Patent classifications
G
G11
G11C
2213/00
G11C2213/10
G11C2213/11
G11C2213/11
Resistance change element, storage device, and neural network apparatus
According to one embodiment, a resistance change element includes a first electrode, a second electrode, a first transition metal compound layer provided between the first electrode and the second electrode and including lithium ions in lattice site locations, a second transition metal compound layer provided between the first transition metal compound layer and the second electrode and including the lithium ions in the lattice site locations, and a lithium ion conductor layer provided between the first transition metal compound layer and the second transition metal compound layer and being a solid material allowing the lithium ions to pass therethrough and resistant to electrons.