Embodiments of systems and methods for measuring a surface topography of a semiconductor chip are disclosed. In an example, a method for measuring a surface topography of a semiconductor chip is disclosed. A plurality of interference signals each corresponding to a respective one of a plurality of positions on a surface of the semiconductor chip are received by at least one processor. The plurality of interference signals are transformed by the at least one processor into a plurality of spectrum signals each corresponding to the respective one of the positions on the surface of the semiconductor chip. The spectrum signals are classified by the at least one processor into a plurality of categories using a model. Each of the categories corresponds to a region having a same material on the surface of the semiconductor chip. A surface height offset between a surface baseline and at least one of the categories is determined by the at least one processor based, at least in part, on a calibration signal associated with the region corresponding to the at least one of the categories. The surface topography of the semiconductor chip is characterized by the at least one processor based, at least in part, on the surface height offset and the interference signals.

A super-resolution holographic microscope includes a light source configured to emit input light, a diffraction grating configured to split the input light into first diffracted light and second diffracted light, a mirror configured to reflect the first diffracted light, a wafer stage arranged on an optical path of the second diffracted light and on which a wafer is configured to be arranged, and a camera configured to receive the first diffracted light that is reflected by the mirror and the second diffracted light that is reflected by the wafer to generate a plurality of hologram images of the wafer.

Embodiments of systems for classifying interference signals are disclosed. In an example, a system for classifying interference signals includes an interferometer including a light source and a detector, and at least one processor. The interferometer is configured to provide a plurality of interference signals each corresponding to a respective one of a plurality of positions on a surface of a semiconductor chip. A spectrum of the light source is greater than a spectrum of white light. The at least one processor is configured to classify the interference signals into a plurality of categories using a model. Each of the categories corresponds to a region having a same material on the surface of the semiconductor chip.

Exemplary apparatus and method are provided. In particular, an electromagnetic radiation can be emitted with, e.g. a light source arrangement. For example, the light source arrangement can include a cavity and a filter, and a spectrum of the electromagnetic radiation can be controlled, e.g., with such cavity and filter, to have a mean frequency that changes (i) at an absolute rate that is greater than about 100 terahertz per millisecond, and (ii) over a range that is greater than about 10 terahertz. Additionally or alternatively, the light source arrangement can include a frequency shifting device which can shift the mean frequency of the electromagnetic radiation.

A method for optical inspection includes illuminating a patterned polymer layer on a semiconductor wafer with optical radiation over a range of infrared wavelengths, measuring spectral properties of the optical radiation reflected from multiple points on the patterned polymer layer over the range of infrared wavelengths, and based on the measured spectral properties, computing a complex refractive index of the patterned polymer layer.

Provided is an optical interference measuring apparatus including a measuring unit for acquiring an interferogram of an interference wave obtained by irradiating a measuring target and a reference surface with electromagnetic waves and causing reflected waves from a reflecting surface of the measurement target and reflected waves from the reference surface to interfere and a signal processing unit for configuring an intensity profile in the depth direction by performing Fourier transform of the interferogram. The signal processing unit is configured to estimate a parameter for a model formula for an assumed surface count, based on the model formula of an interferogram when it is assumed that the measurement target has a predetermined structure, to select an optimal model by a statistical technique from the model formula to which a parameter estimated for the assumed surface count is applied, and to reconfigure an intensity profile based on the optimal model.

Disclosed is a method and a device for in situ process monitoring and control down to a single pulse measurement during laser processing, like ablation, laser printing additive manufacturing and modification of refractive index. The disclosure relates to laser material processing and to an integrated process monitoring using interference effects of a laser beam or laser pulse.

An optical coherence tomography apparatus includes a branching and merging device that branches a light beam emitted from a wavelength sweeping laser light source into an object light beam and a reference light beam, a balanced photodetector that generates information about a change in an intensity ratio of interference light beams, which are generated by the interference between the object light beam and the reference light beam, wherein the object light beam is scattered from the measurement object after being transmitted through the transparent substrate including a structure that changes a thickness, and a control unit that acquires structural data of the measurement object in a depth direction based on the information about the change in the intensity ratio of the interference light beams and connects the structural data while moving an irradiation position of the object light beam with a position of the above structure as a reference.

Apparatus and methods are presented for enhancing the acquisition speed or performance of Fourier domain optical coherence tomography. In preferred embodiments a plurality of wavelength combs containing interleaved selections of wavelengths from a multi-wavelength optical source are generated and projected onto a sample. In certain embodiments the wavelength combs are projected simultaneously onto a plurality of regions of the sample, while in other embodiments the wavelength combs are projected sequentially onto the sample. Light in the wavelength combs reflected or scattered from the sample is detected in a single frame of a sensor array, and the detected light processed to obtain a tomographic profile of the sample. In preferred embodiments the wavelength comb generator comprises a wavelength interleaver in the form of a retro-reflective prism array for imparting different displacements to different selections of wavelengths from the optical source.

Provided is an ellipsometer including a polarizing optical device configured to separate light, reflected from a sample that is irradiated with illumination light comprising a linearly polarized light, into a first linearly polarized light in a first polarization direction and a second linearly polarized light in a second polarization direction that is orthogonal to the first polarization direction, and a light-receiving optical system configured to calculate an Ψ and Δ, an amplitude ratio and a phase difference of the two polarized light respectively, from an interference fringe formed by interference between the first linearly polarized light and the second linearly polarized light after passing through an analyzing device with transmission axis different from the first polarization direction and the second polarization direction.