A system, method and apparatus of memory failure prediction through image analyses using an artificial neural network. A sequence of images indicative of progress of memory failures in a region of an integrated circuit die can be generated according to a physical layout of memory cells in the region. The artificial neural network can be trained to recognize graphical features in early images in the sequence and to predict, based on the recognized graphical features, memory failures shown in subsequent images in the sequence. A computing apparatus can use the artificial neural network to analyze an input image shown current memory failures in the region and to identify one or more memory cells in the region that are likely to have subsequent memory failures.

A system, method and apparatus of memory failure prediction through image analyses using an artificial neural network. A sequence of images indicative of progress of memory failures in a region of an integrated circuit die can be generated according to a physical layout of memory cells in the region. The artificial neural network can be trained to recognize graphical features in early images in the sequence and to predict, based on the recognized graphical features, memory failures shown in subsequent images in the sequence. A computing apparatus can use the artificial neural network to analyze an input image shown current memory failures in the region and to identify one or more memory cells in the region that are likely to have subsequent memory failures.

Various examples described herein are directed to systems and methods for generating data values using a NAND flash array. A memory controller may read a number of memory cells at the NAND flash array using an initial read level to generate a first raw string. The memory controller may determine that a difference between a number of bits from the first raw string having a value of logical zero and a number of bits from the first raw string having a value of logical one is greater than a threshold value and read the number of memory cells using a second read level to generate a second raw string. The memory controller may determine that a difference between a number of bits from the second raw string having a value of logical zero and a number of bits from the second raw string having a value of logical one is not greater than a threshold value and applying a cryptographic function using the second raw string to generate a first PUF value.

An integrated circuit (IC) includes a non-volatile memory and boot circuitry. The boot circuitry is configured to boot the IC, including reading from the non-volatile memory one or more values indicative of whether production testing of the IC was completed successfully, and initiating a responsive action if the one or more values indicate that the production testing was not completed successfully.

A memory device includes a first memory block. The first memory block includes a first memory sub-array and a first interface portion disposed next to the first memory sub-array. The first interface portion has a plurality of first control structures formed as a first staircase profile. The first memory block further includes a plurality of first interconnect structures landing on a corresponding one of the plurality of first control structures, and a plurality of second interconnect structures configured to electrically couple a corresponding one of the plurality of first interconnect structures to a first transistor. The memory device further includes a first test structure and a second test structure disposed next to the first memory block, each configured to simulate electrical connections of the plurality of second interconnect structures. The first and second test structures are electrically coupled to each other and are electrically isolated form the first memory block.

A memory device includes a first memory block. The first memory block includes a first memory sub-array and a first interface portion disposed next to the first memory sub-array. The first interface portion has a plurality of first control structures formed as a first staircase profile. The first memory block further includes a plurality of first interconnect structures landing on a corresponding one of the plurality of first control structures, and a plurality of second interconnect structures configured to electrically couple a corresponding one of the plurality of first interconnect structures to a first transistor. The memory device further includes a first test structure and a second test structure disposed next to the first memory block, each configured to simulate electrical connections of the plurality of second interconnect structures. The first and second test structures are electrically coupled to each other and are electrically isolated form the first memory block.

An information handling system may include at least one processor, a memory, and an embedded controller (EC). The information handling system may be configured to, prior to initialization of an operating system of the information handling system: execute memory reference code configured to test selected regions of the memory; transmit results of the memory reference code to the EC; store, at the EC, information indicative of respective likelihoods that particular regions of the memory are bad; and upon a subsequent boot, select a region of the memory having a low likelihood of being bad for loading a Basic Input/Output System (BIOS) of the information handling system.

A memory device according to one embodiment includes a memory cell array, bit lines, amplifier units, a controller, and a register. The memory cell array includes a memory cell that stores data nonvolatilely. The bit lines are connected to the memory cell array. The sense amplifier units are connected to the bit lines, respectively. The controller performs a write operation. The register stores status information of the write operation. The memory cell array includes a first storage region specified by a first address. The plurality of sense amplifier modules include a buffer region capable of storing data.

A memory system and a data processing system including the memory system may manage a plurality of memory devices. For example, the data processing system may categorize and analyze error information from the memory devices, acquire characteristic data from the memory devices and set operation modes of the memory devices based on the characteristic data, allocate the memory devices to a host workload, detect a defective memory device among the memory devices and efficiently recover the defective memory device.

A memory system and a data processing system including the memory system may manage a plurality of memory devices. For example, the data processing system may categorize and analyze error information from the memory devices, acquire characteristic data from the memory devices and set operation modes of the memory devices based on the characteristic data, allocate the memory devices to a host workload, detect a defective memory device among the memory devices and efficiently recover the defective memory device.