A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.

A pellicle that includes graphene is constructed and arranged for an EUV reticle. A multilayer mirror includes graphene as an outermost layer.

A reflective mirror is provided with a base and a multilayer film including a first layer and a second layer laminated alternately on the base and capable of reflecting at least a portion of incident light. The multilayer film is provided with a first portion having a first thickness, and with a second portion having a second thickness that is different from the first thickness, and which is provided at a position rotationally symmetric to that of the first portion about an optical axis of the reflective mirror.

A reflective mirror is provided with a base and a multilayer film including a first layer and a second layer laminated alternately on the base and capable of reflecting at least a portion of incident light. The multilayer film is provided with a first portion having a first thickness, and with a second portion having a second thickness that is different from the first thickness, and which is provided at a position rotationally symmetric to that of the first portion about an optical axis of the reflective mirror.

A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

A reflective mirror is provided with a base and a multilayer film including a first layer and a second layer laminated alternately on the base and capable of reflecting at least a portion of incident light. The multilayer film is provided with a first portion having a first thickness, and with a second portion having a second thickness that is different from the first thickness, and which is provided at a position rotationally symmetric to that of the first portion about an optical axis of the reflective mirror.

An X-ray optics assembly for an X-ray diffractometer is provided, comprising a multilayer mirror, in particular a Goebel mirror, and a switching system with which beam paths for an X-ray beam are selectable. The X-ray optics assembly includes a monochromator, in particular a channel-cut crystal, and three beam paths for the X-ray beam are selectable using the switching system. A first beam path in a first position of the switching system leads past the multilayer mirror and leads past the monochromator, a second beam path in a second position of the switching system contains the multilayer mirror and leads past the monochromator, and a third beam path in a third position of the switching system contains the multilayer mirror and contains the monochromator. The invention provides an X-ray optics assembly and an X-ray diffractometer which may be used even more universally for various measurement geometries in a simple manner.

A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.

A collector for a projection exposure apparatus for microlithography comprises a plurality of reflective sections which are embodied and arranged in such a way that they can be impinged upon during the focusing of radiation from a first focus into a second focus with angles of impingement in a predefined angular spectrum.