The present disclosure relates to an electronic device. According to the present disclosure, a storage device includes a memory controller acquiring a valid address reflecting a bad block more quickly and a plurality of memory devices each including a plurality of memory blocks included in each of a plurality of planes.

An apparatus for controlling an operation in a memory system includes a volatile memory including plural memory cells, a column data checking circuitry configured to determine whether all pieces of data outputted from memory cells corresponding to a bit line are identical to each other, and an error correction circuitry configured to determine whether the pieces of data include an error based at least on a type of data, a state of data, and an output of the column data checking circuitry, and to resolve the error.

Methods, systems, and devices for adjustable column address scramble using fuses are described. A testing device may detect a first error in a first column plane of a memory array and a second error in a second column plane of the memory array. The testing device may identify a first column address of the first column plane associated with the first error and a second column address of the second column plane based on detecting the first error and the second error. The testing device may determine, for the first column plane, a configuration for scrambling column addresses of the first column plane to different column addresses of the first column plane. In some cases, the testing device may perform a fuse blow of a fuse associated with the first column plane to implement the determined configuration.

According to one embodiment, there is provided a memory system including a non-volatile memory and a controller. The non-volatile memory includes a plurality of physical blocks. The controller is connected to any of the plurality of physical blocks via a plurality of channels. The controller is configured to construct a plurality of logical blocks and, read or write data from or into any of the plurality of logical blocks constructed. The logical blocks are management units in which any of the physical blocks is grouped across the plurality of channels. The controller is configured to construct the plurality of logical blocks so that a first number of defective blocks and a second number of pseudo defective blocks for shortfall defective blocks with respect to a target number of defective blocks are distributed into the plurality of logical blocks.

A memory-control logic, disposed in a memory circuit, is provided. The memory circuit includes a memory-cell array that is divided into a plurality of regions that include a damaged region. The memory-control logic includes a one-time-programmable (OTP) memory array, an array-control circuit, and an address-redirecting circuit. The array-control circuit programs a memory-size type of the memory-cell array, a region-failure flag corresponding to each region, and a redirecting mapping table corresponding to each region in the OTP memory array. The array-control circuit programs the redirecting mapping table corresponding to each region according to the memory-size type to direct the redirecting mapping table corresponding to each damaged region to non-repetitive good regions. The address-redirecting circuit converts the address signal into a first redirected address signal according to the redirecting mapping table corresponding to each region, and inputs the redirected address signal into the memory-cell array.

A method for dynamically handling the failure of the static random-access memory (SRAM) dynamic failure handling system using a cyclic redundancy check (CRC) includes obtaining a write data; determining a write address; storing the write data at the write address of a frame memory which is composed of the SRAM and includes a real address area and a spare address area which are distinguished from each other; storing, in response to the write address, a write cyclic redundancy check (CRC) generated by performing a CRC calculation on the write data; determining a read address; reading a read data from the read address of the frame memory; determining whether, based on the A CRC remainder W_CRC corresponding to the read address and the read data, a CRC error occurs, and generating an error flag when the CRC error occurs; determining a fault address based on the error flag; and mapping the fault address to one of non-fault spare addresses of the spare address area when the fault address is an address of the real address area.

A data processing circuit and a fault mitigating method are provided. The method is adapted for a memory having at least one fault bit. The memory provides a block for data storage. A difference between an output of a value of a plurality of bits input to at least one computing layer in a neural network and a correct value is determined. The bits are respectively considered the at least one fault bit. A repair condition is determined based on the difference. The repair condition includes a correspondence between a position where the fault bit is located in the block and at least one non-fault bit in the memory. A value of at least one non-fault bit of the memory replaces a value of the fault bit based on the repair condition.

A memory device may include: a memory bank comprising a first cell mat used as a normal area and a second cell mat used as a row hammer area and a redundancy area; a target address generation circuit suitable for: saving, in the row hammer area, a count of a received address for an active operation on the memory bank by performing an internal access operation on the row hammer area during the active operation, and setting, a particular count which satisfies a preset condition, an address corresponding to the particular count as a target address; a refresh control circuit suitable for controlling a smart refresh operation on the target address; and a column repair circuit suitable for repairing, when a bit line of the normal area has a defect, the bit line of the normal area with a bit line of the redundancy area.

An open-channel storage device being configured to be controlled by a host including a bad block manager, the open-channel storage device including a buffer memory and a nonvolatile memory device. An operation method of the open-channel storage device includes performing a normal operation under control of the host, detecting a sudden power-off immediately after a program failure associated with a first data block among a plurality of memory blocks included in the nonvolatile memory device while the normal operation is performed, dumping a plurality of user data stored in the buffer memory to a dump block among the plurality of memory blocks in response to the detected sudden power-off, detecting a power-on, and performing a data recovery operation on the plurality of user data stored in the dump block in response to the detected power-on.

A system and method for virtually addressing an array of accelerator tiles of a mixed-signal integrated circuit includes testing each of a plurality of distinct matrix multiply accelerator (MMA) tiles of a grid of MMA tiles, the grid of MMA tiles being defined by the plurality of distinct grid of MMA tiles being arranged in a plurality of rows and a plurality of columns along an integrated circuit, each of the plurality of distinct MMA tiles within the grid of MMA tiles having a distinct physical address on the integrated circuit; identifying one or more defective MMA tiles within the grid of MMA tiles based on the testing; and configuring the grid of MMA tiles with a plurality of virtual addresses for routing data to or routing data from one or more non-defective MMA tiles of grid of MMA tiles based on identifying the one or more defective MMA tiles.