Methods, systems, and devices for stacked memory dice and combined access operations are described. A device may include multiple memory dice. One die may be configured as a master, and another may be configured as a slave. The master may communicate with a host device. A slave may be coupled with the master but not the host device. The device may include a first die (e.g., master) and a second die (e.g., slave). The first die may be coupled with a host device and configured to output a set of data in response to a read command. The first die may supply a first subset of the data and obtain a second subset of the data from the second die. In some cases, the first die may select, based on a data rate, a modulation scheme (e.g., PAM4, NRZ, etc.) and output the data using the selected modulation scheme.

A memory access command, column address and plurality of write data values are received within an integrated-circuit memory chip via external signaling links. In response to the memory access command, the integrated-circuit memory chip (i) decodes the column address to select address-specified sense amplifiers from among a plurality of sense amplifiers that constitute a sense amplifier bank, (ii) reads first data, constituted by a plurality of read data values, out of the address-specified sense amplifiers, and (iii) overwrites the first data within the address-specified sense amplifiers with second data constituted by one or more of the write data values and by one or more of the read data values.

Apparatuses for providing pads included in external terminals of a semiconductor device are described. An example apparatus includes a memory cell array, a data queue (DQ) circuit, a data pad and a power pad. The memory cell array may include one or more memory cells. In a write operation, the data pad receives write data and provides the write data to the DQ circuit. The DQ circuit receives the write data and provides the write data to the memory cell array. In a read operation, the DQ circuit receives read data from the memory cell array and provides the read data. The data pad receives the read data from the DQ circuit and provides the read data. The power pad provides a power supply voltage. The data pad and the power pad are disposed across from each other with respect to the DQ circuit.

A semiconductor system includes a first semiconductor device and a second semiconductor device. The first semiconductor device outputs a chip selection signal, a command signal, and data. The second semiconductor device generates internal data from the data, stores the internal data, and stores the data as pattern data when the chip selection signal is enabled and a write operation is performed according to a logic level combination of the command signal. In addition, the second semiconductor device generates the internal data from the pattern data and stores the internal data without receiving the data when the chip selection signal is enabled and a write copy operation is performed according to a logic level combination of the command signal.

A stacked semiconductor device includes a base die including an input buffer and a parallel circuit; and a plurality of core dies stacked over the base die, the core dies coupled to the base die through a plurality of through-electrodes, wherein the input buffer receives write data in a first order and a write inversion signal, the parallel circuit sorts consecutive bits of the write data to be positioned adjacent to each other so that the write data becomes first parallel data and to transfer the first parallel data to respective first to n-th internal input/output lines, and each of the core dies includes an input control circuit to re-sort the first parallel data transferred via the respective first to n-th internal I/O lines into the write data and a write inversion circuit to selectively invert the re-sorted write data according to the write inversion signal.

Disclosed herein is a method for designing a semiconductor device, the method including: assigning a plurality of wiring tracks including first and second tracks; connecting a first data I/O circuit to a first data node of a first circuit by a first signal bus arranged on the first wiring track; connecting a second data I/O circuit to a second data node of the first circuit by a second signal bus arranged on the second wiring track when a first design mode is selected; and connecting the first data I/O circuit to a second circuit by a second signal bus arranged on the second wiring track when a second design mode is selected.

An memory component includes a memory bank and a command interface to receive a read-modify-write command, having an associated read address indicating a location in the memory bank and to either access read data from the location in the memory bank indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received or to overlap multiple read-modify-write commands. The memory component further includes a data interface to receive write data associated with the read-modify-write command and an error correction circuit to merge the received write data with the read data to form a merged data and write the merged data to the location in the memory bank indicated by the read address.

Methods, systems, and devices for stacked memory dice and combined access operations are described. A device may include multiple memory dice. One die may be configured as a master, and another may be configured as a slave. The master may communicate with a host device. A slave may be coupled with the master but not the host device. The device may include a first die (e.g., master) and a second die (e.g., slave). The first die may be coupled with a host device and configured to output a set of data in response to a read command. The first die may supply a first subset of the data and obtain a second subset of the data from the second die. In some cases, the first die may select, based on a data rate, a modulation scheme (e.g., PAM4, NRZ, etc.) and output the data using the selected modulation scheme.

Disclosed is a method of performing, at a controller, an access to a memory device, which includes transmitting, at the controller, a first command signal, a first address signal, and a first swizzling signal to the memory device, selecting first data bits stored in a memory cell array of the memory device based on the first command signal and the first address signal, and sequentially outputting, at the memory device, at least a part of the first data bits to the controller in a burst manner, based on the first swizzling signal.

An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices.