A vehicle information communication system includes a vehicle device and a center device. The center device includes a storage unit, a center computer, and a center-device communication unit. The storage unit stores memory structure information for each of the ECUs. The memory structure information indicates whether a corresponding memory has a memory structure that supports Read While Write (RWW) operation defined as having a plurality of physically independent memory regions. The center computer is programmed to generate specification data including the memory structure information for each of the at least one target ECUs. The vehicle device includes a vehicle computer. The vehicle computer is programmed to perform the program data rewrites of the at least one target ECU according to the memory structure information included in the specification data.

Various implementations described herein refer to a method for providing single port memory with a bitcell array arranged in columns and rows. The method may include coupling a wordline to the single port memory including coupling the wordline to the columns of the bitcell array. The method may include performing multiple memory access operations concurrently in the single port memory including performing a read operation in one column of the bitcell array using the wordline while performing a write operation in another column of the bitcell array using the wordline, or performing a write operation in one column of the bitcell array using the wordline while performing a read operation in another column of the bitcell array using the same wordline.

A memory device includes a memory array comprising a plurality of planes, a primary plane driver circuit comprising components to support read operations, program operations, and erase operations on any of the plurality of planes, and a secondary plane driver circuit comprising components to support read operations on an associated one of the plurality of planes. The primary plane driver circuit is configured to perform a first read operation on a first plane of the plurality of planes and the secondary plane driver circuit is configured to perform a second read operation on a second plane of the plurality of planes concurrently with the first read operation.

Some embodiments include apparatuses and methods of using the apparatuses. One of the apparatuses includes a substrate, a first deck including first memory cell strings located over the substrate, a second deck including second memory cell strings and located over the first deck, first data lines located between the first and second decks and coupled to the first memory cell strings, second data lines located over the second deck and coupled to the second memory cell strings, and first and second circuitries. The first and second data lines extending in a direction from a first portion of the substrate to a second portion of the substrate. The first buffer circuitry is located in the first portion of the substrate under the first memory cell strings of the first deck and coupled to the first data lines. The second buffer circuitry is located in the second portion of the substrate under the first memory cell strings of the first deck and coupled to the second data lines.

A memory device includes a first memory area including a first memory cell array having a plurality of first memory cells and a first peripheral circuit disposed below the first memory cell array; a second memory area including a second memory cell array having a plurality of second memory cells and a second peripheral circuit disposed below the second memory cell array; and a pad area including a power wiring. The first and second memory areas respectively include first and second local lockout circuits separately determining whether to lock out of each of the memory areas. The first and second memory areas are included in a single semiconductor chip to share the pad area, and the first and second memory areas operate individually. Accordingly, in the memory device, unnecessary data loss may be reduced by selectively stopping an operation of only a memory area requiring recovery.

A memory circuit includes a plurality of word lines, a word line driver coupled to the plurality of word lines, and a booster circuit coupled to the plurality of word lines. The word line driver is configured to output a first word line signal on a first word line of the plurality of word lines, and the booster circuit includes a first node configured to carry a first power supply voltage and is configured to couple the first word line of the plurality of word lines to the first node responsive to a pulse signal and the first word line signal.

A pseudo-triple-port memory is provided that includes a plurality of pseudo-triple-port bitcells, each pseudo-triple-port first bitcell having a first read port including a first word line coupled to a first bit line through a first access transistor, a second read port including a second word line coupled to a second bit line through a second access transistor, and a write port including both the word lines, both the bit lines, and the pair of access transistors.

A memory device includes a memory array comprising a plurality of planes, a primary plane driver circuit comprising components to support read operations, program operations, and erase operations on any of the plurality of planes, and a secondary plane driver circuit comprising components to support read operations on an associated one of the plurality of planes. The primary plane driver circuit is configured to perform a first read operation on a first plane of the plurality of planes and the secondary plane driver circuit is configured to perform a second read operation on a second plane of the plurality of planes concurrently with the first read operation.

A non-volatile memory device includes a plurality of memory cells arranged in a matrix, a plurality of word lines extended in a row direction, and a plurality of bit lines extended in a column direction. Each of the memory cells is coupled to one of the word lines and one of the bit lines. The memory device further includes a word-line control circuit coupled to and configured to control the word lines, a first bit-line control circuit configured to control the bit lines and sense the memory cells in a digital mode, and a second bit-line control circuit configured to bias the bit lines and sense the memory cells in an analog mode. The first bit-line control circuit is coupled to a first end of each of the bit lines. The second bit-line control circuit is coupled to a second end of each of the bit lines.

Apparatuses and methods can be related to performing operations in memory. Operations can be performed in the background while the memory is performing different operations. For example, comparison operations can be performed by the memory device while the memory device is reading data. The results of the comparison operations can be stored in registers of the memory device. The registers can be made accessible externally to the memory device.