A memory device is described, including a command decoder configured to receive a copy command to copy data stored in a first memory location to a second memory location without transmitting the data to an external controller, a memory array electrically connected to the command decoder and including a plurality of memory locations including the first memory location and the second memory location, a data line electrically connected to the memory array and configured to receive, from the first memory location, the data to be transmitted to the second memory location through the same data line, and an output buffer configured to store the data received from the first memory location through the data line to be written into the second memory location without transmitting the data to the external controller.

A semiconductor device includes a read/write control circuit, a core circuit, and a data conversion circuit. The read/write control circuit generates a read strobe signal and a read address from an internal address/command signal based on an internal read command during a self-write operation, generates a write strobe signal after the read strobe signal is generated, and generates a write address from the internal address/command signal. The core circuit is synchronized with the read strobe signal to output read data stored in a bank selected by the read address and is synchronized with the write strobe signal to store write data into the bank or another bank which is selected by the write address. The data conversion circuit changes a pattern of the read data to generate the write data.

Methods, systems, and devices related to content-addressable memory for signal development caching are described. In one example, a memory device in accordance with the described techniques may include a memory array, a sense amplifier array, and a signal development cache configured to store signals (e.g., cache signals, signal states) associated with logic states (e.g., memory states) that may be stored at the memory array (e.g., according to various read or write operations). The memory device may also include storage, such as a content-addressable memory, configured to store a mapping between addresses of the signal development cache and addresses of the memory array. In various examples, accessing the memory device may include determining and storing a mapping between addresses of the signal development cache and addresses of the memory array, or determining whether to access the signal development cache or the memory array based on such a mapping.

The present disclosure provides a writing method, including: writing writing-table data into a corresponding main storage module; performing a calculation on writing-table data in each target main storage module by using a first predetermined algorithm to obtain an auxiliary value, for any target main storage module, the first predetermined algorithm being used for performing a calculation on writing-table data stored in the target main storage module and corresponding writing-table data stored in at least one main storage module other than the target main storage module, an inverse operation of the first predetermined algorithm being used for performing a calculation on any auxiliary value to obtain writing-table data participating in the calculation of the auxiliary value; and storing the auxiliary value into a corresponding auxiliary storage module. The present disclosure further provides a reading method, a computer readable storage medium, a processor chip and an electronic device.

A twelve-transistor (12T) memory cell for a memory device that includes a transmission gate, a cross-coupled inverter circuit operably connected to the transmission gate, and a tri-state inverter operably connected to the cross-coupled inverter circuit. The cross-coupled inverter includes another tri-state inverter cross-coupled to an inverter circuit. Various operations for the 12T memory cell, as well as circuitry to perform the operations, are disclosed.

Methods, systems, and devices related to domain-based access in a memory device are described. In one example, a memory device in accordance with the described techniques may include a memory array, a sense amplifier array, and a signal development cache configured to store signals (e.g., cache signals, signal states) associated with logic states (e.g., memory states) that may be stored at the memory array (e.g., according to various read or write operations). The memory array may be organized according to domains, which may refer to various configurations or collections of access lines, and selections thereof, of different portions of the memory array. In various examples, a memory device may determine a plurality of domains for a received access command, or an order for accessing a plurality of domains for a received access command, or combinations thereof, based on an availability of the signal development cache.

The present disclosure relates to a method for improving the reading and/or writing phase in storage devices including a plurality of non-volatile memory portions managed by a memory controller, comprising: providing at least a faster memory portion having a lower latency and higher throughput with respect to said non-volatile memory portions and being bi-directionally connected to said controller; using said faster memory portion as a read and/or write cache memory for copying the content of memory regions including more frequently read or written logical blocks of said plurality of non-volatile memory portions. A specific read cache architecture for a managed storage device is also disclosed to implement the above method.

The present disclosure includes apparatuses and methods related to copying data in a memory system with an artificial intelligence (AI) mode. An apparatus can receive a command indicating that the apparatus operate in an artificial intelligence (AI) mode, a command to perform AI operations using an AI accelerator based on a status of a number of registers, and a command to copy data between memory devices that are performing AI operations. The memory system can copy neural network data, activation function data, bias data, input data, and/or output data from a first memory device to a second memory device, such that that the first memory device can use the neural network data, activation function data, bias data, input data, and/or output data in a first AI operation and the second memory device can use the neural network data, activation function data, bias data, input data, and/or output data in a second AI operation.

Methods, systems, and devices related to multiplexed signal development in a memory device are described. In one example, an apparatus in accordance with the described techniques may include a set of memory cells, a sense amplifier, and a set of signal development components each associated with one or more memory cells of the set of memory cells. The apparatus may further include a selection component, such as a signal development component multiplexer, that is coupled with the set of signal development components. The selection component may be configured to selectively couple a selected signal development component of the set of signal development components with the sense amplifier, which may support examples of signal development during overlapping time intervals.

The present disclosure includes apparatuses and methods related to copying data in a memory system with an artificial intelligence (AI) mode. An apparatus can receive a command indicating that the apparatus operate in an artificial intelligence (AI) mode, a command to perform AI operations using an AI accelerator based on a status of a number of registers, and a command to copy data between memory devices that are performing AI operations. The memory system can copy neural network data, activation function data, bias data, input data, and/or output data from a first memory device to a second memory device, such that that the first memory device can use the neural network data, activation function data, bias data, input data, and/or output data in a first AI operation and the second memory device can use the neural network data, activation function data, bias data, input data, and/or output data in a second AI operation.