The present disclosure relates to a method for improving the reading and/or writing phase in storage devices including a plurality of non-volatile memory portions managed by a memory controller, comprising: providing at least a faster memory portion having a lower latency and higher throughput with respect to said non-volatile memory portions and being by-directionally connected to said controller; using said faster memory portion as a read and/or write cache memory for copying the content of memory regions including more frequently read or written logical blocks of said plurality of non-volatile memory portions.

A specific read cache architecture for a managed storage device is also disclosed to implement the above method.

An apparatus having a memory array. The memory array having a first section and a second section. The first section of the memory array including a first sub-array of memory cells made up of a first type of memory. The second section of the memory array including a second sub-array of memory cells made up of the first type of memory with a configuration to each memory cell of the second sub-array that is different from the configuration to each cell of the first sub-array. Alternatively, the section can include memory cells made up of a second type of memory that is different from the first type of memory. Either way, the second type of memory or the differently configured first type of memory has memory cells in the second sub-array having less memory latency than each memory cell of the first type of memory in the first sub-array.

Methods, systems, and devices for memory with a virtual page size are described. Memory cells may be accessed in portions or page sizes that are tailored to a particular use or application. A variable page size may be defined that represents a subset or superset of memory cells in a nominal page size for the array. For example, memory cells associated with a page size of a memory array may be accessed with commands to a memory array. Each command may contain a particular addressing scheme based on the page size of the memory array and may activate one or more sets of memory cells within the array. The addressing scheme may be modified based on the page size of the memory array. Upon activating a desired set of memory cells, one or more individual activated cells may be accessed.

Methods, systems, and devices for a magnetic cache for a memory device are described. Magnetic storage elements (e.g., magnetic memory cells, such as spin-transfer torque (STT) memory cells or magnetic tunnel junction (MTJ) memory cells) may be configured to act as a cache for a memory array, where the memory array includes a different type of memory cells. The magnetic storage elements may be inductively coupled to access lines for the memory array. Based on this inductive coupling, when a memory value is written to or read from a memory cell of the array, the memory value may concurrently be written to a magnetic storage element based on associated current through an access line used to write or read the memory cell. Subsequent read requests may be executed by reading the memory value from the magnetic storage element rather than from the memory cell of the array.

A non-volatile memory device includes a memory cell array including a plurality of memory cells, a page buffer circuit, and a control logic circuit. The page buffer circuit includes a plurality of first page buffers and a plurality of second page buffers, each including a sense latch, a data latch, and a cache latch. The sense latch senses data stored in the memory cell array and dumps the sensed data to the data latch, the data latch dumps the data dumped by the sense latch to the cache latch, and the cache latch transmits the data dumped by the data latch to a data I/O circuit. While the cache latch included in at least one of the plurality of first page buffers is performing a data transmit operation, the data latch included in at least one of the plurality of second page buffers performs a data dumping operation.

Disclosed is a nonvolatile memory device, which includes a memory cell array that includes a plurality of memory cells, a page buffer circuit that is connected with the memory cell array through a plurality of bit lines and performs a sensing operation of sensing memory cells selected from the plurality of memory cells through the plurality of bit lines during a sensing time, an input/output circuit that performs a data output operation of outputting data from the page buffer circuit to an external device through data lines, and a sensing time control circuit that adjusts the sensing time when the data output operation is performed during the sensing time.

Embodiments of 3D memory devices with a static random-access memory (SRAM) and fabrication methods thereof are disclosed herein. In one example, the method for operating a 3D memory device having an input/output circuit, an array of SRAM cells, and an array of 3D NAND memory strings in a same chip. The method may include transferring data through the input/output circuit to the array of SRAM cells, storing the data in the array of SRAM cells, and programming the data into the array of 3D NAND memory strings from the array of SRAM cells.

The present disclosure includes apparatuses and methods for simultaneous in data path compute operations. An apparatus can include a memory device having an array of memory cells and sensing circuitry selectably coupled to the array. A plurality of shared I/O lines can be configured to move data from the array of memory cells to a first portion of logic stripes and a second portion of logic stripes for in data path compute operations associated with the array. The first portion of logic stripes can perform a first number of operations on a first portion of data moved from the array of memory cells to the first portion of logic stripes while the second portion of logic stripes perform a second number of operations on a second portion of data moved from the array of memory cells to the second portion of logic stripes during a first time period.

A program method of a non-volatile memory device, the non-volatile memory device including a cell string having memory cells stacked perpendicular to a surface of a substrate, the method includes performing a first program phase including programming a first memory cell connected to a first word line and applying a first pass voltage to other word lines above or below the first word line, and performing a second program phase including programming a second memory cell after the first memory cell is completely programmed, the second memory cell being connected to a second word line closer to the substrate than the first word line, applying a second pass voltage to a first word line group below the second word line and applying a third pass voltage to a second word line group above the second word line, the second pass voltage being lower than the third pass voltage.

Methods, systems, and devices for memory with a virtual page size are described. Memory cells may be accessed in portions or page sizes that are tailored to a particular use or application. A variable page size may be defined that represents a subset or superset of memory cells in a nominal page size for the array. For example, memory cells associated with a page size of a memory array may be accessed with commands to a memory array. Each command may contain a particular addressing scheme based on the page size of the memory array and may activate one or more sets of memory cells within the array. The addressing scheme may be modified based on the page size of the memory array. Upon activating a desired set of memory cells, one or more individual activated cells may be accessed.