An oxide layer thickness measurement device according to the present invention stores, for each of layer thickness measurement sub-ranges constituting a layer thickness measurement range, layer thickness conversion information representing a correlation between a layer thickness and an emissivity where a ratio of a change in the emissivity to a change in the layer thickness in the layer thickness measurement sub-range falls within a set extent. Emitting light luminances of a surface of a steel sheet are measured at respective measurement wavelengths different from each other, and a temperature of the surface of the steel sheet is measured to thereby calculate the emissivity at each of the measurement wavelengths. Calculated in connection with the emissivity calculated at each of the measurement wavelength are the layer thickness corresponding to the emissivity at the measurement wavelength, and a ratio at the layer thickness by using the layer thickness conversion information corresponding to the measurement wavelength. The calculated thickness is extracted as a candidate value for an actual layer thickness when the calculated ratio is within the preset extent assigned for the layer thickness conversion information.

The invention relates to an inspection method of a shoe worn by a foot of an individual comprising the following steps: acquiring (S1) a thermal image of the shoe when it is worn by a foot of the individual by means of a thermal camera, determining (S2), from the thermal image of the shoe, a lower limit of the foot of the individual, determining (S3) a position of the shoe relative to the thermal camera at the time of acquisition of the thermal image, and deducing (S4) of the position of the shoe relative to the camera and of the lower limit of the foot, a distance between the lower face of the sole and the lower face of the foot of the individual.

Method for measuring a depth of a defect inside an inspection object is provided. The method comprises steps of: generating thermal image data corresponding to a temperature of a surface of the inspection object by photographing a heated surface of the inspection object at a predetermined time interval by a photographing device; obtaining a temperature curve showing a temporal change in temperature of the surface of the inspection object based on the thermal image data; fitting a theoretical equation obtained from a heat conduction equation including a parameter related to the depth of the defect of the inspection object to the temperature curve to obtain a theoretical curve showing a temporal change in temperature of the surface of the inspection object; and obtaining the depth of the defect of the inspection object based on a value of the parameter in the theoretical equation corresponding to the theoretical curve.

Examples of a method include maintaining a large area thin film at a predetermined angle with respect to a spatially non-scanning infrared (IR) radiation source. The large area thin film reflects infrared radiation and at least a portion of the large area thin film is electrically conductive. The predetermined angle is selected from an angle ranging from about 0 to about 45. Examples of the method include, while maintaining the large area thin film at the predetermined angle, directly illuminating the large area thin film with infrared radiation from the spatially non-scanning infrared radiation source, and thermal imaging reflected infrared radiation from the large area thin film by an infrared imaging system having an optical axis positioned at a fixed angle with respect to the large area thin film. The fixed angle is selected from an angle ranging from about 0 to about 45.

A method of diagnosing a pipe includes diagnosing, by a computer, a state of a pipe from an updated model based on change in temperature of the pipe calculated from the model in a case where the pipe is heated in the model obtained by modeling a heat transfer behavior of an inside of the pipe containing deposition by using an equivalent circuit and change in temperature of the pipe measured in a case where the pipe is heated.

A subsurface inspection method and system (1) for detecting internal defects (2) and/or overlay/misalignment in a semiconductor wafer (4). A measurement laser beam (6) is split into a laser probe beam (8) and a reference laser beam (10). The laser probe beam is transmitted to a wafer surface (12). A laser excitation pulse (14) is transmitted impinging the wafer surface for causing an ultrasound wave propagating through the wafer and causing wafer surface movement when reflected back from an encountered subsurface feature. The laser probe beam and the reference laser beam are recombined in an optical interference detector (18) and the subsurface feature inside the wafer is detected by a deviation of a detected phase difference. The laser probe beam and the reference laser beam are guided through an optic (20) prior to arriving at the optical interference detector. The optic has a dispersive characteristic dimensioned to enlarge the phase difference between the reference beam and the wave length shifted probe beam.

Fluid flow systems can include one or more resistance temperature detectors (RTDs) in contact with the fluid flowing through the system. One or more RTDs can be operated in a heating mode and a measurement mode. Thermal behavior of the one or more RTDs can be analyzed to characterize a level of deposit formed on the RTD(s) from the fluid flowing through the system. Characterizations of deposition on RTDs operated at different temperatures can be used to establish a temperature-dependent deposition profile. The deposition profile can be used to determine if depositions are likely to form at certain locations in the fluid flow system, such as at a use device. Detected deposit conditions can initiate one or more corrective actions that can be taken to prevent or minimize deposit formation before deposits negatively impact operation of the fluid flow system.

A method for coating a surface of a substrate may involve coating the surface of the substrate with a wet coating by way of a coating station, conveying the substrate by way of a conveying device, and detecting the surface coated with the wet coating by producing a thermal image of a detection region that comprises part of the surface. The thermal image may be recorded in a spectral range that includes a wavelength between 1 micrometer and 20 micrometers. Further, the detection region may be located directly downstream of the coating station, or the detection region may at least partially include the coating station.

A portable optic metrology thermal chamber module including a housing defining a thermal chamber, with a thermally isolated environment arranged for holding an optic device under test, the housing having an optic stimulus entry aperture configured for entry of a stimulus beam, from a metrology system stimulus source through the entry aperture onto an entry pupil of the device to an image analyzer, and a module mount coupling to modularly mount the portable optic metrology thermal chamber module to a support of a metrology system of the metrology system stimulus source so as to removably couple the portable optic metrology thermal chamber module as a unit to the support in a predetermined position relative to the metrology system stimulus source, and the housing is sized and shaped so that the portable optic metrology thermal chamber module is portable as a unit for moving to and removing from the predetermined position.

Methods and systems are described for determining layer thickness for layers in a multi-layer sample. Reference transmission spectral data may be determined for a first layer and a second layer. The first layer may comprise a first material associated with a first spectral band and the second layer may comprise a second material associated with a second spectral band. The first spectral band may at least partially overlap the second spectral band. The reference spectral data may be used to determine correction factors. Spectral data may be measured for the multi-layer sample. The correction factors may be used to correct the spectral data by removing the contribution of the second layer from spectral data associated with first layer.