Methods and systems for characterizing dimensions and material properties of semiconductor devices by transmission small angle x-ray scatterometry (TSAXS) systems having relatively small tool footprint are described herein. The methods and systems described herein enable Q space resolution adequate for metrology of semiconductor structures with reduced optical path length. In general, the x-ray beam is focused closer to the wafer surface for relatively small targets and closer to the detector for relatively large targets. In some embodiments, a high resolution detector with small point spread function (PSF) is employed to mitigate detector PSF limits on achievable Q resolution. In some embodiments, the detector locates an incident photon with sub-pixel accuracy by determining the centroid of a cloud of electrons stimulated by the photon conversion event. In some embodiments, the detector resolves one or more x-ray photon energies in addition to location of incidence.

A method for predetermining a thickness of a coating which is to be arranged on a substrate is provided. A spray spot is arranged on a surface of the substrate or a test substrate. The volume of the spray spot is determined, and based on the determined volume, the thickness of a layer which is to be applied is worked out. An arrangement for predetermining the thickness of a coating is further provided.

A method of analyzing layer thickness of a multilayer component is provided. The method includes: creating an opening having a predefined geometry partially into the multilayer component at a selected location on a surface of the multilayer component. The multilayer component includes a plurality of material layers including a substrate and a bond coat. The opening exposes each of the plurality of material layers including the substrate. Contrast of the exposed plurality of material layers can be increased. An image is created of the exposed layers in the opening using a digital microscope, and thickness of a bond coat, thickness of a depletion layer\ and/or thickness of an oxide layer is calculated from the image and based on the predefined geometry of the opening. Repairing the opening, allows the multilayer component to be used for an intended purpose after testing, e.g., re-installed and reused in a gas turbine.

An inspection robot, and methods and a controller thereof are disclosed. An inspection robot may include an inspection chassis including a plurality of inspection sensors and coupled to at least one drive module to drive the robot over an inspection surface. The inspection robot may also include a controller including an inspection data circuit to interpret inspection base data, an inspection processing circuit to determine refined inspection data, and an inspection configuration circuit to determine an inspection response value in response to the refined inspection data. The controller may further include an inspection response circuit to, in response to the inspection response value, provide an inspection command value while the inspection robot is interrogating the inspection surface.

A system for analyzing layer thickness of a multilayer component is provided. The system includes: an opening forming device configured to create an opening having a predefined geometry partially into the multilayer component at a selected location on a surface of the multilayer component, where the multilayer component includes a plurality of material layers including a substrate and a bond coat and the opening exposes each of the plurality of material layers, and an imaging device configured to create an image of the exposed plurality of material layers in the opening. The system is configured to calculate at least a thickness of the bond coat of the exposed plurality of material layers from the image and based on the predefined geometry of the opening. The system may also include a repairing device configured to repair the opening, allowing the multilayer component to be used for an intended purpose.

A transmission line monitoring system and central processing facility are used to determine the geometry, such as a height, of one or more conductors of a power transmission line and real-time monitoring of other properties of the conductors.

Techniques, systems and articles are described for preparing electrical cables for connections to a power grid. In one example, a cable-preparation system includes a tool-head mount configured to couple to a cutting-tool head, wherein the cutting-tool head is configured to receive a first portion of an electrical cable and comprises a plurality of rollers and at least one rotatable cutting tool configured to cut at least one layer of the electrical cable; a cable clamp configured to retain a second portion of the electrical cable; and a guide rail extending from the tool-head mount to the cable clamp parallel to a longitudinal axis of the electrical cable, wherein the guide rail guides an axial movement of the cutting-tool head along the electrical cable as the cutting-tool head cuts the one or more layers of the electrical cable.

An optical test system and corresponding method disclosed herein provides highly accurate test data for both sides of a lens simultaneously and efficiently to analyze the surface topography and/or geometric parameters of a lens or lens system. More particularly, the optical test system and corresponding method moves the lens in test plane to align a plurality of points of a test pattern on a lens surface with a vertical axis while probes aligned with the vertical axis and on opposing sides of the lens simultaneously collect wavelength-specific data for both lens surfaces. The optical test system uses the collected wavelength-specific data to produce a surface topography and/or the associated lens geometric parameters for each lens surface.

A system includes a memory and at least one processing device operatively coupled to the memory to facilitate an etch recipe development process by performing a number of operations. The operations include receiving a request to initiate an iteration of an etch process using an etch recipe to etch a plurality of materials each located at a respective one of a plurality of reflectometry measurement points, obtaining material thickness data for each of the plurality of materials resulting from the iteration of the etch process, and determining one or more etch parameters based on the material thickness data.

Provided is a laser processing apparatus configured to machine a corner portion of a machining target object by causing the corner portion to be relatively displaced toward a laser, the laser having an optical axis extending in a predetermined direction, the corner portion being formed by a plurality of adjacent surfaces of the machining target object and including a coating layer comprising a light-transmissive material, the laser processing apparatus including: displacement control means for controlling an actuator such that the machining target object becomes relatively close to or away from the optical axis; a detection unit provided at a position at least outside an irradiation region of the laser, the irradiation region extending in a tubular shape in a plan view intersecting the optical axis, the detection unit being configured to detect intensity of light reaching the position; and detection means for detecting a distance of relative displacement of the machining target object between points of detection of a first intensity and a third intensity as a thickness of the coating layer in a case where the predetermined first intensity, a second intensity smaller than the first intensity, and the third intensity larger than the first intensity are detected in order by the detection unit while the machining target object becomes relatively close to or away from the optical axis.