A 3D semiconductor device with a built-in-test-circuit (BIST), the device comprising: a first single-crystal substrate with a plurality of logic circuits disposed therein, wherein said first single-crystal substrate comprises a device area, wherein said plurality of logic circuits comprise at least a first interconnected array of processor logic, wherein said plurality of logic circuits comprise at least a second interconnected set of circuits comprising a first logic circuit, a second logic circuit, and a third logic circuit, wherein said second interconnected set of logic circuits further comprise switching circuits that support replacing said first logic circuit and/or said second logic circuit with said third logic circuit; and said built-in-test-circuit (BIST), wherein said first logic circuit is testable by said built-in-test-circuit (BIST), and wherein said second logic circuit is testable by said built-in-test-circuit (BIST).

A system and method for centrally logging and aggregating miscompares on chip during a memory test. The method includes performing, by a built-in self-test (BIST) unit of a memory device, a memory test on one or more memory banks of the memory device using a first algorithm. The method includes generating miscompare results responsive to performing the memory test on the one or more memory banks of the memory device. The method includes determining failure diagnostic information based on the miscompare results. The method includes generating an error packet comprising the failure diagnostic information and the miscompare results. The method includes placing the error packet in a queue of a plurality of error packets to generate a queued error packet.

A method includes specifying a target memory macro, and determining failure rates of function-blocks in the target memory macro based on an amount of transistors and area distributions in a collection of base cells. The method also includes determining a safety level of the target memory macro, based upon a failure-mode analysis of the target memory macro, from a memory compiler, based on the determined failure rate.

A system and method for defect localization in embedded memory are provided. Embodiments include a system including automated testing equipment (ATE) interfaced with a wafer probe including a diagnostic laser for stimulating a DUT with the diagnostic laser at a ROI. The ATE is configured to simultaneously perform a test run at a test location of the DUT with a test pattern during stimulation of the DUT. Failing compare vectors of a reference failure log of a defective device are stored. A first profile module is configured to generate a first 3D profile from each pixel of a reference image of the defective device. A second profile module is configured to generate a second 3D profile from each pixel of the ROI of the DUT. A cross-correlation module is configured to execute a pixel-by-pixel cross-correlation from the first and second 3D profiles and generate an intensity map corresponding to a level of correlation between the DUT and defective device.

An integrated circuit comprises a set of processor cores, wherein each processor core of the set of processor cores includes BIST logic circuitry and multiple memory blocks coupled to the BIST logic circuitry. Each processor core further includes multiple power control circuitry, where each power control circuitry of the multiple power control circuitry is coupled to a respective processor core of the set of processor cores, multiple isolation circuitry, where each isolation circuitry of the multiple isolation circuitry is coupled to a respective processor core of the set of processor cores, a built-in-self repair (BISR) controller coupled to the each of the set of processor cores, each of the multiple power control circuitry, and each of the multiple isolation circuitry, and a safety controller coupled to the BISR controller, the multiple power control circuitry, and to the multiple isolation circuitry.

Embodiments are directed to a computer implemented method and system for the testing, characterization and diagnostics of integrated circuits. A system might include a device under test, such as an integrated circuit, that includes an adaptive microcontroller. The method includes loading a testing program for execution by the adaptive microcontroller, causing the microcontroller to execute the testing program. Once results from the testing program are received, the testing program can be adaptively modified based on the results. The modified testing program can be run again. The testing program can modify parameters of the integrated circuit that are not externally accessible. Other embodiments are also disclosed.

A communication apparatus comprises a CAM, an action determination unit, and a CAM diagnosis unit. The CAM includes, a plurality of entries each storing therein at least a portion of header information of frame, and a search circuit for each entry configured to determine whether or not a search key matches data stored at the entry. The search key is correlated with information indicating whether or not an entry matching the search key and an expected value of a search result including identification information of an entry matching the search key. The CAM diagnosis unit causes the CAM to search for an entry matching the search key. The CAM diagnosis unit diagnoses a failure occurring at the search circuit of an entry to be the test object when the result of the search does not match the expected value of a search result correlated to the search key.

The present application provides a circuit and an associated chip. The circuit is coupled to a memory. The circuit includes: a first scan flip-flop (FF), being a previous-stage scan FF of an input terminal of the memory and having an output terminal coupled to an input terminal of the memory; and a second scan FF, being a next-stage scan FF of an output terminal of the memory and having an input terminal coupled to an output terminal of the memory; wherein a scan mode of the circuit has a load phase and a capture phase, during the capture phase, data output from the output terminal of the first scan FF loops back to a data input terminal of the first scan FF via a first loop, and the first loop is free from passing through the second scan FF.

A test system may include: a vector storage unit suitable for storing a first test vector corresponding to a first test operation; a test target suitable for performing a test operation corresponding to the test vector stored in a vector storage unit; a comparison unit suitable for comparing a first test result to an expected value to output a first test result value, wherein the first test result is transferred from the test target as a result of the first test operation based on the first test vector; and a vector control unit suitable for modifying the first test vector to generate a second test vector corresponding to a second test operation.

A memory device includes: a memory cell array comprising a plurality of memory cells; a temperature sensor configured to detect a temperature of the memory cell array; a write circuit configured to write data into the plurality of memory cells; and a controller coupled to the temperature sensor and the write circuit, wherein the controller is configured to determine a target write pulse width used by the write circuit based on the detected temperature of the memory device.