Time division peak power management in non-volatile memory systems is disclosed. The memory system has a memory controller and a number of semiconductor dies. Each die is assigned a time slot in which to perform high current portions of memory operations. The memory controller provides an external clock to each die. Each die tracks repeating time slots based on the external clock. The memory controller may synchronize this tracking. If a die is about to perform a high current portion of a memory operation, the die checks to determine if its allocated slot has been reached. If not, the die halts the memory operation until its allocated time slot is reached. When the allocated time slot is reached, the halted memory operation is resumed at the high current portion. Therefore, the high current portion of the memory operation occurs during the allocated time slot.

Systems and methods are disclosed, including rebuilding a logical-to-physical (L2P) data structure of a storage system subsequent to relocating assigned marginal group of memory cells of a memory array of the storage system, such as when resuming operation from a low-power state, including an asynchronous power loss (APL).

In a memory component having a command/address interface, timing interface and data interface, the command/address interface receives a first command/address value from a control component during a first interval and a second command/address value from the control component during a second interval. The timing interface receives a data strobe from the control component during the first interval and a data clock from the control component during the second interval, the data strobe departing from a parked voltage level to commence toggling at a time corresponding to reception of the first command/address value, and the data clock toggling throughout the second interval regardless of second command/address value reception-time. The data interface samples first write data corresponding to the first command/address value at times indicated by toggling of the data strobe, and samples second write data corresponding to the second command/address value at times indicated by toggling of the data clock.

A system can include a memory device and a processing device to perform operations that include detecting a transition associated with the memory device from a first power state to a second power state. Responsive to detecting the transition from the first power state to the second power state, the operations include determining a value of a scan frequency in view of the second power state, wherein one or more scan iterations are initiated in accordance with the value of the scan frequency. The operations further include performing one or more block family calibration operations in accordance with the value of the scan frequency,

A semiconductor memory device can appropriately control operation timing, based on changes in the environment (for example, power supply voltage and temperature, etc.) when in use. The semiconductor memory device includes a temperature sensor 18 that detects the temperature of the semiconductor memory device, a voltage detection portion (composed of a ring oscillator 14 and a counter 15) that detects the power supply voltage of the semiconductor memory device, and a control portion 10 that controls the operation timing in the semiconductor memory device to meet specific conditions, according to the temperature detected by the temperature sensor 18 after the power is applied and the voltage detected by the voltage detection portion after the power is applied.

In an apparatus, a memory controller, a memory device, and a method for switching frequencies of clock signals to reduce power consumption, when the memory device performs an internal operation according to a command of the memory controller, a frequency of a clock signal of the memory controller is changed. The memory controller switches the frequency of the clock signal to a low frequency according to assertion of a status signal that indicates a busy operation status of the memory device according to the command, and switches the frequency of the clock signal to a high frequency according to de-assertion of the status signal that indicates a ready operation status of the memory device.

Apparatuses and methods for controlling internal current are disclosed herein, An example apparatus includes a semiconductor device including a power node. The semiconductor device receives power as an internal current, and further operates in a first mode and a second mode. The semiconductor device consumes more power in the second mode than in the first mode. The semiconductor device consumes a first portion of the internal current and provides a second portion of the internal current as an external current at the power node during the first mode. The semiconductor device consumes a third portion of the internal current that is greater than the first portion of the internal current during the second mode.

Discussed herein are systems and methods for compensating degradation of a transistor in a high-voltage (HV) shifter configured to transfer an input voltage to an access line, such as a global wordline. An embodiment of a memory device comprises a group of memory cells, and a HV shifter circuit including a signal transfer circuit and a compensator circuit. The signal transfer circuit includes a P-channel transistor to transfer a high-voltage input to an access line. The compensator circuit can provide a control signal to the signal transfer circuit by coupling a support voltage higher than a supply voltage (Vcc) to the signal transfer circuit for a specified time period to compensate for degradation of the P-channel transistor. The transferred high voltage is used to charge the access line to selectively read, program, or erase memory cells.

Methods, systems, and devices for architecture-based power management for a memory device are described. Aspects include operating a first memory bank within a memory device in a first mode and a second memory bank within the memory device in a second mode. The memory device may receive a power down command for the first memory bank while operating the first memory bank in the first mode and the second memory bank in the second mode and switch the first memory bank from the first mode to a first low power mode while maintaining the second memory bank in the second mode. The first low power mode corresponds to less power consumption by the first memory bank than the first mode. In some cases, switching the first memory bank from the first mode to the first low power mode includes deactivating circuitry dedicated to the first memory bank.

A memory device is provided. The memory device includes a cell array having a plurality of cells, each of the plurality of cells operative to store a bit value. The memory device further includes a reset circuit connected to the cell array. The reset circuit is operative to reset, in parallel, the bit value stored in each of the plurality of cells to a predetermined bit value.