A memory device includes a memory cell array and a data input and output circuit configured to output a data signal (DQ signal) including data read from the memory cell array and a data strobe signal (DQS signal) including a toggle pattern associated with an operating condition of the memory device based on n-level pulse amplitude modulation (PAMn), wherein n is an integer greater than or equal to 4.

According to one embodiment, a data buffer is described. The data buffer comprises a first input/output circuit configured to receive and provide a first signal encoded according to a first communications protocol, a second input/output circuit configured to receive and provide a second signal encoded according to a second communications protocol, and a conversion circuit coupled to the first and second input/output circuits and configured to convert the first signal to the second signal and to convert the second signal to the first signal.

Methods, systems, and devices for multiplexing distinct signals on a single pin of a memory device are described. Techniques are described herein to multiplex data using a modulation scheme having at least three levels. The modulated data may be communicated to multiple memory dies over a shared bus. Each of the dies may include a same or different type of memory cell and, in some examples, a multi-level signaling scheme may be pulse amplitude modulation (PAM). Each unique symbol of the modulated signal may be configured to represent a plurality of bits of data.

Methods, systems, and devices for multiplexing distinct signals on a single pin of a memory device are described. Techniques are described herein to multiplex data using a modulation scheme having at least three levels. The modulated data may be communicated to multiple memory dies over a shared bus. Each of the dies may include a same or different type of memory cell and, in some examples, a multi-level signaling scheme may be pulse amplitude modulation (PAM). Each unique symbol of the modulated signal may be configured to represent a plurality of bits of data.

According to one embodiment, a data buffer is described. The data buffer comprises a first input/output circuit configured to receive and provide a first signal encoded according to a first communications protocol, a second input/output circuit configured to receive and provide a second signal encoded according to a second communications protocol, and a conversion circuit coupled to the first and second input/output circuits and configured to convert the first signal to the second signal and to convert the second signal to the first signal.

According to one embodiment, A data buffer is described. The data buffer comprises a first input/output circuit configured to receive and provide a first signal encoded according to a first communications protocol, a second input/output circuit configured to receive and provide a second signal encoded according to a second communications protocol, and a conversion circuit coupled to the first and second input/output circuits and configured to convert the first signal to the second signal and to convert the second signal to the first signal.

A driver of a multi-level signaling interface is provided. The driver may be configured reduce noise in a multi-level signal (e.g., a pulse amplitude modulation signal) generated by the driver using switching components of different polarities. The driver may include a pull-up circuit and/or a pull-down circuit. The pull-up circuit and the pull-down circuit may include at least one switching component of a first polarity (e.g., nmos transistor) and at least one switching component of a second polarity different from the first polarity (e.g., pmos transistor). Such a configuration of pull-up and pull down circuits may generate a more linear relationship between an output current and an output voltage of an output of the driver, thereby improving one or more characteristics of the multi-level signal.

A driver of a multi-level signaling interface is provided. The driver may be configured reduce noise in a multi-level signal (e.g., a pulse amplitude modulation signal) generated by the driver using switching components of different polarities. The driver may include a pull-up circuit and/or a pull-down circuit. The pull-up circuit and the pull-down circuit may include at least one switching component of a first polarity (e.g., nmos transistor) and at least one switching component of a second polarity different from the first polarity (e.g., pmos transistor). Such a configuration of pull-up and pull down circuits may generate a more linear relationship between an output current and an output voltage of an output of the driver, thereby improving one or more characteristics of the multi-level signal.

An apparatus includes a control circuit that is configured to connect to an array of non-volatile memory cells. The control circuit includes a first plurality of data latches configured to connect to non-volatile memory cells of a first plane and a second plurality of data latches configured to connect to non-volatile memory cells of a second plane. The control circuit also includes a shared data transfer data latch configured for transfer of data with the first plurality of data latches and the second plurality of data latches.

Methods, systems, and devices for multiplexing distinct signals on a single pin of a memory device are described. Techniques are described herein to multiplex data using a modulation scheme having at least three levels. The modulated data may be communicated to multiple memory dies over a shared bus. Each of the dies may include a same or different type of memory cell and, in some examples, a multi-level signaling scheme may be pulse amplitude modulation (PAM). Each unique symbol of the modulated signal may be configured to represent a plurality of bits of data.