An embodiment of a method for automated test pattern generation (ATPG), a system for ATPG, and a memory configured for ATPG. For example, an embodiment of a memory includes a first test memory cell, a data-storage memory cell, and a test circuit configured to enable the test cell and to disable the data-storage cell during a test mode.

A signal input/output circuit is provided with an input line, a common output line, a plurality of individual output lines, relay switches, and resistor elements. The common output line is connected to a comparator. The common output line synthesizes response signals transmitted from a plurality of devices under test (DUT), and transmits a synthesized response signal generated by synthesizing, into one signal, the response signals outputted from the respective DUTs. In response to a test signal transmitted from a pattern generator, the comparator compares the synthesized response signal with a threshold value.

A test system is disclosed. The test system includes a tester, a first voltage stabilization circuit, and a device under test (DUT). The tester generates a first operational voltage and a control signal. The first voltage stabilization circuit transmits a second operational voltage, associated with the first operational voltage, to a socket board. The DUT operates with the second operational voltage received through the socket board. The first voltage stabilization circuit is further configured to control, according to the control signal, the second operational voltage to have a first voltage level when the DUT is operating.

A semiconductor memory device includes a test pattern data storage configured to store test write pattern data in response to a register write command and a register address and output test read pattern data in response to a test read command and a test pattern data selection signal during a test operation, a memory cell array including a plurality of memory cells and configured to generate read data, a read path unit configured to generate n read data, by serializing the read data, and a test read data generation unit configured to generate n test read data, by comparing the test read pattern data with each of the n read data, generated at a first data rate, and generate the n test read data, at a second data rate lower than the first data rate, during the test operation.

A multicycle path circuit capable of operating at a functional mode and an at-speed test mode. The multicycle path circuit includes an on-chip controller configured to receive an on-chip clock signal and modulate the on-chip clock signal to provide a first clock signal to a first circuit and a second clock signal to a second circuit. The first clock signal and the second clock signal are in a multicycle phase relationship. The on-chip controller is configured to ensure the clock paths to and from the second circuit to be the same for the functional mode and the at-speed test mode and therefore to avoid hold and setup timing conflict between these modes,

A method of operating a memory device includes: supplying one or more supply voltages to a memory array; and monitoring the one or more supply voltages, which includes: selecting, from the one or more supply voltages, a selected supply voltage; converting, using an analog-to-digital converter (ADC), an internal reference voltage of the memory device and a scaled version of the selected supply voltage into one or more digital values; generating a calibrated measurement result using the one or more digital values; and determining whether the calibrated measurement result is within a pre-determined range.

Systems and methods are provided for testing a Device Under Test (DUT) in its working environment. A control computer is coupled to an air compressor and generates a temperature control signal that is provided to the air compressor to generate an amount of hot air or cold air to set the temperature of the DUT's working environment to a desired test temperature. The control computer also generates at least one test signal that is sent to a hardware test element for testing at least one memory component of the DUT at the desired test temperature and obtaining test results. The control computer analyzes the test results to determine a parameter adjustment for the at least one memory element so that it operates in a stable manner at the test temperature.

A memory module includes at least one semiconductor memory device, and a test pattern memory that stores first test pattern information for testing the at least one semiconductor memory device, and the first test pattern information stored in the test pattern memory is transferred to a host in a test operation. Through the memory module having the above-described function, a memory test is possible in consideration of a unique weak characteristic of the memory module.

Testability of memory on integrated circuits is improved by connecting storage elements like latches in memory to scan chains and configuring memory for scan dump. The use of latches and similar compact storage elements to form scannable memory can extend the testability of high-density memory circuits on complex integrated circuits operable at high clock speeds. A scannable memory architecture includes an input buffer with active low buffer latches, and an array of active high storage latches, operated in coordination to enable incorporation of the memory into scan chains for ATPG/TT and scan dump testing modes.

Provided is a test apparatus for testing a device under test (DUT), the apparatus operating at an operating frequency that is lower than an operating frequency of the DUT. The test apparatus includes a clock source which generates a clock according to the operating frequency of the test apparatus, a clock multiplier configured to multiply the generated clock source by a multiplication number which is set according to the operating frequency of the DUT and output a first clock for the DUT, a phase converter configured to shift a phase of the generated clock according to the multiplication number and output a plurality of second clocks having different phases, and a test pattern comparator configured to sequentially collect pieces of data from the DUT by sequentially applying the plurality of second clocks having different phases.