G11C29/56016

Non-volatile memory device and method of writing to non-volatile memory device

A non-volatile memory device includes: a memory group of a plurality of variable resistance memory cells in which digital data is recorded according to a magnitude of a resistance value, the memory group including at least one data cell and at least one dummy cell which are associated with each other; and a read circuit which performs, in parallel, a read operation on each of the plurality of memory cells included in the memory group. Dummy data, for reducing a correlation between a side-channel leakage generated when the read operation is performed by the read circuit and information data recorded in the at least one data cell, is recorded in the at least one dummy cell.

MEMORY ARRAY TEST METHOD AND SYSTEM

A method of testing a non-volatile memory (NVM) array includes heating the NVM array to a target temperature. While the NVM array is heated to the target temperature, a current distribution is obtained by measuring a plurality of currents of a subset of NVM cells of the NVM array, each NVM cell of the NVM array is programmed to one of a logically high state or a logically low state, and first and second pass/fail (P/F) tests on each NVM cell of the NVM array are performed. A bit error rate is calculated based on the current distribution and the first and second P/F tests.

Chip testing device and chip testing system for testing memory chips
11366155 · 2022-06-21 · ·

A chip testing device and a chip testing system are provided. The chip testing system includes a chip testing device and a plurality of environment control apparatuses. A plurality of electrical connection sockets are disposed on one side of a circuit board, and a plurality of testing modules are disposed on another side of the circuit board. A first fixing member and a second fixing member fix the electrical connection sockets on one side of the circuit board, and no screwing members are required to be screwed between the electrical connection sockets and the circuit board. Each of the electrical connection sockets with a chip disposed thereon can be disposed in a high temperature environment or a low temperature environment for testing along with the chip testing device, so that each of the chips does not need to be detached repeatedly.

Memory system
11357106 · 2022-06-07 · ·

According to one embodiment, in a memory system, a printed circuit board a first end portion and a second end portion. The second end portion is a portion arranged in an opposite side of the first end portion. Both of a semiconductor memory and a controller are disposed on the first surface. A edge connector is connectable to a host device and is disposed in the first end portion. Plural through-hole portions are disposed in the second end portion. Each of the plural through-hole portions penetrates from the first surface to the second surface. Each of the plural through-hole portions has an inner surface covered with an electrically-conductive film. Plural pad electrodes are disposed on the second surface in the second end portion. At least some of the plural through-hole portions are electrically connected to the controller. At least some of the plural pad electrodes are electrically connected to the controller.

SCAN SYNCHRONOUS-WRITE-THROUGH TESTING ARCHITECTURES FOR A MEMORY DEVICE

An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device. The memory device thereafter passes through the serial input sequence of data or the parallel input sequence of data to provide an output sequence of data in the shift mode of operation or the capture mode of operation or passes through the serial input sequence of data to provide a serial output sequence of scan data in the scan mode of operation.

Carrier based high volume system level testing of devices with pop structures

A testing apparatus comprises a tester comprising a plurality of racks, wherein each rack comprises a plurality of slots, wherein each slot comprises: (a) an interface board affixed in a slot of a rack, wherein the interface board comprises test circuitry and a plurality of sockets, each socket operable to receive a device under test (DUT); and (b) a carrier comprising an array of DUTs, wherein the carrier is operable to displace into the slot of the rack; and (c) an array of POP memory devices, wherein each POP memory device is disposed adjacent to a respective DUT in the array of DUTs. Further, the testing apparatus comprises a pick-and-place mechanism for loading the array of DUTs into the carrier and an elevator for transporting the carrier to the slot of the rack.

Shared error correction coding circuitry

Methods, systems, and devices for shared error correction coding (ECC) circuitry are described. For example, a memory device configured with shared ECC circuitry may be configured to receive data at the shared circuitry from either a host device or a set of memory cells of the memory device. The shared circuitry may be configured to generate a set of multiple syndromes associated with a cyclic error correction code, based on the received data. As part of an encoding process, an encoder circuit may generate a set of parity bits based on the generated syndromes. As part of a decoding process, a decoder circuit may generate an error vector for decoding the received data, based on the generated syndromes. The decoder circuit may also correct one or more errors in the received data based on generating the error vector.

Scan synchronous-write-through testing architectures for a memory device

An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device. The memory device thereafter passes through the serial input sequence of data or the parallel input sequence of data to provide an output sequence of data in the shift mode of operation or the capture mode of operation or passes through the serial input sequence of data to provide a serial output sequence of scan data in the scan mode of operation.

MULTIPLE-NAME-SPACE TEST SYSTEMS AND METHODS
20230259435 · 2023-08-17 ·

Presented embodiments facilitate efficient and effective flexible implementation of different types of testing procedures in a test system. In one embodiment, a multiple-name-space testing system comprises a load board, testing electronics, and a namespace testing tracker. The load board is configured to couple with a plurality of devices under test (DUTs). The testing electronics are configured to test the plurality of DUTs, wherein the testing electronics are coupled to the load board. The controller is configured to direct testing of multiple-name-spaces across the plurality of DUTs at least in part in parallel. The controller can be coupled to the testing electronics. The namespace testing tracker is configured to track testing of the plurality of DUTs, including the testing of the multiple-name-spaces across the plurality of DUTs at least in part in parallel. In one embodiment, the DUTs are NVMe SSD devices.

Memory test method
11327866 · 2022-05-10 · ·

A memory test method for being implemented by storing corresponding test result data and test parameter data into memory chips when a burn-in test, a high temperature test, a low temperature test, and a normal temperature test are performed on the memory chips. A memory test method for being implemented by storing the corresponding test result data and the test parameter data into the memory chips after the memory chips finish the burn-in test, the high temperature test, the low temperature test, and the normal temperature test. The memory chips can internally store the test result data and the test parameter data after finishing tests through the memory test method of the present disclosure so that relevant personnel can read data to easily trace back test history of the memory chips.