine learning, probabilistic applications and other error-tolerant applications).

Methods and apparatus for using characterized devices such as memories. In one embodiment, characterized memories are associated with a range of performances over a range of operational parameters. The characterized memories can be used in conjunction with a solution density function to optimize memory searching. In one exemplary embodiment, a cryptocurrency miner can utilize characterized memories to generate memory hard proof-of-work (POW). The results may be further validated against general compute memories; such that only valid solutions are broadcasted to the mining community. In one embodiment, the validation mechanism is implemented for a plurality of searching apparatus in parallel to provide a more distributed and efficient approach. Various other applications for characterized memories are also described in greater detail herein (e.g., blockchain, social media, machine learning, probabilistic applications and other error-tolerant applications).