In some embodiments, a semiconductor wafer testing system is provided. The semiconductor wafer testing system includes a semiconductor wafer prober having one or more conductive probes, where the semiconductor wafer prober is configured to position the one or more conductive probes on an integrated chip (IC) that is disposed on a semiconductor wafer. The semiconductor wafer testing system also includes a ferromagnetic wafer chuck, where the ferromagnetic wafer chuck is configured to hold the semiconductor wafer while the wafer prober positions the one or more conductive probes on the IC. An upper magnet is disposed over the ferromagnetic wafer chuck, where the upper magnet is configured to generate an external magnetic field between the upper magnet and the ferromagnetic wafer chuck, and where the ferromagnetic wafer chuck amplifies the external magnetic field such that the external magnetic field passes through the IC with an amplified magnetic field strength.

The present disclosure relates to a memory test system and a memory test method. The memory test system comprises: a plurality of test devices, a host computer, and driving modules. Each of the test devices is provided with a test interface used for connecting a memory to be tested. The host computer is respectively connected to the plurality of test devices and configured to control the test devices to test the memory to be tested. The driving modules are connected to the test devices and configured to output, to the test devices, driving signals used for driving the test devices to perform data interaction with the host computer.

A memory storage device that performs real-time monitoring is provided. The memory storage device comprises a memory controller, and a status indicating module/circuit, wherein the memory controller is configured to perform a first a second initialization operation, the first and second initialization operations performed in response to turning-on of the memory storage device, to generate a first status parameter regarding a status of the memory storage device in which the first initialization operation is performed, and to generate a second status parameter regarding the status of the memory storage device in which a second initialization operation is performed. The status indicating circuit includes a first transistor configured to operate on the basis of the first status parameter, a first resistor connected to the first transistor, a second transistor configured to operate on the basis of the second status parameter, and a second resistor connected to the second transistor.

A location of at least one fail bit to be repaired in a memory block of a memory is extracted from at least one memory test on the memory block. An available repair resource in the memory for repairing the memory block is obtained. It is checked, using machine learning, whether the at least one fail bit is unrepairable, according to the location of the at least one fail bit, and the available repair resource. When the checking indicates that the at least one fail bit is not unrepairable, it is determined whether a Constraint Satisfaction Problem (CSP) containing a plurality of constraints is solvable. The constraints correspond to the location of the at least one fail bit in the memory block, and the available repair resource. In response to determining that the CSP is not solvable, the memory block is marked as unrepairable or the memory is rejected.

A testing apparatus comprises a tester comprising a plurality of racks, wherein each rack comprises a plurality of slots, wherein each slot comprises: (a) an interface board affixed in a slot of a rack, wherein the interface board comprises test circuitry and a plurality of sockets, each socket operable to receive a device under test (DUT); and (b) a carrier comprising an array of DUTs, wherein the carrier is operable to displace into the slot of the rack; and (c) an array of POP memory devices, wherein each POP memory device is disposed adjacent to a respective DUT in the array of DUTs. Further, the testing apparatus comprises a pick-and-place mechanism for loading the array of DUTs into the carrier and an elevator for transporting the carrier to the slot of the rack.

A test board for testing a memory signal includes a first surface and a second surface. The first surface of the test board comprises a convex region and a non-convex region. The convex region is provided with a first connection area connectable to a main board, and a level at which the convex region is located is higher than a level at which the non-convex region is located by a preset value. The second surface of the test board includes a test area and a second connection area connectable to a memory chip. The test board is provided with a first connection harness for connecting the test area to the first connection area and a second connection harness for connecting the test area to the second connection area, to enable the memory signal of the memory chip to be tested based on the test area.

Methods, systems, and devices supporting an auto-power on mode for biased testing of a power management integrated circuit (PMIC) are described. A system may program a PMIC of a memory system to a specific mode. The mode may cause the PMIC to apply a bias to a memory device of the memory system upon receiving power and independent of a command to apply the bias to the memory device. The system may transmit power to the memory system while controlling one or more operating conditions (e.g., temperature, humidity) for a threshold time. The PMIC may apply a bias to the memory device during the threshold time based on the PMIC being programmed to the mode and the transmitted power. The system may identify a capability or defect of the memory device resulting from transmitting the power to the memory system while controlling the operating conditions for the threshold time.

The present application discloses a chip socket, a testing fixture and a chip testing method thereof. The chip socket includes a pedestal, a plurality of conductive traces, a plurality of clamp structures, and a plurality of electrical contacts. The plurality of conductive traces are formed in the pedestal. The plurality of clamp structures are conductive and disposed on the first surface of the pedestal, and at least one of the plurality of clamp structures is coupled to a corresponding conductive trace and configured to clamp a solder ball of a chip to be tested. The plurality of electrical contacts are disposed on the second surface of the pedestal, and at least one of the plurality of electrical contacts is coupled to a corresponding clamp structure through a corresponding conductive trace.

A system comprises a memory sub-system controller mounted to a printed circuit board (PCB) and an in-circuit test (ICT) device. The memory sub-system controller has test points on the PCB comprising stimulus points and observation points. The ICT device connects to the test points of the controller. The ICT device converts automated test pattern generation (ATPG) input test vectors to test signals. A first set of pin drivers of the ICT device applies the test signals to the stimulus points of the controller and a second set of pin drivers of the ICT device read output signals output at the observation points of the controller. A comparator of the ICT device compares the output signals with output test vectors. The comparator provides test result data comprising a result of the comparison.

A multiple operating-mode comparator system can be useful for high bandwidth and low power automated testing. The system can include a gain stage configured to drive a high impedance input of a comparator output stage, wherein the gain stage includes a differential switching stage coupled to an adjustable impedance circuit, and an impedance magnitude characteristic of the adjustable impedance circuit corresponds to a bandwidth characteristic of the gain stage. The comparator output stage can include a buffer circuit coupled to a low impedance comparator output node. The buffer circuit can provide a reference voltage for a switched output signal at the output node in a higher speed mode, and the buffer circuit can provide the switched output signal at the output node in a lower power mode.