Various embodiments of the present technology may provide in-situ metrology. A system may include a first sensor embedded within a susceptor and flush with a top surface of the susceptor. The system may also include lift pin pads having a second sensor arranged to contact a lift pin. The system may also include a third sensor arranged outside of a reaction chamber and adjacent to a view port. The system may also include a processor to receive output signals from one or more of the sensors and use the output signals to determine a film thickness on a wafer.

The invention concerns an optical monitoring system for the measurement of layer thicknesses of thin coatings applied in a vacuum, particularly on moving substrates, during the coating process, in which the light intensity of the light of a light source injected into a reference light guide and released by a first piezoelectric or electrostrictive or magnetostrictive light chopper is registered by a light detector unit in a reference phase, the light of the light source in a measuring phase is injected into a first measuring light guide and the light released by a second piezoelectric or electrostrictive or magnetostrictive light chopper is directed to the substrate, and the light intensity of the light reflected or transmitted from the substrate is registered by the light detector unit through a second measuring light guide, and a remaining light intensity is registered by the light detector unit in at least one dark phase, wherein the reference phase, the measuring phase, and the dark phase are shifted in time by the light chopper and are digitally adjusted depending on the position of the substrate.

The embodiments of the invention disclose a device for film thickness measurement and a method for film thickness measurement. The device comprises a planar indenter, a collecting unit and a processing unit. The planar indenter comprises a base plate and a piezoelectric film layer. The collecting unit comprises a plurality of collecting circuits evenly distributed above the piezoelectric film layer and spaced from each other. The collecting circuits are used for collecting current signals generated when the piezoelectric film layer deforms at positions corresponding to the collecting circuits. The processing unit is used for calculating a film thickness of the film sample to be measured based on the current signals collected by each of the collecting circuits.

The invention is a tip guard with a removably attachable scraper and/or mil gauge.

Method and apparatus for scanning surfaces of a three-dimensional object employ a first sensor to acquire first data points and a second sensor to acquire second data points. The first sensor has a relatively lower accuracy and faster data point acquisition rate than the second sensor, and the second data points are assigned a higher weighting than the first data points. A three-dimensional coordinate point cloud is generated based on the both the first and second data points and their respective weighting.

An inductive structure may be manufactured with in-situ characterization of dimensions by forming a metal line on a top surface of a semiconductor die, forming a passivation dielectric layer over the metal line, measuring a height profile of a top surface of the passivation dielectric layer as a function of a lateral displacement, forming a magnetic material plate over the passivation dielectric layer, measuring a height profile of a top surface of the magnetic material plate as a function of the lateral displacement, and determining a thickness profile of the magnetic material plate by subtracting the height profile of the top surface of the passivation dielectric layer from the height profile of the top surface of the magnetic material plate. An inductive structure including the magnetic material plate and the metal line is formed.

An inductive structure may be manufactured with in-situ characterization of dimensions by forming a metal line on a top surface of a semiconductor die, forming a passivation dielectric layer over the metal line, measuring a height profile of a top surface of the passivation dielectric layer as a function of a lateral displacement, forming a magnetic material plate over the passivation dielectric layer, measuring a height profile of a top surface of the magnetic material plate as a function of the lateral displacement, and determining a thickness profile of the magnetic material plate by subtracting the height profile of the top surface of the passivation dielectric layer from the height profile of the top surface of the magnetic material plate. An inductive structure including the magnetic material plate and the metal line is formed.