Disclosed is a memory device which includes a first memory cell connected to a word line and a first bit line, a second memory cell connected to the word line and a second bit line, and a row decoder selecting the word line, a row decoder configured to select the word line, and a column decoder. A first distance between the row decoder and the first memory cell is shorter than a second distance between the row decoder and the second memory cell. The column decoder selects the first bit line based on a time point when the first memory cell is activated.

Techniques herein may allow a row of a subarray in a bank of a memory device to be activated before a precharge operation has been completed for a previously opened row of memory cells in the same bank. Each subarray within the bank may be associated with a respective local latching circuit, which may be used to maintain phases at the subarray independent of subsequent commands to the same bank. For example, the latching circuit may internalize timing signals triggered by a precharge command for a first row such that if an activation command is received for a different subarray in the same bank at a time before the precharge operation of the first row is complete, the precharge operation may continue until the first row is closed, as the timing signals triggered by the precharge command may be maintained locally at the subarray using the latching circuit.

A data writing control device includes a control signal generator, a data strobe enable signal generator and a data strobe index generator. The control signal generator receives a write command, a preamble setting value and a latency setting value, and generates an internal write pulse and preamble information according to the write command, the preamble setting value and the latency setting value. The data strobe enable signal generator is coupled to the control signal generator and generates a data strobe pipeline enable signal according to the internal write pulse and the preamble setting value. The data strobe index generator is coupled to the data strobe enable signal generator, and generates a plurality of data strobe indexes according to the data strobe pipeline enable signal and the preamble information.

A memory apparatus may include a plurality of ranks commonly coupled to an input/output (I/O) terminal. Non-target ranks other than a target rank among the plurality of ranks may be configured to perform an on die termination operation based on a read operation of the target rank.

One example method includes intercepting an IO issued by an application of a VM, the IO including IO data and IO metadata, storing the IO data in an IO buffer, writing the IO metadata and a pointer, but not the IO data, to a splitter journal in memory, wherein the pointer points to the IO data in the IO buffer, forwarding the IO to storage, and asynchronous with operations occurring along an IO path between the application and storage, evacuating the splitter journal by sending the IO data and the IO metadata from the splitter journal to a replication site.

A storage system allocates single-level cell (SLC) blocks in its memory to act as a write buffer and/or a read buffer. When the storage system uses the SLC blocks as a read buffer, the storage system reads data from multi-level cell (MLC) blocks in the memory and stores the data in the read buffer prior to receiving a read command from a host for the data. When the storage system uses the SLC blocks as a write buffer, the storage system retains certain data in the write buffer while other data is flushed from the write buffer to MLC blocks in the memory.

Methods, systems, and devices for detection of illegal commands are described. A memory device, such as a dynamic random access memory (DRAM), may receive a command from a device, such as a host device, to perform an access operation on at least one memory cell of a memory device. The memory device may determine, using a detection component, that a timing threshold associated with an operation of the memory device would be violated by performing the access operation. The memory device may refrain from executing the access operation based on determining that performing the access operation included in the command would violate the timing threshold. The memory device may transmit, to the device, an indication that performing the command would violate the timing threshold.

A memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller to generate a command for controlling the memory device. The interface circuit receives the command from the controller; determines whether the command is for the semiconductor memory or the interface circuit; and when it is determined that the command is for the interface circuit, performs a blocking operation to block transfer of the command between the interface circuit and the semiconductor memory and performs an internal operation of the interface circuit. The internal operation includes a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.

A storage system allocates single-level cell (SLC) blocks in its memory to act as a write buffer and/or a read buffer. When the storage system uses the SLC blocks as a read buffer, the storage system reads data from multi-level cell (MLC) blocks in the memory and stores the data in the read buffer prior to receiving a read command from a host for the data. When the storage system uses the SLC blocks as a write buffer, the storage system retains certain data in the write buffer while other data is flushed from the write buffer to MLC blocks in the memory.

A hybrid memory system with improved bandwidth is disclosed. In one aspect, a memory system is provided that increases bandwidth relative to the JEDEC low-power double data rate version 5 (LPDDR5) standard. This improvement is made possible by increasing a data conductor count from sixteen to twenty-four. Optionally, the bandwidth may be further improved by increasing a clock frequency from a first value to a second value. This allows the hybrid memory system to provide improved bandwidth without the complications of merely doubling pin counts or doubling clock speed. Further, coding techniques tailored to the pin count and pin layout are provided.