A memory device having a DRAM core and a register stores first data in the register before receiving first and second memory access commands via a command interface and before receiving second data via a data interface. The memory device responds to the first memory access command by writing the first data from the register to the DRAM core and responds to the second memory access command by writing the second data from the data interface to the DRAM core.

Voltages loaded onto the bit lines in a first CA section of a memory array can be latched by enabling the BLSA between the first section and a second section adjacent to the first section causing latched voltages to propagate to bit lines in the second section. Voltages propagated to the bit lines in the second section using the latches between the second section and a third section. Voltages can be propagated sequentially from section to subsequent adjacent section until a target location is reached. The scheme can be applied as a method of page-data write access in a memory chip, of which page data can be propagated sequentially from section to subsequent adjacent section until a target location is reached, and then, activating a word line in a section of the memory comprising the target location to write voltages to the memory cells at the target location.

Voltages loaded onto the bit lines in a first CA section of a memory array can be latched by enabling the BLSA between the first section and a second section adjacent to the first section causing latched voltages to propagate to bit lines in the second section. Voltages propagated to the bit lines in the second section using the latches between the second section and a third section. Voltages can be propagated sequentially from section to subsequent adjacent section until a target location is reached. The scheme can be applied as a method of page-data write access in a memory chip, of which page data can be propagated sequentially from section to subsequent adjacent section until a target location is reached, and then, activating a word line in a section of the memory comprising the target location to write voltages to the memory cells at the target location.

Disclosed herein is an apparatus that includes a first power ESD protection circuit arranged in a first circuit area; a plurality of data I/O circuits arranged in a second circuit area adjacent to the first circuit area in a first direction; a plurality of data I/O terminals arranged in the second circuit area, each of the plurality of data I/O terminals being coupled to an associated one of the plurality of data I/O circuits; a plurality of first power terminals arranged in the second circuit area; and a first power line extending in the first direction, the first power line coupling the plurality of first power terminals to the first power ESD protection circuit.

Disclosed herein is an apparatus that includes a first power ESD protection circuit arranged in a first circuit area; a plurality of data I/O circuits arranged in a second circuit area adjacent to the first circuit area in a first direction; a plurality of data I/O terminals arranged in the second circuit area, each of the plurality of data I/O terminals being coupled to an associated one of the plurality of data I/O circuits; a plurality of first power terminals arranged in the second circuit area; and a first power line extending in the first direction, the first power line coupling the plurality of first power terminals to the first power ESD protection circuit.

Disclosed herein is an apparatus that includes a data serializer including a plurality of first buffer circuits configured to receive a plurality of data, respectively, and a second buffer circuit configured to serialize the plurality of data provided from the plurality of first buffer circuits. At least one of the plurality of first buffer circuits and the second buffer circuit includes: a first circuit configured to drive a first signal node to one of first and second logic levels based on an input signal, the first circuit including a first adjustment circuit configured to adjust a driving capability of the first circuit when the first circuit drives the first signal node to the first logic level; and a second circuit configured to drive the first signal node to other of the first and second logic levels.

A memory system includes a dynamic random access memory (DRAM) device, a second memory device, and a memory controller circuit. The memory controller circuit is coupled to the DRAM device by a first data channel configured to transfer first data between the memory controller circuit and the DRAM device on behalf of a host, and is also coupled to the DRAM device by a second data channel configured to transfer second data between the memory controller circuit and the DRAM device on behalf of the second memory device while the first data is being transferred across the first data channel.

An apparatus for enhancing prefetch access in a memory module may include a memory chip. The memory chip includes a memory cell array, a plurality of bit lines and a plurality of word lines, a plurality of BLSAs, and a plurality of main data lines. The memory cell array may be arranged to store data, and the plurality of bit lines and the plurality of word lines may be arranged to perform access control of the memory cell array. The plurality of BLSAs may sense a plurality of bit-line signals restored from the plurality of memory cells and convert the plurality of bit-line signals into a plurality of amplified signals, respectively. The main data lines may directly output the amplified signals, through selection of CSLs of the BLSAs on the memory chip, to a secondary semiconductor chip, for performing further processing of the memory module, thereby enhancing the prefetch access.

Methods, apparatuses, and systems related to die-to-die communications are described. An apparatus may include a master die and a set of slave dies communicatively coupled to each other through an internal bus. The master die may be configured to provide a combined external interface for both the master die and the set of slave dies. For the die-to-die communications, a target die may coordinate transfer of communicated data to the internal interface according to a timing signal generated by a source external to the set of slave dies.

A memory device having a DRAM core and a register stores first data in the register before receiving first and second memory access commands via a command interface and before receiving second data via a data interface. The memory device responds to the first memory access command by writing the first data from the register to the DRAM core and responds to the second memory access command by writing the second data from the data interface to the DRAM core.