A memory system includes a memory array including a plurality of memory cells, and an encoder operatively coupled to the memory array, for encoding an original data element to be programmed into the memory cells into a uniform data element in which the number of 0s approximately equals the number of 1s.

A memory system includes a memory array including a plurality of memory cells, and an encoder operatively coupled to the memory array, for encoding an original data element to be programmed into the memory cells into a uniform data element in which the number of 0s approximately equals the number of 1s.

The present disclosure includes apparatuses and methods for sensing a resistance variable memory cell. A number of embodiments include circuitry to provide a programming signal to a memory cell in the array, the programming signal associated with programming the memory cell to a particular data state; and determine, via an integration component, if a data state of the memory cell changes to a different data state responsive to the programming signal being provided.

A semiconductor device includes a memory cell; circuitry that generates a reference voltage; and a sense amplifier including a first input terminal electrically connected to the memory cell, and a second input terminal electrically connected to the circuitry. The sense amplifier obtains a value in correlation with a resistance value of the memory cell based on a comparison between a sense voltage applied to the first input terminal and the reference voltage applied to the second input terminal. The sense voltage changes at a speed in correlation with the resistance value of the memory cell. In at least part of a period during which the sense voltage changes, the circuitry causes the reference voltage to change in a direction opposite to a direction in which the sense voltage changes.