Methods, apparatuses, and systems related to die-to-die communications are described. An apparatus may include an interfacing die and at least one additional die communicatively coupled to each other through an internal bus. The interfacing die may be configured to provide a combined external interface for the coupled dies. For the die-to-die communications, a target die may coordinate transfer of communicated data to the internal interface according to a timing signal generated by a source external to the at least one additional die.

Page data can be propagated sequentially from a section to the neighboring section, and from this section to subsequent section adjacent to it until a page register set is reached. In a described apparatus based on this page-data-copy scheme, access data from a page register (which is also used for storing the data accessed using the page-data-copy scheme) with a conditional read-access method in conjunction with an arithmetic unit can execute the arithmetic process of an AI system.

Disclosed is a method of performing, at a controller, an access to a memory device, which includes transmitting, at the controller, a first command signal, a first address signal, and a first swizzling signal to the memory device, selecting first data bits stored in a memory cell array of the memory device based on the first command signal and the first address signal, and sequentially outputting, at the memory device, at least a part of the first data bits to the controller in a burst manner, based on the first swizzling signal.

An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices.

A semiconductor storing apparatus capable of performing continuous readout between multiple chips in high speed is provided. A NAND-type flash memory includes the stacked multiple chips. Each of the chips includes: a readout part performing the continuous readout; an output buffer part outputting data readout from the readout part to input/output bus synchronously with a clock signal; and a final page detecting part detecting if readout pages are the final pages of the chips. The output buffer part responds to a detecting result of the final pages under a condition of performing the continuous readout between the chips. After outputting the data of the final pages through a first output buffer with a large driving capability, outputs or holds the data of the final pages through a second output buffer with a little driving capability.

A device including an equalizer that includes a first input configured to receive an input signal, a second input configured to receive a reference signal, and a third input configured to receive an adjustment signal. The equalizer also includes a first output configured to transmit a corrected signal, wherein the corrected signal is generated based on data outputs controlled via the input signal, the reference signal, and a clock signal, wherein the data outputs are modified based on the first adjustment signal, wherein corrected signal offsets inter-symbol interference on the input signal based on a data bit received at the first input prior to reception of the input signal.

A semiconductor apparatus including: a peripheral circuit region and a memory region including a plurality of unit memory blocks coupled to the peripheral circuit region through data lines and control signal lines. The control signal lines having a path configuration configured to equalize a value corresponding to a difference between times required for transferring data from the peripheral circuit region to the plurality of unit memory blocks with another value corresponding to a difference between times required for transferring control signals related to data input/output from the peripheral circuit region to the plurality of unit memory blocks to substantially a same value.

The invention introduces an apparatus for segmenting a data stream, installed in a physical layer, to include a host interface, a data register and a boundary detector. The data register is arranged to operably store data received from the host side through the host interface. The boundary detector is arranged to operably detect the content of the data register. When the data register includes a boundary-lock pattern or a special symbol, the boundary detector outputs a starting address that the boundary-lock pattern or the special symbol is stored in the data register to an offset register to update a value stored in the offset register, thereby enabling a stream splitter to divide data bits of the data register according to the updated value of the offset register.

Apparatuses and methods for writing data to a memory array are disclosed. When data is duplicative across multiple data lines, data may be transferred across a single line of a bus rather than driving the duplicative data across all of the data lines. The data from the single data line may be provided to the write amplifiers of the additional data lines to provide the data from all of the data lines to be written to the memory. In some examples, error correction may be performed on data from the single data line rather than all of the data lines.

Stacked semiconductor die assemblies having memory dies stacked between partitioned logic dies and associated systems and methods are disclosed herein. In one embodiment, a semiconductor die assembly can include a first logic die, a second logic die, and a thermally conductive casing defining an enclosure. The stack of memory dies can be disposed within the enclosure and between the first and second logic dies.