Patent classifications
G21K2201/065
Apparatus and method for irradiation
An apparatus and method for irradiating a fluid containing a material to be irradiated, comprising at least one irradiation chamber having at least one inlet port and outlet port, at least one fluid cooling chamber having at least one inlet port and outlet port, one or more UV radiation sources coupled to the irradiation chamber(s); and at least one heat exchange mechanism thermally coupled to the radiation source(s) and the cooling chamber(s). At least a portion of the interior surface of the cooling chamber(s) may comprise at least a portion of the exterior surface of the irradiation chamber(s) so the cooling chamber(s) is in fluid communication with the irradiation chamber(s).
EXTREME ULTRAVIOLET CHAMBER APPARATUS, EXTREME ULTRAVIOLET LIGHT GENERATION SYSTEM, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
An extreme ultraviolet chamber apparatus includes: a chamber; an EUV condensing mirror arranged in the chamber; a first nozzle arranged in an outer peripheral portion of the EUV condensing mirror and configured to feed a gas in a first direction along a reflective surface of the EUV condensing mirror; a second nozzle arranged in the outer peripheral portion of the EUV condensing mirror and configured to feed a gas in a second direction away from the EUV condensing mirror; and an exhaust port arranged in the chamber.
EXTREME ULTRAVIOLET LIGHT GENERATION DEVICE AND ELECTRONIC DEVICE MANUFACTURING METHOD
An extreme ultraviolet light generation device configured to generate extreme ultraviolet light by irradiating a target containing tin with a pulse laser beam includes a chamber container, a hydrogen gas supply unit configured to supply hydrogen gas into the chamber container, a heat shield disposed between the chamber container and a predetermined region in which the target is irradiated with the pulse laser beam inside the chamber container, a first cooling medium flow path disposed in the chamber container, a second cooling medium flow path disposed in the heat shield, and a cooling device configured to supply a first cooling medium to the first cooling medium flow path and supply a second cooling medium to the second cooling medium flow path so that a temperature of the heat shield becomes lower than a temperature of the chamber container.
Semiconductor apparatus and method of operating the same
A semiconductor apparatus includes a light source, a reflection mirror, and a heat exchanger. The reflection mirror has a reflection surface configured to reflect a light of the light source and a channel behind the reflection surface. The heat exchanger is connected to the channel and configured to circulate a working fluid in the channel.
METHOD FOR PRODUCING A REFLECTIVE OPTICAL ELEMENT, REFLECTIVE OPTICAL ELEMENT, AND USE OF A REFLECTIVE OPTICAL ELEMENT
The disclosure provides a method that includes filling a cavity in a substrate with a second material, wherein the substrate includes a first material. The method also includes using galvanic and/or chemical deposition of a third material to apply an overcoating to a first surface of the substrate in a region of the cavity. The method further includes removing the second material from the cavity. In addition, the method includes, before or after removing the second material from the cavity, applying a reflective layer to the overcoating. The disclosure also provides related optical articles and systems.
APPARATUS AND METHOD FOR IRRADIATION
An apparatus and method for irradiating a fluid containing a material to be irradiated, comprising at least one irradiation chamber having at least one inlet port and outlet port, at least one fluid cooling chamber having at least one inlet port and outlet port, one or more UV radiation sources coupled to the irradiation chamber(s); and at least one heat exchange mechanism thermally coupled to the radiation source(s) and the cooling chamber(s). At least a portion of the interior surface of the cooling chamber(s) may comprise at least a portion of the exterior surface of the irradiation chamber(s) so the cooling chamber(s) is in fluid communication with the irradiation chamber(s).
SEMICONDUCTOR APPARATUS AND METHOD OF OPERATING THE SAME
A semiconductor apparatus includes a light source, a reflection mirror, and a heat exchanger. The reflection mirror has a reflection surface configured to reflect a light of the light source and a channel behind the reflection surface. The heat exchanger is connected to the channel and configured to circulate a working fluid in the channel.
Beam delivery apparatus and method
- Vadim Yevgenyevich Banine ,
- Petrus Rutgerus Bartraij ,
- Ramon Pascal Van Gorkom ,
- Lucas Johannes Peter Ament ,
- Pieter Willem Herman De Jager ,
- Gosse Charles De Vries ,
- Rilpho Ludovicus Donker ,
- Wouter Joep Engelen ,
- Olav Waldemar Vladimir Frijns ,
- Leonardus Adrianus Gerardus Grimminck ,
- Andelko Katalenic ,
- Erik Roelof Loopstra ,
- Han-Kwang NIENHUYS ,
- Andrey Alexandrovich Nikipelov ,
- Michael Jozef Mathijs Renkens ,
- Franciscus Johannes Joseph Janssen ,
- Borgert Kruizinga
A delivery system for use within a lithographic system. The beam delivery system comprises optical elements arranged to receive a radiation beam from a radiation source and to reflect portions of radiation along one or more directions to form a one or more branch radiation beams for provision to one or more tools.
MIRROR, IN PARTICULAR FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
A mirror, in particular for a microlithographic projection exposure apparatus, has an optical effective surface and includes a substrate (11, 61, 71, 81, 91), a reflection layer system (16, 66, 76, 86, 96) for reflecting electromagnetic radiation impinging on the optical effective surface (10a, 60a, 70a, 80a, 90a), an electrode arrangement (13, 63, 73, 83) composed of a first material having a first electrical conductivity, the electrode arrangement being provided on the substrate, and a mediator layer (12, 62, 72, 82, 92) composed of a second material having a second electrical conductivity. The ratio between the first electrical conductivity and the second electrical conductivity is at least 100. The mirror also includes at least one compensation layer (88) which at least partly compensates for the influence of a thermal expansion of the electrode arrangement (83) on the deformation of the optical effective surface (80a).
Method for producing a reflective optical element, reflective optical element, and use of a reflective optical element
The disclosure provides a method that includes filling a cavity in a substrate with a second material, wherein the substrate includes a first material. The method also includes using galvanic and/or chemical deposition of a third material to apply an overcoating to a first surface of the substrate in a region of the cavity. The method further includes removing the second material from the cavity. In addition, the method includes, before or after removing the second material from the cavity, applying a reflective layer to the overcoating. The disclosure also provides related optical articles and systems.